Taiwan Semiconductor Manufacturing Comp. Ltd.

Lextar Electronics Corporation

Vanguard International Semiconductor Corporation

Fu-Hsin Chen

Yu-Chun Lee

Ruey-Hsin Liu

Tsung-Yi Huang

Tzong-Liang Tsai

Hung-Chun Tong

William Wei-Yuan Tien

Shin-Cheng Lin

Puo-Yu Chiang

You-Kuo Wu

Eric Huang

Chyi-Chyuan Huang

Hsin-Chih Lin

Yung-Hao Lin

Yu Wen Chen

Shun-Liang Hsu

Shiou-Yi Kuo

Jian-Chin Liang

Ting-Pang Li

Jui-Wen Lin

Chung-Yeh Wu

Yt Tsai

Kuo-Ting Lee

Chih-Hao Lin

Kun-Ming Huang

Yi-Chun Lin

Cheng-Ta Kuo

Chien-Nan Yeh

Chia-Ching Huang

An-Min Chiang

Yeh-Jen Huang

Chung-Yeh Lee

Hung-Chia Wang

Yi-Ting Tsai

Tzu-Yang Wu

Chia-Chun Hsieh

An-Ming Chiang

Wen-Wan Tai

Eugene Chu

Ming-Ren Tsai

Chang-Zhi Zhong

Chao-Wei Tseng

Chi-Wei Liu

Kiet Tuong Ly

Yu-Hui Huang

Wen-Shan Lee

Wen-Hua Huang

Yj Wang

Ying-De Chen

A display device includes a substrate, a plurality of white light-emitting units, and a color filter layer. The white light-emitting units are arranged on the substrate at intervals, and the white light-emitting units are chip scale package (CSP). The color filter layer is above the white light-emitting units. Each of the white light-emitting units includes a light-emitting diode chip and a wavelength conversion film. The wavelength conversion film directly covers a top surface and side surfaces of the light-emitting diode chip, and the wavelength conversion film converts light emitted by the light-emitting diode chip into white light.

Method of manufacturing display device

A pixel package is provided. The pixel package includes a flexible redistribution layer and a plurality of LED chips arranged on the surface of the flexible redistribution layer in a flip-chip manner. The pixel package also includes a plurality of light-adjusting layers respectively disposed on the LED chips. The pixel package further includes a plurality of flexible composite laminates disposed on the surface of the flexible redistribution layer and between the LED chips.

Pixel package, method for forming the same, and display device using the same

A light emitting device includes an LED die and a wavelength conversion layer. The LED die has a light emitting top surface and light emitting side surfaces. The wavelength conversion layer contains quantum dots and a photosensitive material, and is located on the light emitting top surface. A light emitting module including multiple light emitting devices is also disclosed.

Light emitting device and module

A picking apparatus is configured to pick up a plurality of micro elements. The picking apparatus includes an elastic plate, a substrate, a temperature-controlled adhesive layer, at least one heating element and a power source. The elastic plate has a first surface and a second surface opposite to each other. The substrate is disposed on the first surface. The temperature-controlled adhesive layer is disposed on the second surface and configured to adhere the micro elements. The heating element is disposed between the second surface and the temperature-controlled adhesive layer. The power source is electrically connected with the heating element. A viscosity of the temperature-controlled adhesive layer varies with a temperature of the temperature-controlled adhesive layer.

Picking apparatus with heating element and temperature-controlled adhesive and the method of using the same

Display device and manufacturing method thereof

A picking apparatus is configured to pick up a plurality of micro elements. The picking apparatus includes a main body and a plurality of picking portions. The picking portions connect with and protrude from the main body. Each of the picking portions has a first surface. The first surfaces are away from the main body and configured to pick up the micro elements. The main body has a second surface at least partially located between the picking portions. Each of the first surfaces has a first viscosity. The second surface has a second viscosity. The second viscosity is less than the first viscosity.

Picking apparatus capable of picking up target micro-elements

A light-emitting package structure includes a light transmissive adhesive layer, a substrate, and at least one light-emitting diode chip. The light transmissive adhesive layer includes a first surface and a second surface facing away from the first surface. The substrate is on the first surface of the light transmissive adhesive layer. The light-emitting diode chip is on the second surface of the light transmissive adhesive layer. The light transmissive adhesive layer has a first portion and a second portion on the second surface, the first portion surrounds the second portion, a vertical projection area of the second portion on the substrate at least entirely covers a vertical projection area of the light-emitting diode chip on the substrate, and a thickness of the second portion is smaller than or equal to a thickness of the first portion.

