Mitsubishi Gas Chemical Company, Inc.

Other

Tokyo Electron Limited

Mitsubishi Gas Chemical, Inc.

Fukusaburo Ishihara

Ryuji Sotoaka

Tetsuo Aoyama

Hideto Gotoh

Takuya Goto

Hiroshi Matsunaga

Kojiro Abe

Takayuki Niuya

Yoshiya Kimura

Hiroyuki Mori

Minoru Kakuda

Ryuji Hasemi

Hidetoshi Ikeda

Masayuki Kojima

Takuro Ishibashi

Tsuyoshi Matsui

Yoshikazu Ohira

Kazusato Hara

Takafumi Tokunaga

Kazuhisa Usuami

Shunji Sasabe

Emi Higashiizumi

Yoshimi Torii

Masumi Ogasawara

Kouzo Ishibashi

The cleaning agent described above comprises a surfactant and an organic solvent, and the cleaning method described above is characterized by allowing the cleaning agent described above to flow on the surface of the material to be treated at a high speed to thereby clean the above surface. According to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.

Cleaning agent and cleaning method

The bleaching compositions of discolored teeth comprise titanium dioxide initiating photocatalyst action with light irradiation, chemical compounds generating hydrogen peroxide in an aqueous solution and thickening agents. Further the bleaching methods of discolored teeth comprising applying the bleaching composition onto the surface area of the teeth and then initiating photocatalyst action by irradiating the applied surfaces area with light. Therefore, the present invention shows remarkable bleaching results due to easy application of the compositions onto discolored teeth and keeping the original activity of the photocatalyst without its deterioration.

Tooth bleaching compositions and methods of bleaching discolored tooth

The cleaning method described above is characterized by allowing a cleaning agent comprising an oxidizing agent, a chelating agent and fluorine compound to flow on a surface of a material to be treated at a high speed to thereby clean the above surface according to the present invention, deposits adhering firmly to a surface of a material to be treated can readily be removed without damaging the material to be treated.

Cleaning method using an oxidizing agent, chelating agent and fluorine compound

There is disclosed a cleaning liquid for producing a semiconductor device which comprises (A) fluorine-containing compound; (B) water-soluble or water-miscible organic solvent; and (C) inorganic acid and/or organic acid, optionally, further comprises (D) quaternary ammonium salt or (D') a specific organic carboxylic acid ammonium salt and/or an organic carboxylic acid amine salt; as well as a process for producing a semiconductor device by forming a resist pattern on a substrate equipped on the surface with an insulating film layer or a metallic electroconductive layer, forming a via hole or electric wiring by dry etching, removing the resist pattern by ashing treatment with oxygen plasma; and effecting an cleaning treatment with the above cleaning liquid. The above cleaning liquid and production process can readily remove the deposit polymer formed in the case of dry etching without impairing metallic film and insulating film.

Cleaning liquid for semiconductor devices

Growing community of inventors

Saitama, Japan

Fukusaburo Ishihara