Nec Corporation

Renesas Electronics Corporation

Sumitomo Light Metal Industries, Ltd.

Fujio Shimizu

Yoshinori Yoshida

Tsuyoshi Kachi

Junichi Fujita

Yoshio Sato

Jun-ichi Fujita

Harumi Mizunashi

Sueo Morishige

Shinji Matui

Yuji Matubara

Shigetoshi Takasu

A semiconductor device with an insulated-gate field-effect transistor and its manufacturing method. The cell region EFR defined in the first region of one main surface side of semiconductor substrate (SUB), an insulated gate-type field-effect transistor (MFET) is formed, the gate pad region GPR defined in the first region, snubber circuit SNC is formed snubber region SNR is defined. Within the first and second regions, first and second deep trenches spaced apart from each other are formed, and at least one width of the plurality of second deep trenches formed in the second region is smaller than that of the first deep trench formed in the first region.

Semiconductor device and method of manufacturing the same

A pattern formation method wherein a very small pattern composed of a desired element (atoms) is formed directly on a substrate by using atomic beam hologram technology. Quantum coherent reflection of an atomic wave is utilized. A coherent atomic beam is irradiated as a material wave, for example, upon a hologram of the transmission type to modulate the atomic beam with pattern information included in the hologram. The atomic beam having passed through and diffracted by the hologram is introduced to a reflecting plane so that the atomic beam may be quantum coherent reflected by the reflecting plane, and the atomic beam thus reflected is introduced into a substrate. A binary (two-value) hologram produced by computer synthesis is used suitably as the hologram. A hologram of the potential control type may be also used.

Pattern formation method and apparatus using atomic beam holography technology

A hologram is made up from a one-dimensional or two-dimensional slit array, each slit being formed with an electrode pair or electric wire for generating an electric field or magnetic field within the slit. These electric fields or magnetic fields are each set for each slit so as to confer upon an atomic beam passing through the slits a phase shift corresponding to the target hologram reproduced image, thereby allowing the target hologram image to be easily reproduced by directing the atomic beam perpendicular to the hologram surface. A two-dimensional reproduced image can be obtained by means of a one-dimensional slit array by shifting the reproduction substrate for each one-dimensional reproduced image obtained, or a three-dimensional pattern image can be reproduced by means of a two-dimensional slit array by successively changing the focal length and stacking on a preceding two-dimensional reproduced image the next two-dimensional reproduced image each time a two-dimensional reproduced image is obtained and repeating this procedure.

Atomic beam pattern forming method using atomic beam holography

Heat-radiating fin for a heat sink

Growing community of inventors

Tokyo, Japan

Fujio Shimizu