Asm IP Holding B.v.

Fu Tang

Qi Xie

Michael Eugene Givens

Jan Willem Maes

Peng-Fu Hsu

Suvi P Haukka

Petri Raisanen

Xiaoqiang Jiang

Delphine Longrie

Jacob Huffman Woodruff

Eric Jen Cheng Liu

Pauline Calka

Eric James Shero

Sung-Hoon Jung

YoungChol Byun

Peijun Chen

Gejian Zhao

Xingye Wang

A method for depositing an oxide film on a substrate by a cyclical deposition is disclosed. The method may include: depositing a metal oxide film over the substrate utilizing at least one deposition cycle of a first sub-cycle of the cyclical deposition process; and depositing a silicon oxide film directly on the metal oxide film utilizing at least one deposition cycle of a second sub-cycle of the cyclical deposition process. Semiconductor device structures including an oxide film deposited by the methods of the disclosure are also disclosed.

Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures

A method of forming a doped silicon nitride film on a surface of a substrate and structures including the doped silicon nitride film are disclosed. Exemplary methods include forming a layer comprising silicon nitride using a first thermal process and forming a layer comprising doped silicon nitride using a second thermal process to thereby form the doped silicon nitride film.

Methods and systems for forming doped silicon nitride films

Threshold voltage (Vt) tuning layers may be sensitive to etching by reactants used to deposit overlying gate material, such as metal nitride. Methods for depositing Vt tuning layers are provided. In some embodiments Vt tuning layers may comprise a Vt tuning material in a neutral matrix. In some embodiments, processes for reducing or eliminating the etching of Vt tuning layers by halide reactants are described. In some embodiments a Vt tuning layer, such as a metal oxide layer, is treated by a nitridation process following deposition and prior to subsequent deposition of a metal nitride capping layer. In some embodiments an etch-protective layer, such as a NbO layer, is deposited over a Vt tuning layer prior to deposition of an overlying metal nitride layer.

Formation of gate stacks comprising a threshold voltage tuning layer

Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures

Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70&#xb0; C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

A method for forming layers suitable for a V-NAND stack is disclosed. Specifically, the method may include multiple cycles for forming an oxide and a nitride in order to form an oxynitride layer.

Method of forming a germanium oxynitride film

In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.

Sulfur-containing thin films

In some embodiments, a semiconductor surface may be effectively passivated by nitridation, preferably using hydrazine, a hydrazine derivative, or a combination thereof. The surface may be the semiconductor surface of a transistor channel region. In some embodiments, native oxide is removed from the semiconductor surface and the surface is subsequently nitrided. In some other embodiments, a semiconductor surface oxide layer is formed at the semiconductor surface and the passivation is accomplished by forming a semiconductor oxynitride layer at the surface, with the nitridation contributing nitrogen to the surface oxide to form the oxynitride layer. The semiconductor oxide layer may be deposited by atomic layer deposition (ALD) and the nitridation may also be conducted as part of the ALD.

Methods for semiconductor passivation by nitridation after oxide removal

A system and a method for passivating a surface of a semiconductor. The method includes providing the surface of the semiconductor to a reaction chamber of a reactor, exposing the surface of the semiconductor to a gas-phase metal containing precursor in the reaction chamber and exposing the surface of the semiconductor to a gas-phase chalcogenide containing precursor. The methods also include passivating the surface of the semiconductor using the gas-phase metal containing precursor and the gas-phase chalcogenide containing precursor to form a passivated surface. The system for passivating a surface of a semiconductor may include a reactor, a metal containing precursor source fluidly coupled to the reactor, and a chalcogenide containing precursor source fluidly couple to the reactor, wherein the metal containing precursor source provides a gas-phase metal containing precursor to a reaction chamber of the reactor, and wherein the chalcogenide containing precursor source provides a gas-phase chalcogenide containing precursor to a reaction chamber of the reactor.

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Gilbert, AZ, United States of America

Fu Tang