Fujitsu Corporation

Fumihiko Ando

Akira Takashima

Hiroshi Onodera

Eiji Yoshida

Kazuo Teshirogi

Tadashi Uno

Mitsuru Sato

Takashi Suzuki

Takao Nishimura

Fumihiko Taniguchi

Yoshikazu Kumagaya

Kaname Ozawa

Kanako Imai

Mitsutaka Ikeda

Yuji Akashi

Yoshihiro Tsukidate

Hayato Okuda

Nobutaka Ito

Katsuhito Kikuma

Kazunari Kosakai

Kouhei Orikawa

In a stacked semiconductor device which has a plurality of semiconductor chips of desired sizes stacked as one package, a first semiconductor chip is mounted on a flexible printed wiring board provided with external connecting terminals. A printed circuit board is placed and mounted on the first semiconductor chip by flip-chip bonding. A second semiconductor chip is secured onto the printed circuit board. The second semiconductor chip is connected to the flexible printed wiring board by wire bonding. The first semiconductor chip is connected to the flexible printed wiring board by wire bonding via the printed circuit board.

Stacked semiconductor device and method of producing the same

A method of evaluating configuration of solder external terminals of a BGA-type tape-based semiconductor device mounted on a board such that the external terminals are joined to lands provided on the mounting board is provided. The method includes the step of obtaining geometric data related to opening of a tape substrate of the semiconductor device, solder balls to be placed at positions corresponding to the openings, and the lands of the mounting board and the step of deribing configuration of the solder external terminal based on the geometric date. The method further includes the step of calculating the volume of voids to be produced in the external terminals, so as to compensate for the geometric data related to the tape substrate.

Method, apparatus and computer readable medium for evaluating configuration of solder external terminals of a semiconductor device

A plurality of semiconductor devices can be mounted on a mounting board in a three-dimensional structure by stacking one on another with a simple structure. A semiconductor element is mounted on a first surface of an interposer. Electrode pads connected to the semiconductor element are arranged around the semiconductor element on the first surface of the interposer. Protruding electrodes are provided on the respective electrode pads. Through holes are formed in the interposer so as to extend from a second surface opposite to the first surface of the redistribution substrate to the respective electrode pads. The semiconductor element is encapsulated by a seal resin. Each of the protruding electrodes is higher than the sealed portion of the semiconductor element.

Semiconductor device having protruding electrodes higher than a sealed portion

External connection electrodes can be positively mounted on a substrate when the pitch between the external connection electrodes is reduced and the diameter of each through hole formed in the substrate is reduced. A semiconductor chip is mounted on a first surface of a tape substrate. Electrode films are formed on the first surface of the tape substrate, each of the electrode films electrically connected to the semiconductor chip. External connection electrodes are provided on a second surface of the tape substrate, each of the external connection electrodes connected to a respective one of the electrode films via a through hole formed in the tape substrate. The external connection electrodes are formed on the electrode films by plating. A diameter S,of a portion of each of the external connection electrodes protruding from the second surface of the tape substrate and a diameter S,of the through hole satisfy a relationship S,&lE;S

Semiconductor device having an external connection electrode extending through a through hole formed in a substrate

Growing community of inventors

Kawasaki, Japan

Fumihiko Ando