Foshan Nationstar Optoelectronics Co., Ltd. Corporation

Fuhai Li

Zhiguo Xie

Libing Pan

Dongzi Chen

Penghui Dong

Quan Xie

Pingxia Liang

Man Zhao

Qinxiu Liu

Chengbin Liu

Ziheng Zeng

Light emitting diode lead-frame

Some embodiments of the disclosure provide an LED device, an LED lamp and a method for machining a conductive wire of an LED device. The Light-Emitting Diode (LED) device includes at least one LED chip, a bracket and at least one conductive wire. Each of the at least one conductive wire is of a three-dimensional structure and includes a vertical section, first stress cushioning section inclined obliquely upwards, second stress cushioning section inclined obliquely downwards and third stress cushioning section inclined obliquely downwards that are sequentially arranged. A first transition bending section, a second transition bending section and a third transition bending section are sequentially formed between the vertical section, the first stress cushioning section.

Light-emitting diode device, LED lamp and method for machining conductive wire of LED device

Provided are a Light Emitting Diode (LED) device and a backlight module. The LED device includes a substrate, a chip, an encapsulation structure and a top reflective shielding layer; the chip is disposed on the substrate; the encapsulation structure covers the substrate and covers the chip; and the top reflective shielding layer is disposed on the encapsulation structure and located at a central position of an upper surface of the encapsulation structure, and covers a part of the upper surface of the encapsulation structure.

Light emitting diode device and backlight module

Provided is a LED device and a backlight module. The LED device comprises a bracket, a LED chip and an encapsulation layer. A reflective cup is arranged on the bracket, and the LED chip is arranged in the reflective cup. The encapsulation layer encases and encapsulates the LED chip in the reflective cup, the encapsulation layer has a top surface of the encapsulation layer. The top surface of the encapsulation layer is located above a top surface of the reflective cup, and is a lens curved surface. In an on-state, the LED device has virtual cross sections passing through a geometrical center of the LED chip and perpendicular to a top surface of the bracket, in at least one of the virtual cross sections of the LED device, the LED device has luminous efficiency greater than or equal to 95% within a beam angle of at least 60&#xb0;.

LED device and backlight module

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Guangdong, China

Fuhai Li