Hunan Sanan Semiconductor Co., Ltd.

Fuchin Chang

Boting Liu

Shuai Chen

Yutao Fang

Nientze Yeh

An epitaxial structure for a high-electron-mobility transistor includes a substrate, a nucleation layer, a buffer layered unit, a channel layer, and a barrier layer sequentially stacked on one another in such order. The buffer layered unit includes a plurality of p-i-n heterojunction stacks. Each of the p-i-n heterojunction stacks includes p-type, i-type, and n-type layers which are made of materials respectively represented by chemical formulas of AlGaN, AlGaN, and AlGaN. For each of the p-i-n heterojunction stacks, x decreases and z increases along a direction away from the nucleation layer, and y is consistent and ranges from 0 to 0.7.

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Xiamen, China

Fuchin Chang