Vanguard International Semiconductor Corporation

Fu-Chun Tseng

Shao-Chang Huang

Jui-Chun Chang

Yeh-Ning Jou

Kai-Chieh Hsu

Chien-Hsien Song

Hsiao-Ying Yang

Chun-Chih Chen

Li-Fan Chen

Ching-Ho Li

Ting-You Lin

Gong-Kai Lin

Yi-Ching Chung

Yu-Ping Ho

Chien-Chi Hsu

A semiconductor device is provided. The semiconductor device includes a substrate, a first well, a second well, an isolation structure, a first field plate, a gate structure, a drain structure, and a source structure. The first well and the second well adjoin each other. The first well and the second well are disposed in the substrate. The isolation structure is disposed on the first well. The first field plate is disposed on the isolation structure. The gate structure crosses the first well and the second well, and an opening is defined between the first field plate and the gate structure to expose an edge of the isolation structure adjacent to the gate structure. The drain structure is disposed in the first well. The source structure is disposed in the second well.

Semiconductor device

A semiconductor device includes a semiconductor substrate, a Schottky layer, a plurality of first doped regions, a plurality of second doped regions, a first conductive layer and a second conductive layer. The semiconductor substrate includes a first conductive type, and the Schottky layer is disposed on the semiconductor substrate. The first doped regions and the second doped regions include a second conductive type, and which are disposed within the semiconductor substrate. The first doped regions are in parallel and extended along a first direction, and the second doped regions are in parallel and extended along a second direction to cross the first doped regions, thereby to define a plurality of grid areas. The first conductive layer is disposed on the Schottky layer, and the second conductive layer is disposed under the semiconductor substrate.

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Taipei, Taiwan

Fu-Chun Tseng