Asahi Kasei Kabushiki Kaisha

Asahi Kasei E-materials Corporation

Fujito Yamaguchi

Jun Koike

Masatoshi Maeda

Ryuichi Ito

Naoki Inoue

Akira Ikeda

Makoto Okada

Yoshimichi Mitamura

Naoki Hosomi

Aya Takagiwa

Nao Shirokura

Shinji Arihisa

To provide microwell films for bioassay suitable for a 'unimolecular enzyme assay' method and methods of manufacturing the films, a microwell film for bioassay is comprised of at least a substrate (), and a resin layer () having microwells on its surface provided on one main surface of the substrate (), where in the substrate () and the resin forming the resin layer (), an absorption coefficient at each of wavelengths of 350 nm to 800 nm is 0.01 μmor less.

Microwell film for bioassay, photosensitive resin composition for formation of the microwell film for bioassay, and method of manufacturing the microwell film for bioassay

Provided is a transparent antenna comprising a transparent base material, an antenna part, and a joint part electrically bonded to the antenna part, the antenna part and the joint part being arranged on the transparent base material, wherein the joint part has a first conductive pattern and a first opening part without the first conductive pattern formed thereon, the antenna part has a second conductive pattern and a second opening part without the second conductive pattern formed thereon, surface free energy Eof the first conductive pattern is 60 mJ/mor less, and surface free energy Eof the transparent base material at the first opening part is larger than the surface free energy E.

Transparent antenna and RF tag

A function transfer product () is provided with a carrier () having a concavo-convex structure () of nanostructure, and a functional layer () provided on the concavo-convex structure (). The functional layer () is beforehand provided on the surface of the concavo-convex structure (), and is directly brought into contact with one main surface of a target object (), and then the carrier () is removed from the functional layer () to transfer the functional layer () to the target object (). An average pitch of the concavo-convex structure () ranges from 1 nm to 1500 nm, the functional layer () contains a resin, and a ratio (Ra/lor) between surface roughness (Ra) on the exposed surface side of the functional layer () and a distance between a top position of a convex-portion of the concavo-convex structure () and the exposed surface of the functional layer () is 1.2 or less. Further, the functional layer () is arranged inside concave portions (), and the exposed surface thereof is in a non-liquid state at a temperature of 20&#xb0; C. under light shielding. It is possible to add the function onto the target object () with high accuracy.

Function transfer product, functional layer transfer method, packed product, and function transfer film roll

A semiconductor light emitting apparatus comprised of a semiconductor light emitting device () having a layered semiconductor layer () configured by layering at least two or more semiconductor layers (), () and a light emitting layer () to emit first light, and a wavelength conversion member that covers at least apart of the semiconductor light emitting device (), absorbs at least a part of the first light and that emits second light with a wavelength different from that of the first light, characterized in that the semiconductor light emitting device () is provided with a fine structure layer, as a component, including dots comprised of a plurality of convex portions or concave portions extending in the out-of-plane direction on one of main surfaces forming the semiconductor light emitting device (), the fine structure layer forms a two-dimensional photonic crystal () controlled by at least one of a pitch among the dots, a dot diameter and a dot height, and that the two-dimensional photonic crystal () has at least two or more periods each of 1 &#x3bc;m or more.

Semiconductor light emitting apparatus

In an optical substrate (), a concave-convex structure () including a plurality of independent convex portions (to) and concave portions () provided between the convex portions (to) is provided in a surface. The average interval Pave between the adjacent convex portions (to) in the concave-convex structure () satisfies 50 nm&#x2266;Pave&#x2266;1500 nm, and the convex portion () having a convex portion height hn satisfying 0.6 h&#x2267;hn&#x2267;0 h for the average convex portion height Have is present with a probability Z satisfying 1/10000&#x2266;Z&#x2266;1/5. When the optical substrate () is used in a semiconductor light-emitting element, dislocations in a semiconductor layer are dispersed to reduce the dislocation density, and thus internal quantum efficiency IQE is improved, and a waveguide mode is removed by light scattering and thus the light the extraction efficiency LEE is increased, with the result that the efficiency of light emission of the semiconductor light-emitting element is enhanced.

