Renesas Technology Corp.

Other

Hitachi Ulsi Systems Co., Ltd.

Hitachi, Ltd.

Renesas Electronics Corporation

Renesas Eastern Japan Semiconductor, Inc.

Hitachi Hokkai Semiconductor Ltd.

Fujio Ito

Hiromichi Suzuki

Akihiko Kameoka

Kazunari Suzuki

Kunihiro Tsubosaki

Yoshinori Miyaki

Takafumi Nishita

Kunihiko Nishi

Noriaki Sakamoto

Hiroaki Tanaka

Junpei Kusukawa

Takafumi Konno

Shigeki Tanaka

Tokuji Toida

Hiromicti Suzuki

Toshio Sasaki

Yoshitaka Takezawa

Toshiaki Ishii

Yoshihiko Shimanuki

Ryozo Takeuchi

Takafumi Kikuchi

Hitoshi Matsumoto

Tomoo Matsuzawa

Fumio Murakami

Takuji Ide

Tomoru Sato

Toru Ishida

Takehisa Yokohama

Yoshikazu Tomita

Tetsuharu Urawa

Hiroyuki Takeno

Hiroshi Shimoji

Keiko Kurakawa

Masaru Yamada

Naoki Tsurukawa

A method for manufacturing a semiconductor device includes mounting a first chip over a first area of a chip mounting section of a lead frame and mounting a second chip over a second area of the chip mounting section, wherein the second area is adjacent to the first area via the slit. The chip mounting section is disposed on a flat heating jig. First pads of the first chip are connected with second pads of the second chip via first wires, respectively, and the first pads are connected with leads of the lead frame via second wires, respectively. the first chip, the second chip, the first wires and the second wires are sealed with a resin such that a part of each of the leads is exposed from the resin, and each of the leads is then separated from the lead frame.

Method of manufacturing a semiconductor device including plural semiconductor chips

Improvement in the reliability of a semiconductor device is aimed at. By heating a lead frame, after preparing a lead frame with a tape, until a resin molding is performed, at the temperature 160 to 300&#xb0; C. (preferably 180 to 300&#xb0; C.) for a total of more than 2 minutes in the atmosphere which has oxygen, crosslinkage density becoming high in resin of adhesives, a low molecular compound volatilizes and jumps out outside, therefore as a result, since a low molecular compound does not remain in resin of adhesives, the generation of copper migration can be prevented.

Manufacturing method of semiconductor device and manufacturing method of lead frame

The occurrence of a package crack in the back vicinity of a die pad is restrained by making the outward appearance of the die pad of a lead frame smaller than that of a semiconductor chip which is mounted on it, and also the occurrence of a package crack in the main surface vicinity of the semiconductor chip is restrained by forming a layer of organic material with good adhesion property with the resin that constitutes the package body on the final passivation film (final passivation film) that covers the top layer of conductive wirings of the semiconductor chip.

Method of manufacturing a semiconductor device

As a means for promoting the increase of the number of pins in a QFN (Quad Non-leaded package), a semiconductor die mounted on a die pad is arranged at the center of a plastic package, and a plurality of leads made of the same metal as the die pad and die pad supports are arranged around the die pad so as to surround the die pad. Lead tips on one side near the semiconductor die are electrically connected to bonding pads on a main surface of the semiconductor die via gold wires, and lead tips on the other side are ended at a side surface of the plastic package. In order to reduce the length between the semiconductor die and the leads, the lead tips on the one side are extended to positions close to the die pad, and the intervals between adjoining leads on the one side are smaller than those on the other side.

Semiconductor device and method of manufacturing the same

The present invention can supply power for each circuit section by separating and connecting bus-bar () for each circuit section inside the semiconductor chip (), and, in addition, can increase the number of pads () for power supply or can use the lead () conventionally used for power supply for signals by further making the best of the characteristics that enable the connection to bus-bar () irrespective of the inner lead () pitch, by making the pitch of the pad () smaller than the pitch of the inner lead (), or by forming the pad () in a zigzag arrangement.