Light-emitting package structure

A low blue light backlight module configured to emit a white light is provided. The low blue light backlight module includes a first light-emitting element, a second light-emitting element, a third light-emitting element and a fourth light-emitting element. The first light-emitting element is configured to emit a first light having a peak emission wavelength of about 610-660 nm. The second light-emitting element is configured to emit a second light having a peak emission wavelength of about 520-550 nm. The third light-emitting element is configured to emit a third light having a peak emission wavelength of about 480-580 nm. The fourth light-emitting element is configured to emit a fourth light having a peak emission wavelength of about 445-470 nm. The white light has an emission spectrum, and an area ratio of the spectrum under wavelength of 415-455 nm to the spectrum under wavelength of 400-500 nm is below 50%.

Low blue light backlight module

A semiconductor device is provided. The semiconductor device includes a substrate having a first conductivity type. An epitaxial layer having the first conductivity type is disposed on the substrate, and a trench is formed in the epitaxial layer. A first well region having a second conductivity type that is different from the first conductivity type is disposed in the epitaxial layer and under the trench. A first gate electrode having the second conductivity type is disposed in the trench, and a second gate electrode is disposed in the trench on the first gate electrode, wherein the second gate electrode is separated from the first gate electrode by a first insulating layer. A method for forming the semiconductor device is also provided.

Semiconductor devices having stacked trench gate electrodes overlapping a well region

A semiconductor structure includes a substrate, a first III-V compound layer, a second III-V compound layer, a third III-V compound layer, and a fourth III-V compound layer. The top of the substrate includes a first region and a second region. The first III-V compound layer is in the first region. The second III-V compound layer is disposed over the first III-V compound layer. A first carrier channel is formed between the first III-V compound layer and the second III-V compound layer. The second III-V compound layer has a first thickness. The third III-V compound layer is in the second region. The fourth III-V compound layer is disposed over the third III-V compound layer. A second carrier channel is formed between the fourth III-V compound layer and the third III-V compound layer. The fourth III-V compound layer has a second thickness less than the first thickness.

Touch sensing circuits and methods for detecting touch events

A light emitting diode device includes a light emitting diode chip, a wavelength conversion layer including a bottom surface facing a top surface of the light emitting diode chip, and an interlayer having a first portion between the light emitting diode chip and a part of the bottom surface of the wavelength conversion layer, and a second portion extending from the first portion and connected between a remaining part of the bottom surface of the wavelength conversion layer and a side surface of the light emitting diode chip. The second portion has a side surface including a linear surface substantially aligning with a side surface of the wavelength conversion layer, and a curved surface having a first end connected to the linear surface and a second end connected to the side surface of the light emitting diode chip. The linear surface and the curved surface define a chamfer angle.

Light emitting diode device and manufacturing method thereof

Semiconductor device combining passive components with HEMT

A display device includes a driving substrate, multiple light-emitting elements, first and second transparent substrates, multiple pixels, and a patterned light-absorbing layer. The light-emitting elements are disposed on the driving substrate and used to emit a light. The first transparent substrate is disposed over the driving substrate and the light-emitting elements and includes at least one groove. The pixels are disposed in the groove and include a first sub-pixel, a second sub-pixel, and a third sub-pixel respectively aligned with one of the light-emitting elements. The second transparent substrate covers the first transparent substrate and the pixels. The patterned light-absorbing layer is disposed on the second transparent substrate and includes multiple first openings respectively aligned with the first, second, and third sub-pixels. The first, second, and third sub-pixels correspond to the light emitted by the light-emitting elements to respectively emit a red light, a green light, and a blue light.

Display device having multiple pixels in a substrate groove

A high-voltage semiconductor device including a semiconductor layer formed on a substrate is provided. A first well region having a first conductivity type and a second well region having a second conductivity type are formed in the semiconductor layer. Source and drain regions are respectively formed in the first and second well regions. A gate structure is disposed on the semiconductor layer. A first isolation trench structure is disposed in the semiconductor layer and surrounds the first and second well regions. The first isolation trench structure includes a first polysilicon layer filling a first trench and having the second conductivity type, a first heavy doping region formed in an upper portion of the first polysilicon layer and having the second conductivity type, and a first insulating liner disposed on sidewalls of the first trench and surrounding the first polysilicon layer.

High-voltage LDMOSFET devices having polysilicon trench-type guard rings

A high hole mobility transistor includes a substrate, a back-barrier layer, a conducting layer, a doping layer, a gate electrode, source/drain electrodes, and a band adjustment layer. The back-barrier layer is disposed on the substrate. The conducting layer is disposed on the back-barrier layer. A channel region is disposed in the conducting layer and is adjacent to the interface between the conducting layer and the back-barrier layer. The doping layer is disposed on the conducting layer. The gate electrode is disposed on the doping layer. The source/drain electrodes are disposed on opposite sides of the gate electrode. The band adjustment layer is disposed on the doping layer and electrically connected to the gate electrode. The band adjustment layer is an N-type doped III-V semiconductor.

High hole mobility transistor

Growing community of inventors

Jhudong, Taiwan

Fu-Hsin Chen