Koninklijke Philips Corporation N.v.

Frnak W Rohlfing

Nigel David Young

John R A Ayres

Stanley D Brotherton

Carole A Fisher

A method of fabricating an electronic device comprising a thin-film transistor, which addresses a problem of increased off-state current and reduced carrier mobility in self-aligned thin-film transistors. According to the method, a gate layer ( ) is etched back underneath a mask layer ( ). Following an implantation step using the mask layer as an implantation mask, the etch-back exposes implant damage which is then annealed by an energy beam ( ).

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Reigate, United Kingdom

Frnak W Rohlfing