Shin-etsu Chemical Co., Ltd.

Matsushita Electric Industrial Co., Ltd.

Nippon Telegraph and Telephone Corporation

Matsushita Electric Co., Ltd.

Other

Panasonic Corporation

Fujio Yagihashi

Masaru Sasago

Hideo Nakagawa

Yoshitaka Hamada

Tsutomu Ogihara

Takeshi Asano

Motoaki Iwabuchi

Osamu Watanabe

Motoyuki Yamada

Toshinobu Ishihara

Yoshio Kawai

Katsuya Takemura

Akinobu Tanaka

Tomoyoshi Furihata

Akira Yamamoto

Satoshi Watanabe

Youichi Ohsawa

Minoru Takamizawa

Jun Watanabe

Takafumi Ueda

Masanao Kamei

Kazuyuki Matsumura

Yoshihumi Takeda

Kazumasa Maruyama

Tadahito Matsuda

Junji Shimada

Masaaki Yamaya

Mutsuo Nakashima

Kazumi Noda

Mitsuo Asai

Toshiharu Yano

Motohiko Hirai

Toru Nakanishi

Jiro Nakamura

Katsuyuki Oikawa

Yoshinobu Isono

Koji Kawashima

Takeshi Anaso

The invention provides a composition for forming a silicon-containing resist underlayer film comprising: (A) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (1) and one or more hydrolysable compound shown by the following general formula (2), and (B) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (3) and one or more hydrolysable silicon compound shown by the following general formula (4). There can be provided a composition for forming a resist underlayer film applicable not only to a resist pattern obtained in a negative development but also to a resist pattern obtained in a conventional positive development, and a patterning process using this compositionRRRSi(OR)&#x2003;&#x2003;(1)U(OR)(OR)&#x2003;&#x2003;(2)RRRSi(OR)&#x2003;&#x2003;(3)Si(OR)&#x2003;&#x2003;(4).

Composition for forming resist underlayer film and patterning process using the same

The present invention is a silicon-containing resist underlayer film-forming composition containing at least any one of a condensation product and a hydrolysis condensation product or both of a mixture comprising: one or more kinds of a compound (A) selected from the group consisting of an organic boron compound shown by the following general formula (1) and a condensation product thereof and one or more kinds of a silicon compound (B) shown by the following general formula (2). Thereby, there can be provided a resist underlayer film applicable not only to the resist pattern formed of a hydrophilic organic compound obtained by the negative development but also to the resist pattern formed of a hydrophobic compound obtained by the conventional positive development.RB(OH)(OR)&#x2003;&#x2003;(1)RRRSi(OR)&#x2003;&#x2003;(2)

Silicon-containing resist underlayer film-forming composition and patterning process

A high-temperature bonding composition comprising a silicon base polymer as a thermosetting binder is provided. The silicon base polymer is obtained from dehydrolytic condensation of a condensate precursor comprising a silane compound having at least one pair of silicon atoms tied by a crosslink composed of an aliphatic hydrocarbon, heterocyclic or aromatic hydrocarbon group, and having at least three hydroxyl and/or hydrolyzable groups. Those silicon atoms having a direct bond to the crosslink composed of the aliphatic hydrocarbon, heterocyclic or aromatic hydrocarbon group are present in a proportion of at least 90 mol % relative to all silicon atoms in the polymer.

High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device

A pair of substrates each having a bonding surface are joined together by interposing a bond layer precursor coating between the bonding surfaces of the substrates and heating the precursor coating to form a bond layer. Prior to the joining step, the substrate on the bonding surface is provided with a gas-permeable layer. Even when a material which will evolve a noticeable volume of gas upon heat curing is used as the precursor coating, substrates can be joined via a robust bond without the peeling problem by gas evolution.

Substrate joining method and 3-D semiconductor device

In the invention, a silica sol prepared by hydrolyzing and condensing a silane compound represented by the following formula: Si(OR)or RSi(OR)wherein Rs, R(s) and R(s) may be the same or different when a plurality of them are contained in the molecule and each independently represents a linear or branched Calkyl group in the presence of a hydrophilic basic catalyst and a hydrophobic basic catalyst is used for a conventional porous-film forming composition.

Method for forming insulating film with low dielectric constant

Provided are organic silicon oxide fine particles which can be formed into a porous film having a dielectric constant and mechanical strength expected as a high-performance porous insulating film and having excellent chemical stability, and a preparation method thereof. Described specifically, provided are an organic silicon oxide fine particle comprising a core containing at least an inorganic silicon oxide or an organic silicon oxide and a shell containing at least an organic silicon oxide and being formed around the core by using shell-forming hydrolyzable silane in the presence of a basic catalyst; wherein of silicon atoms constituting the core or the shell, a ratio (T/Q) of a number (T) of silicon atoms having at least one bond directly attached to a carbon atom to a number (Q) of silicon atoms having all of four bonds attached to an oxygen atom is greater in the shell than in the core; and wherein the shell-forming hydrolyzable silane comprise at least a hydrolyzable silane compound having two or more hydrolyzable-group-having silicon atoms bound to each other via a carbon chain or via a carbon chain containing one silicon atom between some carbon atoms.

