Kokusai Electric Co., Ltd.

Hitachi-kokusai Electric Inc.

Fumihide Ikeda

Yasuhiro Inokuchi

Norio Suzuki

Tohru Yoshida

Nobuo Mikoshiba

Makoto Ozawa

Tetsuaki Inada

Tomoji Watanabe

Junichi Murota

Ryoji Saito

Nobuyuki Mise

Toshikazu Karino

Masatoshi Takada

Yoshihiko Sakurai

Mamoru Sueyoshi

Yohsuke Inoue

Hisashi Nomura

Michiko Nishiwaki

Kazuhiro Shimeno

Junichi Machida

Shoichi Ono

Shoichiro Izumi

Masao Sakuraba

Toshiyuki Uchino

Toshiya Uenishi

Satoshi Kakizaki

Harushige Kurokawa

Mikio Koizumi

Masayuki Tomita

Emissivity of a substrate is measured at least before the substrate is heated, heating operation of the substrate is controlled under a heating condition corresponding to the emissivity, and the substrate is processed.

Substrate processing apparatus and semiconductor device producing method

A semiconductor wafer processing apparatus comprises a reaction furnace capable of heating inside thereof, a wafer mount for mounting a semiconductor wafer thereon and a transfer device. The wafermount includes an opening which is greater than the semiconductor wafer and which has a circle shape or a shape substantially similar to an outer periphery of the semiconductor wafer, and includes a wafer supporting portion projecting inwardly of the opening for supporting the semiconductor wafer. The transfer device is capable of holding the wafer mount outside the semiconductor wafer as viewed from a vertical direction, and transferring the wafer mount carrying the semiconductor wafer thereon substantially horizontally into and/or out from the reaction furnace.

Semiconductor wafer processing apparatus for transferring a wafer mount

A substrate processing apparatus comprises a heating member, a reaction tube body provided in the heating member and having a first gas introducing section and a gas exhausting section, a substrate holder disposed in the reaction tube body for horizontally holding a substrate within the reaction tube body between the first gas introducing section and the gas exhausting section, a gas heating tube provided in the heating member along the reaction tube body, and having a second gas introducing section and a gas discharging section which is in communication with the first gas introducing section of the reaction tube body, the gas heating tube being arranged such that a gas flowing in the gas heating tube first flows form the first gas introducing section side toward the gas exhausting section side, and then returns to flow from the gas exhausting section side toward the first gas introducing section side.

Substrate processing apparatus

A wet-oxidation apparatus comprises a reaction tube capable of accommodating a semiconductor wafer; a water vapor generating apparatus for generating water vapor; a gas supply passage for supplying gas into the reaction tube; a discharge passage; an inert gas supply unit for supplying an inert gas; a gas switching unit capable of switching between the water vapor from the water vapor generating unit and the inert gas from the inert gas supply unit, so as to supply either one of the water vapor and the inert gas to the gas supply passage; and a control unit controlling such that: at least while wet-oxidation processing of the semiconductor wafer are conducted predetermined times in the reaction tube, the water vapor generating apparatus continuously generates the water vapor; whenever the wet-oxidation processing is started one time, the water vapor from the water vapor generating apparatus is switched toward the gas supply passage; and whenever the wet-oxidation processing is completed one time, the water vapor from the water vapor generating apparatus is switched toward the discharge passage, and the inert gas from the inert gas supply unit is supplied to the gas supply passage.

Wet-oxidation apparatus and wet-oxidation method

A substrate processing apparatus comprises a hot-wall type processing chamber for processing a substrate, a heater capable of heating an interior of the processing chamber, a substrate holder capable of holding the substrate and processing the substrate in the processing chamber in a state where the substrate holder holds the substrate, and a mechanism, which is capable of allowing the substrate holder to hold the substrate and then transferring the substrate holder holding the substrate into the processing chamber, and/or which is capable of carrying out the substrate holder from the processing chamber in a state where the substrate holder holds the substrate, and then separating the substrate from the substrate holder.

Substrate processing apparatus and substrate processing method

Substrate processing apparatus having a gas heating tube

A substrate processing apparatus includes a reaction container for processing a substrate therein. The reaction container is provided with two open ends. The reaction container includes a central cylindrical body and two flanges respectively provided at the both open ends. The central cylindrical body includes at its both ends thin portion which are thinner than the central portion of the central cylindrical body, the flanges are respectively provided with flange connecting portions which are thinner than the central portion of the central cylindrical body, and the thin portions of the central cylindrical body and the flange connecting portions are welded together.

A substrate processing apparatus includes a substrate supporting pedestal having an upper substrate supporting pedestal and a lower substrate supporting pedestal which are vertically stacked, an upper resistance heater provided above the upper substrate supporting pedestal so as to be opposite to the upper substrate supporting pedestal, and a lower resistance heater provided under the lower substrate supporting pedestal so as to be opposite to the lower substrate supporting pedestal. Each of the upper substrate supporting pedestal and the lower substrate supporting pedestal is capable of mounting a substrate or substrates in a substantially horizontal position, and the lower substrate supporting pedestal including an opening which exposes the substrate in its entirety or openings which expose the substrates in their entireties as viewed from under the lower substrate supporting pedestal.

Heat treatment of semiconductor wafers where upper heater directly heats

A vapor deposition apparatus and method in which pulse waveform light is applied to a sample sealed in a reaction chamber. The sample is exposed to gaseous material while the pulse waveform light is applied creating one or plural atomic layers. Alternate layers of plural substances or alternate multiple layers of plural substances can be formed by alternating the introduction of gaseous materials with the application of pulse waveform light.

Vapor depositing method

In the semiconductor manufacturing apparatus according to the present invention, there are provided a cassette stocker for accommodating wafer cassettes loaded with wafers, a reaction furnace provided with heating means, a reaction gas introducing means for introducing reaction gas into the reaction furnace, a gas discharging means for discharging exhaust gas in the reaction furnace, a boat for supporting wafers, a buffer cassette stocker for storing unprocessed wafers, a boat elevating means for inserting the boat into and retrieving the boat from the reaction furnace, a wafer transfer means for transferring wafers between the boat and the wafer cassette accommodated on the cassette stocker, and a wafer cassette transfer means for transferring wafer cassettes between the buffer cassette stocker and the cassette stocker, and the buffer cassette stocker is enclosed to provide an antioxidation area to prevent natural oxidation of the wafers in standby status.

Semiconductor wafer reaction furnace with wafer transfer means

Growing community of inventors

Tokyo, Japan

Fumihide Ikeda