Optical substrate, semiconductor light-emitting element and method of manufacturing semiconductor light-emitting element

To provide a substrate for optics for enabling the color shift caused by diffraction of light to be reduced, a substrate for optics () is provided with a fine-structure layer including dots () comprised of a plurality of convex portions or concave portions extending in the direction of from a main surface of a substrate to outside the surface, the fine-structure layer has a plurality of dot lines in which a plurality of dots is arranged with a pitch (Py) in the first direction inside the main surface of the substrate, while having a plurality of dot lines in which a plurality of dots is arranged with a pitch (Px) in the second direction orthogonal to the first direction inside the main surface of the substrate, and both of the pitch Py and the pitch Px are inconstant intervals and are of nano-order.

Substrate for optics and light emitting device

To provide a fine-structure layered product, and a preparation method of a fine-structure layered product using the fine-structure layered product for enabling a fine concavo-convex structure excellent in environmental resistance, weather resistance and long-term stability to be formed with a large area and high productivity, and provide a manufacturing method of a fine-structure product for enabling a large area to be made with high productivity, a fine-structure layered product of the invention is provided with a substrate, a resin layer that is formed on one main surface of the substrate and that has a fine concavo-convex structure on its surface, and an inorganic layer that is provided on the fine concavo-convex structure of the resin layer and that contains a sol-gel material having a fine concavo-convex structure in a shape associated with the fine concavo-convex structure of the resin layer, where a fluorine element concentration (Es) in a region on the inorganic layer side of the resin layer is higher than an average fluorine concentration (Eb) in the resin layer.

Fine-structure layered product, preparation method of the fine-structure layered product and manufacturing method of a fine-structure product

A light extraction product () for a semiconductor light emitting device is provided with a concavo-convex structure layer (), provided with a concavo-convex structure () on a surface thereof, having a first refractive index (n1) and a light extraction layer (), provided on the convex portion of the concavo-convex structure (), having a second refractive index (n2), where in a first light extraction layer () a distance Lcv between an average position Sh of tops of the convex-portions and a convex-portion upper interface average position Scv of the first light extraction layer () meets equation (1) 10 nm&#x2266;Lcv&#x2266;5000 nm, in the concavo-convex structure () a convex-portion average height H meets equation (2) 10 nm&#x2266;H&#x2266;5000 nm, an average pitch P meets equation (3) 50 nm&#x2266;P&#x2266;5000 nm, and the distance Lcv and the convex-portion average height H meet equation (4) 50 nm&#x2266;Lcv+H&#x2266;6000 nm. It is possible to improve light extraction efficiency from the semiconductor light emitting device using the light extraction product (), and further to enhance long-term reliability of the semiconductor light emitting device.

Light extraction product for semiconductor light emitting device and light emitting device

To provide a substrate for optics provided with a fine-structure product which improves luminous efficiency of an LED while improving internal quantum efficiency IQE by decreasing the number of dislocation defects in a semiconductor layer, a substrate for optics () is provided with a fine-structure layer () including dots comprised of a plurality of convex portions () extending in the direction of from the main surface of a substrate () to outside the surface, where the fine-structure layer () has a plurality of dot lines (-to-N) in which a plurality of dots is arranged with a pitch Py in the first direction in the main surface of the substrate (), while having the plurality of dot lines in which a plurality of dots is arranged with a pitch Px in the second direction orthogonal to the first direction in the main surface of the substrate (), one of the pitch Py and the pitch Px is a constant interval of nano-order, while the other one is an inconstant interval of nano-order, or both are inconstant intervals of nano-order.

Substrate for optics having a plurality of dot lines, semiconductor light emitting device. and exposure apparatus

Disclosed is a layered product for fine pattern formation and a method of manufacturing the layered product for fine pattern formation, capable of easily forming a fine pattern having a thin or no remaining film in order to form a fine pattern having a high aspect ratio on a processing object. The layered product for fine pattern formation (1) of the present invention used to form a fine pattern () in a processing object () using a first mask layer () includes: a mold () having a concavo-convex structure () on a surface; and a second mask layer () provided on the concavo-convex structure (), wherein in the second mask layer (), a distance (lcc) and a height (h) of the concavo-convex structure () satisfy Formula (1) 0&#x3c;lcc&#x3c;1.0 h, and a distance (lcv) and the height (h) satisfy Formula (2) 0&#x2266;lcv&#x2266;0.05 h.

Growing community of inventors

Tokyo, Japan

Fujito Yamaguchi