Hitachi, Ltd.

Fujiaki Nose

Hiroshi Kikuchi

Norio Nakazato

Naotaka Tanaka

Takashi Suga

Satoru Isomura

Hiroyasu Sasaki

Satoshi Ueno

Hideko Ando

Takashi Kubo

Masanori Fukuhara

Yoichi Tamaki

Taiga Arai

Means for forming a package is disclosed on which is mounted a semiconductor chip with a high-speed LSI formed thereon, using a wire bonding method. The package comprises a semiconductor chip, a die pad smaller than a main surface of the semiconductor chip, a sealing member, plural leads each comprising an outer terminal portion and an inner lead portion, and plural bonding wires for connection between bonding pads formed on the semiconductor chip and the inner lead portions of the leads, each of the inner lead portions being bent in a direction away from a mounting surface of the sealing member, thereby approximating the height of the chip-side bonding pads and that of a bonding position of the inner lead portions to each other, whereby the wire length can be made shorter and it is possible to suppress an increase in inductance of the wire portions and attain impedance matching at various portion of a high-frequency signal input/output transmission path.

Semiconductor device and a method of manufacturing the same

A high-frequency signal from a tape-shaped line section having a surface layer signal lead and surface layer GND lead disposed on both sides thereof is directly inputted to a semiconductor chip via a signal surface layer wiring of a package substrate and through solder bump electrodes. Alternatively, a high-frequency signal from the semiconductor chip is outputted to the outside via the tape-shaped line section in reverse. Owing to the transmission of the high-frequency signal by only a microstrip line at the whole surface layer of the package substrate, the high-frequency signal can be transmitted by only the microstrip line at the surface layer without through vias or the like. Accordingly, the high-frequency signal can be transmitted without a loss in frequency characteristic, and a high-quality high-frequency signal can be transmitted with a reduction in loss at high-frequency transmission.

Semiconductor device and electronic device

A semiconductor device improved in reliability is disclosed. The semiconductor device comprises a semiconductor chip, a sealing member which seals the semiconductor chip with resin, a tub having a chip bonding surface for bonding with the chip and a back surface located on the side opposite to the chip bonding surface and exposed to a surface of the sealing member, plural inner leads electrically connected respectively to bonding pads on the semiconductor chip through wires such as gold wires, and plural outer leads integrally connected respectively to the inner leads and projecting to the exterior of the sealing member, wherein surfaces of the tub and the plural inner and outer leads are all coated with palladium plating. In the case where a heat radiation member is attached to the back surface of the tub, the palladium plating does not melt during solder reflow for example, so that the heat radiation member can be prevented from falling off and hence it is possible to improve the reliability of a QFP as the semiconductor device.

Semiconductor device

Growing community of inventors

Ome, Japan

Fujiaki Nose