Semiconductor device

A semiconductor device comprises a microcomputer chip, an SDRAM which is disposed alongside the microcomputer chip and is thinner than the microcomputer chip, a tub, a plurality of inner leads and outer leads, first wires that connect pads of the microcomputer chip and pads of the SDRAM, and second wires which connect the pads of the microcomputer chip and the inner leads and which are disposed so as to bridge over the SDRAM and are formed with loops at positions higher than loops of the first wires. An interface circuit for a memory bus is connected only between the chips, without connecting to external terminals, and is closed within a package. Therefore, pins can be utilized for other functions correspondingly and a multi-pin configuration can be achieved. Further, the cost of an SIP (semiconductor device) can be reduced owing to the adoption of a frame type.

Multi-chip semiconductor device package

A plurality of inner leads, a plurality of outer leads formed in one with each of the inner lead, a bar lead of the square ring shape arranged inside a plurality of inner leads, a corner part lead which has been arranged between the inner leads of the end portion of the inner lead groups which adjoin among four inner lead groups corresponding to each side of the bar lead, and was connected with the bar lead, and a tape member joined to the tip part of each inner lead, a bar lead, and a corner part lead are included. Since the corner part lead is formed as an object for reinforcement of a frame body between adjoining inner lead groups, the rigidity of the lead frame can be increased.

Lead frame and method of manufacturing the lead frame

A semiconductor device has an improved mounting reliability and has external terminals formed by exposing portions of leads from a back surface of a resin sealing member. End portions on one side of the leads are fixed to a back surface of a semiconductor chip, and portions of the leads positioned outside the semiconductor chip are connected with electrodes formed on the semiconductor chip through wires.

A method of manufacturing a thin, small-sized, inexpensive, non-leaded, resin-sealed type semiconductor device is disclosed. A flexible tape having plural terminals peelably through a first adhesive in a product forming portion formed on a main surface of the tape is provided, a semiconductor element is fixed to the main surface of the tape peelably through a second adhesive, electrodes formed on the semiconductor element and the terminals are connected together through conductive wires, an insulating resin layer is formed in an area including the semiconductor element and the wires on the main surface of the tape to cover the semiconductor element and the wires, and the tape on a back surface of the insulating resin layer is peeled, allowing the terminals to be exposed to the back surface of the insulating resin layer. Exposed surfaces of the terminals are each formed by a gold layer. The terminals each comprise a main metal layer of copper foil and one or plural auxiliary metal layers formed on each of a main surface and a back surface of the main metal layer. The auxiliary metal layer(s) on the main surface of the main metal layer is (are) formed using a material which affords a rough surface, thereby roughening the main surface side of each terminal.

Manufacturing method of a semiconductor device utilizing a flexible adhesive tape

A semiconductor device has an, improved mounting reliability and has external terminals formed by exposing portions of leads from a back surface of a resin sealing member. End portions on one side of the leads are fixed to a back surface of a semiconductor chip, and portions of the leads positioned outside the semiconductor chip are connected with electrodes formed on the semiconductor chip through wires.

The cost of a semiconductor device is to be reduced. An electrical connection between a first semiconductor chip and a second semiconductor chip stacked on the first semiconductor chip is made through an inner lead portion of a lead disposed at a position around the first semiconductor chip and two bonding wires.

Semiconductor device having stacked semiconductor chips sealed with a resin seal member

To provide a test technology capable of reducing a package size by reducing a number of terminals (pins) in a semiconductor integrated circuit of SIP or the like constituted by mounting a plurality of semiconductor chips to a single package, in SIPconstituted by mounting a plurality of semiconductor chips to a signal package of ASICSDRAMand the like, a circuit of testing SDRAM(SDRAMBIST) is provided at inside of ASICand SDRAMis tested from outside of SDRAMthat is, from ASICBy providing the test circuit of SDRAMat inside of ASICit is not necessary to extrude a terminal for testing SDRAMto outside of SIP

Semiconductor integrated circuit

Growing community of inventors

Hanno, Japan

Fujio Ito