Taiwan Semiconductor Manufacturing Comp. Ltd.

Visera Technologies Company Limited

Fu-Tien Weng

Chih-Kung Chang

Hung-Jen Hsu

Yu-Kung Hsiao

Bii-Junq Chang

Te-Fu Tseng

Chin Chen Kuo

Yi-Ming Dai

Jack Deng

Chin-Chen Kuo

Chung-Sheng Hsiung

Ming-Chang Kao

Sheng-Liang Pan

Yu-Kun Hsiao

Han-Lin Wu

Kuo-Liang Lu

Chieh-Yuan Cheng

Yi-Chuan Lo

Chih-Hsiung Lee

Kuang-Peng Lin

Bii-Cheng Chang

Chiu-Kung Chang

Yung-Shun Liao

Chin-Kung Chang

Chiung-Yuan Chang

Kuo-Lian Lu

A microlens structure is provided. The microlens structure includes a microlens element having a first refraction index. A first film is disposed on the microlens element, wherein the first film has a second refraction index less than the first refraction index. A second film is disposed on the first film, wherein the second film has a third refraction index less than the second refraction index and greater than a refraction index of air. Further, a fabrication method of the microlens structure is also provided.

Microlens structure and fabrication method thereof

An exemplary wafer level package comprises a semiconductor wafer with a plurality of semiconductor chips of perfect polygonal shapes thereon. A circuit-free area is defined over the semiconductor wafer to electrically isolate the semiconductor chips. A dam structure is substantially formed over the circuit-free area, wherein a portion of the dam structure formed around an edge of the semiconductor wafer is formed with a plurality via holes therein. A transparent substrate is formed over the semiconductor wafer, defining a plurality of cavities between the semiconductor chips and the transparent substrate, wherein the transparent substrate is supported by the dam structure.

Wafer level package and mask for fabricating the same

A method for fabricating a color filter structure includes: providing a base layer; forming a first colored layer on the base layer; patterning the first colored layer to form a pair of first colored patterns, a first opening between the first colored patterns, and a second opening adjacent to the first colored patterns; forming a first dielectric layer on the first colored patterns and the base layer exposed by the first and second openings; forming a second colored layer on the first colored patterns and the first dielectric layer; patterning the second colored layer to form a second colored pattern in the first opening; forming a second dielectric layer on the first dielectric layer and the second colored pattern; forming a third colored layer on the second dielectric layer; and patterning the third colored layer to form a third colored pattern in the second opening.

Color filter structure and method for fabricating the same

A method is provided for processing a substrate. The substrate has at least one filter region, a plurality of bond pads, and a plurality of scribe lines arranged around the filter region and bond pads. A first planarization layer is formed above the substrate. The planarization layer has a substantially flat top surface overlying the filter region, the bond pads and the scribe lines. At least one color resist layer is formed over the first planarization layer and within the filter region while the first planarization layer covers the bond pads and the scribe lines.

Image sensor

A microlens structure and a method of fabrication thereof are provided. The method comprises forming a layer of microlens material over a substrate, which has photo-sensitive elements formed therein. The microlens material, which comprises a photo-resist material, is exposed in accordance with a desired pattern a plurality of times. The energy used with each exposure process is less than the energy required if a single exposure is used. Furthermore, the masks used for each exposure may differ. In an embodiment, the masks are varied so as to create a notch in the upper corner of the microlens.

Microlens structure for image sensors

Image sensor fabrication method and structure

A method of manufacturing a microlens device by depositing a microlens material layer over a substrate that includes photo-sensors. The microlens material layer is then exposed and developed to define microlens material elements, including first microlens material elements and second microlens material elements. Each second microlens material element is substantially greater in thickness relative to each first microlens material element. The microlens material elements are then heated to form a microlens array that includes first microlens array elements, each corresponding to a first microlens material element, and second microlens array elements, each corresponding to a second microlens material element. Each first microlens array element has a substantially greater focal length relative to each second microlens array element. For example, each second microlens array element is substantially greater in thickness relative to each first microlens array element.