Organic silicon oxide core-shell particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device

Provided is a positive resist material, particularly a chemically amplified positive resist material having higher sensitivity, higher resolution, a higher exposure latitude and better process adaptability than conventional positive resist materials, and providing a good pattern profile after exposure, particularly having lessened line edge roughness and exhibiting excellent etching resistance. These materials may contain, preferably an organic solvent and acid generator, more preferably a dissolution inhibitor or a basic compound and/or a surfactant. Provided is a positive resist material comprising a polymer comprising at least one monomer unit selected from a group consisting of a monomer unit (A), a monomer unit (B) and a monomer unit (C) represented by the following formula (1); and having a glass transition temperature (Tg) of 100&#xb0; C. or greater. 

Positive resist material and pattern formation method using the same

The present invention provides a zeolite sol which can be formed into a porous film that can be thinned to an intended thickness by a method used in the ordinary semiconductor process, that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that can be easily thinned; a composition for film formation; a porous film and a method for forming the same; and a high-performing and highly reliable semiconductor device which contains this porous film inside. More specifically, the zeolite sol is prepared by hydrolyzing and decomposing a silane compound expressed by a general formula: Si(OR)(wherein Rrepresents a straight-chain or branched alkyl group having 1 to 4 carbons, and when there is more than one R, the Rs can be independent and the same as or different from each other) in a conventional coating solution for forming a porous film in the presence of a structure-directing agent and a basic catalyst; and then by heating the silane compound at a temperature of 75&#xb0; C. or lower. A composition for forming a porous film which contains this zeolite sol is used.

Semiconductor device comprising porous film

The invention provides a coating solution for forming a porous film having excellent mechanical strength and dielectric properties and for easily forming a film with a freely controlled film thickness in an ordinarily employed method in semiconductor process. More specifically, provided are a method for preparing a porous-film-forming composition comprising steps of preparing polysiloxane, silica or zeolite particles (Component A), imparting crosslinkability to Component A, and temporarily terminating the crosslinkability; and a porous-film-forming composition obtainable in this method. In addition, provided is a method of forming a porous film comprising steps of preparing a porous-film-forming composition by preparing Component A, imparting crosslinkability to Component A and adding a crosslinkability inhibitor to temporarily terminate the crosslinkability; applying the porous-film-forming composition onto a substrate to form a film, drying the film, crosslinking the particles along with removing the crosslinkability inhibitor by heating the dried film.

Porous-film-forming composition, preparation method of the composition, porous film and semiconductor device

Provided are a film formation composition which can produce a film having high strength and low dielectric constant, a method for manufacturing the same, a method for forming a porous film, a porous film, and a semiconductor device containing the porous film internally. More specifically provided is a film formation composition, comprising a polymer which is obtainable by hydrolysis and condensation of one or more hydrolysable silane compounds in the presence of anionic ion exchange resin, wherein the hydrolysable silane compound is selected from the group consisting of Formulae (1) and (2):(R)Si(R)&#x2003;&#x2003;(1)(R)(R)Si&#x2014;R&#x2014;Si(R)(R)&#x2003;&#x2003;(2)wherein R, Rand Reach independently represents a monovalent hydrocarbon group which may have a substituent; R, Rand Reach independently represents a hydrolyzable group; Rrepresents a divalent organic group; a represents an integer of 0 to 3; and b and c each represents an integer of 1 or 2.

Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device

Provided are a composition for forming film which can form a porous film excelling in dielectric constant, adhesiveness, uniformity of the film, mechanical strength and having low hygroscopicity; a porous film and a method for forming the film; and a high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, comprising

According to the invention, the thin film having the thickness controlled desirably can be easily formed using common semiconductor processes. Provided is a coating liquid for forming the porous film having an excellent dielectric property and mechanical property. Specifically, the coating liquid for forming a porous film comprises the condensation product obtained by condensation of one or more silicate compounds represented by the formula (XO)(SiO)(HO)and one more organosilate compounds represented by the formula (XO)(RSiO)(HO). Thus, the porous insulating film having sufficient mechanical strength and dielectric properties for use in the semiconductor manufacturing process can be manufactured.

Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device

The present invention provides a composition for film formation which can form a porous film that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that is easily thinned; a porous film and a method for forming the same, and a high-performing and highly reliable semiconductor device which contains the porous film inside. More specifically, the composition for forming a porous film comprises a solution containing an amorphous polymer which is obtained by hydrolyzing and condensing at least one silane compound expressed by the general formula (R)Si(OR), and a zeolite sol which is formed by using a quaternary ammonium hydroxide. The method for forming a porous film comprises a coating step for coating the composition for forming a porous film; a subsequent drying step; and a porousness forming step.

It is an object of the present invention to provide a material for an antireflective film that has high etching selectivity with respect to the resist, that is, that has a faster etching speed than the resist, a pattern formation method for forming an antireflective film layer on a substrate using this antireflective film material, and a pattern formation method using this antireflective film as a hard mask for substrate processing. The present invention provides a silicone resin for preventing reflection comprising an organic group comprising a carbon-oxygen single bond and/or a carbon-oxygen double bond; a light-absorbing group; and a silicon atom whose terminal end or ends are Si&#x2014;OH and/or Si&#x2014;OR. It also provides an antireflective film material comprising this silicone resin (A) for preventing reflection film, an organic solvent (B) and an acid generator (C).

Antireflective film material, and antireflective film and pattern formation method using the same

Zeolite sol and method for preparing the same, composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device

Growing community of inventors

Niigata-ken, Japan

Fujio Yagihashi