Truelight Corporation

Fu-Hsing Hou

Yung-Sen Lin

Chih-Hao Chang

Kuo-Jen Chen

A common assembly structure of laser diode and PIN detector comprises a subassembly structure formed by connecting a laser diode to a submount made of low-capacitance material, and the sub-assembly structure is then implemented on a PIN detector. The so-called laser diode comprises a vertical cavity surface emitting laser (VCSEL) and an edge-emitting laser (EEL), wherein the EEL further comprises, for example, a Fabry-Perot Laser (F-P Laser) and a Distributed Feedback Bragg Laser. The common assembly structure of laser diode and PIN detector completely separates the anode and cathode of the semiconductor laser from the anode and cathode of the PIN detector thereby effectively reducing the parasitic capacitance effect derived from the PIN detector itself and the assembly structure, and is suitable for use in the high-speed laser driving circuits.

Growing community of inventors

Chiayi Hsien, Taiwan

Fu-Hsing Hou