Microlens structure for improved CMOS image sensor sensitivity

An image sensor device and method for forming said device are described. The image sensor structure comprises a substrate with photodiodes, an interconnect structure formed on the substrate, a color filter layer above the interconnect structure, a first microlens array, an overcoat layer, and a second microlens array. A key feature is that a second microlens has a larger radius of curvature than a first microlens. Additionally, each first microlens and second microlens is a flat convex lens. Thus, a thicker second microlens with a short focal length is aligned above a thinner first microlens having a long focal length. A light column that includes a first microlens, a second microlens and a color filter region is formed above each photodiode. A second embodiment involves replacing a second microlens in each light column with a plurality of smaller second microlenses that focus light onto a first microlens.

Effective method to improve sub-micron color filter sensitivity

A method of manufacturing a plurality of microlenses on a substrate comprises forming a grid having raised ridges defining a plurality of openings on the substrate and forming a plurality of patterned photoresist features each disposed within one of the plurality of openings. The plurality of patterned photoresist features can then be reflowed inside the grid.

Advance ridge structure for microlens gapless approach

A new method is provided of treating the wafer prior to the process of singulating the wafer into individual die. A first surface of the wafer over which CMOS image sensor devices have been created is coated with a layer of material that is non-soluble in water. The wafer is attached to a tape by bringing a second surface of the wafer in contact with the tape. The wafer is singulated by approaching the first surface of the wafer and by sawing first through the layer of material that has been coated over the first surface of the wafer and by then sawing through the wafer, stopping at the surface of the tape. A thorough water rinse is applied to the surface of the singulated wafer, followed by a wafer clean applying specific chemicals for this purpose. The singulated die is now removed from the tape and further processed by applying steps of die mount, wire bonding, surrounding the die in a mold compound and marking the package.

Material to improve image sensor yield during wafer sawing

A method for processing a semiconductor substrate includes providing a substrate having at least one filter region with a plurality of bond pads in it. Metal is deposited above the bond pads, to reduce the bond pad step height. A planarization layer is formed such that the deposited metal has a height near to a height of the planarization layer. At least one color resist layer is formed above the planarization layer.

A color filter includes a substrate having a plurality of scribe lines arranged to form at least one filter region surrounded by the scribe lines. The scribe lines are at least partially filled with a resist material. At least one color resist layer is formed above the substrate within the at least one filter region.

Color filter with resist material in scribe lines

A method of fabricating microlens devices. The method includes filling the bond pad areas and scribe lines, or other areas, to improve the topography of the semiconductor wafer surface. A microlens material is applied to the surface after the bond pad areas and scribe lines have been filled. Because of the improved topography, the thickness of the microlens material is more uniform, thereby facilitating the formation of uniformly shaped microlenses.

Method for fabricating microlens with lithographic process

A process for reworking a non-reflowed, defective microlens element shape, of an image sensor device, without damage to an underlying spacer layer, or to underlying color filter elements, has been developed. The non-reflowed, microlens element shape, if defective and needing rework, is first subjected to a high energy exposure, converting the non-reflowed, microlens element shape to a acid type, microlens shape, then removed using a base type developer solution. Prior to formation of a reworked microlens element shape a baking cycle is employed to freeze, or render inactive, any organic residue still remaining on the surface of the spacer layer, after the base type developer removal procedure. Formation of the reworked, microlens element shape, followed by an anneal cycle, results in the desired rounded, microlens element, on the underlying spacer layer.

Rework procedure for the microlens element of a CMOS image sensor

Within a method for forming an image array optoelectronic microelectronic fabrication there is first provided a substrate. There is then formed at least in part over the substrate a bidirectional array of image array optoelectronic microelectronic pixel elements comprising a plurality of series of patterned color filter layers corresponding with a plurality of colors. Within the method, at least one series of patterned color filter layers within the plurality of series of patterned color filter layers corresponding with at least one color within the plurality of colors is formed employing a photolithographic method which employs a plurality of separate photoexposure steps for forming a plurality of separate sub-series of patterned color filter layers within the series of patterned color filter layers corresponding with the at least one color within the plurality of colors. By employing the plurality of separate photoexposure steps for forming the plurality of separate sub-series of patterned color filter layers within the series of patterned color filter layers corresponding with the at least one color within the plurality of colors, the image array optoelectronic microelectronic fabrication is formed with enhanced resolution.

Growing community of inventors

Hsin-Chu, Taiwan

Fu-Tien Weng