Freescale Semiconductor,inc.

Motorola Corporation

Fuaida Harun

Lan Chu Tan

Kong Bee Tiu

Kevin John Hess

Chu-Chung Lee

Cheng Choi Yong

Lau Teck Beng

Kok Wai Mui

Liang Jen Koh

Mohd Faizairi Bin Mohd Nor

Chiaw Mong Chan

Soo San Yong

An improved method of bonding an insulated wire () that has one end connected to a first bond pad () to a second bond pad () includes moving a tip of a capillary () holding the bond wire () over the surface of the second bond pad () such that the bond wire () is rubbed between the capillary tip () and the second bond pad (), which tears the bond wire insulation so that at least a portion of a metal core of the wire () contacts the second bond pad (). The wire () is then bonded to the second pad () using thermocompression bonding. The tip of the capillary () is roughened to enhance the tearing of the bond wire insulation.

Wirebonding insulated wire and capillary therefor

An integrated circuit is packaged using a package substrate that has a bottom side with a regular array of connection points and a top side with the integrated circuit on it. Vias in the package substrate provide electrical connection between the top and bottom sides. The vias have a via capture pad to which a wire may be wire bonded so that the wires from the IC to the substrate top side directly contact the vias at their capture pads without the need for traces from a top side bond pad to a via. The via capture pad is shaped to include at least one sharp edge to improve the ability of a wirebonder with pattern recognition software to locate the capture pad and place the wire.

Bonding pad for a packaged integrated circuit

An integrated circuit die () has a copper contact (), which, upon exposure to the ambient air, forms a native copper oxide. An organic material is applied to the copper contact which reacts with the native copper oxide to form an organic coating () on the copper contact in order to prevent further copper oxidation. In this manner, further processing at higher temperatures, such as those greater than 100 degrees Celsius, is not inhibited by excessive copper oxidation. For example, due to the organic coating, the high temperature of the wire bond process does not result in excessive oxidation which would prevent reliable wire bonding. Thus, the formation of the organic coating allows for a reliable and thermal resistance wire bond (). Alternatively, the organic coating can be formed over exposed copper at any time during the formation of the integrated circuit die to prevent or limit the formation of copper oxidation.

Integrated circuit die having a copper contact and method therefor

An electrical connection for connecting a bond pad of a first device and a bond pad of a second device with an insulated or coated wire. The electrical connection includes a first wirebond securing a first portion of the insulated bond wire to the first device bond pad. A second wirebond secures a second portion of the insulated bond wire to the second device bond pad. A bump is formed over the second wirebond, and the bump is offset from the second wirebond. The offset bump enhances the second bond, providing it with increased wire peel strength.

Wirebonding insulated wire

A method of preparing a semiconductor wafer having a integrated circuits formed on it that have pads formed of copper includes the steps of removing oxide from the copper pads and then the vacuum packing the wafer in a shock-proof container. The oxide may be removed from the copper pads in a number of ways. A first way includes cleaning the wafer in an alkaline solution, performing acid neutralization on the cleaned wafer, and then drying the wafer. A second way includes cleaning the wafer with an acid solution, rinsing the acid cleaned wafer with water, applying an anti-oxidant activator to the surface of the copper pads, rinsing the wafer with water after the application of the anti-oxidant activator, and then drying the water rinsed wafer. Yet a third way includes plasma cleaning the copper pads using a combination of about 5-10% Hydrogen and about 90-95% Argon and then sputtering a very thin layer of aluminum on a surface of the copper pads. The layer of aluminum has a thickness of about 1-5 nanometers.

Method of preparing copper metallization die for wirebonding

A wire bonding pad of a semiconductor integrated circuit device includes a first, test portion to which a probe tip may be contacted, and a second, wire bonding portion to which a wire is bonded for electrically connecting the bonding pad to a carrier or lead frame. Providing a separate, test portion prevents the wire bonding portion from being damaged by a probe tip during testing.

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Selangor, Malaysia

Fuaida Harun