Nec Electronics Corporation

Renesas Electronics Corporation

Fumiaki Futamura

Satoshi Uchiya

Hiroyoshi Kudou

Junichi Yamamoto

Tetsuji Kimura

In a solid imaging device, a photoelectric converting section is configured to generate electric charges through photoelectric conversion, and a first charge transfer section is connected with the photoelectric converting section. A first read gate section is provided between the photoelectric converting section and the first charge transfer section, and is configured to transfer the electric charges from the photoelectric converting section to the first charge transfer section. A second charge transfer section operates independently from the first charge transfer section and configured to receive the electric charges transferred from the first charge transfer section.

Solid imaging device

A solid-state imaging device has: a photo-detection unit; a charge transfer unit transferring charges generated by the photo-detection unit in response to a first and a second clock generated by a clock supply circuit. The charge transfer unit includes: a first charge transfer element; a second charge transfer element adjacent to the first charge transfer element; and a charge transfer element group adjacent to the second charge transfer element and including a plurality of charge transfer elements. In a time period, the clock supply circuit supplies the first clock to the first charge transfer element, the second clock to the second charge transfer element, and constant potentials to respective the plurality of charge transfer elements.

Solid-state imaging device and method of operating solid-state imaging device

A solid-state imaging device includes an N-type semiconductor substrate, an N-type impurity region provided in the surficial portion of the N-type semiconductor substrate, a photo-electric conversion unit formed in the N-type impurity region, a charge accumulation unit formed in the N-type impurity region so as to contact with the photo-electric conversion unit, and temporarily accumulating charge generated in the photo-electric conversion unit, a charge hold region (barrier unit) formed in the N-type impurity region so as to contact with the charge accumulation unit, and allowing the charge accumulation unit to accumulate the charge, and a charge accumulating electrode provided to the charge accumulation unit. The charge accumulation unit and the charge hold region are formed to be N-type.

Solid-state imaging device and method of driving the same

A solid state image sensor is constructed such that a plurality of linear image sensors are provided to have at least one row of photodiodes in each of the plurality of linear image sensors and a photodiode array is formed by arranging the plurality of linear image sensors side by side. A control gate electrode used to retrieve electric charges and a polysilicon electrode serving as a charge transfer electrode are provided between the pluraliielding conductive film is provided on the polysilicon electrode to partition the plurality of linear image sensors into individual linear image sensors. Accordingly, a light beam incident on a certain linear image sensor can be prevented from entering another linear image sensor adjacent to the certain linear image sensor, thereby reducing a difference between the amounts of signal charges outputted from different linear image sensors and suppressing smear.

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Kanagawa, Japan

Fumiaki Futamura