Sharp Kabushiki Kaisha Corporation

Fumie Kunimasa

Masanori Watanabe

Mitsuhiro Matsumoto

Ryuzo Yuki

Takeshi Ishida

Tadashi Takeoka

Provided is an illumination device for obtaining planar light having satisfactory uniformity and suppressed brightness irregularities. A backlight unit (illumination device) () comprises a light source and a light-guiding element () for guiding light from the light source. The light-guiding element () includes prisms () formed in an end area () on the light source side, and prisms () formed in an area (a light-emitting area ()) on the side opposite the light source relative to the end area (). The prisms () vary the propagation angle of light spreading in a direction intersecting the direction of light entry, more so than the prisms ().

Illumination device and display device

There is provided a semiconductor laser device capable of reducing stress occurring to a semiconductor laser element so that a life of the semiconductor laser device can be prolonged. In this semiconductor laser device, a solder layeris absent over a first region Rranging to a specified length Lin a perpendicular direction X from a center line Jof a light-emitting regiontoward both sides of the perpendicular direction X. That is, the first region Rover which the light-emitting regionis present serves as an incomplete bonding region between the solder layerof the semiconductor laser elementand a heat sink. Thus, stress given to the light-emitting regiondue to differences in coefficient of thermal expansion among the semiconductor laser element, the solder layerand the heat sinkduring operation is reduced.

Semiconductor laser device having incomplete bonding region and electronic equipment

A semiconductor laser improved in heat sinkability of portions in the vicinity of a light-emitting end face of a main body in order to prevent occurrence of COD is provided. A main bodyhaving a light-emitting end facefor emitting laser light is formed on a semiconductor substrate, n-type GaAs substrate. Thickness of a front end portionin the vicinity of the light-emitting end faceof a plated metal layerformed on the main bodyis larger than thickness of a central portionof the plated metal layerin a direction along a cavity.

Semiconductor laser

The present invention provides a semiconductor laser including a lower clad layer, an active layer including at least one quantum well layer, and an upper clad layer formed in this order above a semiconductor substrate, and having a window region including a portion in which the quantum well layer in the active layer and layers adjacent to the active layer are intermixed in the vicinity of a light emitting end face perpendicular to the surface of the semiconductor substrate, in which the lower clad layer has a refractive index higher than that of the upper clad layer, and the light intensity distribution in the window region spreads more widely in the direction perpendicular to the surface of the semiconductor substrate than the light intensity distribution in the gain region, and also provides a method for fabricating such a semiconductor laser.

Growing community of inventors

Tenri, Japan

Fumie Kunimasa