United Microelectronics Corp.

Fu-Chun Chien

Chih-Chung Wang

Nien-Chung Li

Li-Che Chen

Te-Yuan Wu

Ching-Wei Teng

Kuan-Wen Lu

Chih-Chun Pu

Yu-Ting Yeh

A method for fabricating a high voltage semiconductor device is provided. Firstly, a substrate is provided, wherein the substrate has a first active zone and a second active zone. Then, a first ion implantation process is performed to dope the substrate by a first mask layer, thereby forming a first-polarity doped region at the two ends of the first active zone and a periphery of the second active zone. After the first mask layer is removed, a second ion implantation process is performed to dope the substrate by a second mask layer, thereby forming a second-polarity doped region at the two ends of the second active zone and a periphery of the first active zone. After the second mask layer is removed, a first gate conductor structure and a second gate conductor structure are formed over the middle segments of the first active zone and the second active zone, respectively.

High voltage semiconductor device and fabricating method thereof

Growing community of inventors

Hsinchu County, Taiwan

Fu-Chun Chien