Nxp B.v.

Taiwan Semiconductor Manufacturing Comp. Ltd.

Friso Jedema

Jan Rene Brands

Piotr Polak

Jan Hoogerbrugge

Willem Frederik Adrianus Besling

Freddy Roozeboom

Kim Phan Le

Klaus Reimann

Olaf Wunnicke

Casper Van Der Avoort

David Van Steenwinckel

Jaap Ruigrok

Romano Hoofman

Freek Egbert Van Straten

Hilco Suy

Aarnoud Laurens Roest

Hans M B Boeve

Stephan Heil

Yukiko Furukawa

Timotheus Arthur Van Roermund

René Wilhelmus Johannes Maria Van Den Boomen

Timotheus Van Roermund

Filip Frederix

Markus Petrus Josephus Tiggelman

Jan Brands

Michael Antoine Armand In't Zandt

There is disclosed a method for facilitating transactions carried out by a mobile device, wherein: the mobile device executes a smart card application; the smart card application receives a cryptographic algorithm from a transaction server external to the mobile device; the smart card application further receives transaction data from said transaction server; the cryptographic algorithm encrypts said transaction data and stores the encrypted transaction data in a storage unit of the mobile device. Furthermore, a corresponding computer program product and a corresponding mobile device for carrying out transactions are disclosed.

Method for facilitating transactions, computer program product and mobile device

Aspects of the present disclosure relate to phase-change materials. In accordance with an example embodiment, a phase-change material has a crystalline structure that manifests changes that increase as a function of time. For example, such changes may be implemented for monitoring the time that a perishable item has been exposed to an environment having a temperature that is greater than a threshold temperature. Based on the changes, a characterization is provided, indicative of the exposure of the phase-change material to the environment having the temperature that is greater than the threshold temperature.

Temperature monitoring

A method for providing an integrated circuit such that first and second sensing electrodes respectively have at their surfaces first and second receptor molecules for selectively binding to first and second analytes of interest; exposing the integrated circuit to a sample potentially comprising at least one of the first and second analytes, providing a first bead having a first electrical signature attached to a first molecule having a conformation/affinity for binding to the first sensing electrode dependent on the presence of the first analyte; providing a second bead having a second electrical signature attached to a second molecule having a conformation/affinity for binding to the second sensing electrode dependent on the presence of the second analyte; and determining the presence of the electrical signature of the first and/or second bead(s) on the first and second sensing electrodes respectively. An IC for implementing this method.

Analyte detection method and analyte detection integrated circuit

A time manager controls one or more timing functions on a circuit. The time manager includes a data storage and a time calculator. The data storage device stores a first indication of a performance characteristic of a memory cell at a first time. The data storage device also stores a second indication of the performance characteristic of the memory cell at a second time. The time calculator is coupled to the data storage device. The time calculator calculates a time duration between the first time and the second time based on a change in the performance characteristic of the memory cell from the first indication to the second indication.

Time management using time-dependent changes to memory

A method and apparatus for measuring the rate of flow of an ion-containing fluid in a channel are disclosed herein. The apparatus includes a captive sensor operable to detect changes in capacitance value due to the deflection of the ions in the fluid by a magnetic field, and a processor operable to determine a flow speed of fluid from the detected change in capacitance value and a predetermined value of magnetic field strength. Such apparatus may be implemented using CMOS technology. The apparatus may operate in a magnetic field generated by a permanent magnet and measure the flow reliably.

Flow sensor

A battery comprises a carrier foil, with solid state battery elements spaced along the foil and mounted on opposite sides of the foil in pairs, with the battery elements of a pair mounted at the same position along the foil. The carrier foil is folded to define a meander pattern with battery element pairs that are adjacent each other along the foil arranged back to back.

Battery

A method of performing a measurement with a sensor having a sensing surface and at least one capture molecule attached to the sensing surface for forming a binding pair with an analyte of interest, the binding pair having a flexible spatial orientation, the method comprising capturing the analyte of interest with the capture molecule, thereby forming the binding pair in an initial spatial orientation; applying a first electromagnetic force to the sensing surface to alter the spatial orientation of the binding pair; and performing a sensor measurement with the binding pair in the altered spatial orientation. A sensor apparatus implementing this method is also disclosed.

Sensor measuring method and sensing apparatus

The invention relates to electronic device having an operation temperature range, wherein the electronic device comprises a tunable capacitor (CST) comprising a first electrode (BE), a second electrode (TE), and a dielectric (FEL) arranged between the first electrode (BE) and the second electrode (TE). The dielectric (FEL) comprises dielectric material (FEL) having a value of a relative dielectric constant (&#x2208;) varying at least within the operation temperature range. The electronic device further comprises a temperature varying means (RES) being thermally coupled to the tunable capacitor for providing a temperature of the dielectric (FEL) causing a predetermined capacitance of the tunable capacitor (CST). The invention, which relies on the idea of varying temperature to vary a capacitance of a capacitor stack, provides an alternative tunable capacitor type for the known types. Advantageous embodiments feature high-tuning ratio, small device area, and stable capacitance value in case the temperature is well controlled. The invention further relates to a semiconductor device comprising the electronic device in accordance with the invention, to an electronic circuit comprising such electronic device, and to a method of manufacturing such electronic device.

Tunable capacitor

An electronic component () comprising a matrix () and a plurality of islands () embedded in the matrix () and comprising a material which is convertible between at least two states characterized by different electrical properties, wherein the plurality of islands () form a continuous path () in the matrix ().

Electronic component, and a method of manufacturing an electronic component

Provided is an electronic component that includes a first bi-layer stack including a first silicon oxide layer and a first silicon nitride layer, a second bi-layer stack including a second silicon oxide layer and a second silicon nitride layer, and a convertible structure which is convertible between at least two states having different electrical properties, where the convertible structure is arranged between the first bi-layer stack and the second bi-layer stack.

The invention relates to a Magnetic memory system () which comprises an information layer () and a sensor () for cooperating with the information layer (). The information layer () comprises a pattern of magnetic bits () which constitutes an array of bit locations. A bit magnetic field () at a bit location represents a logical value (LO, L, L). The sensor () comprises a magnetoresistive element () comprising a fixed magnetic layer () and a free magnetic layer (). The free magnetic layer () has a magnetization axis () along which the free magnetic layer retains a free magnetization direction (Ib,Ic,). A first bit magnetic field () at one of the bit locations represents a first logical value (LO, L, L) by providing a first resistance value (Rmax, Rmid, Rmin) in the magnetoresistive element () due to the free magnetization direction (Ic,Ib,) being substantially parallel to the magnetization axis (). A second bit magnetic field () at one of the bit locations represents a second logical value (LO, L, L) by providing a second resistance value (Rmax, Rmid, Rmin) in the magnetoresistive element () due to the free magnetization direction (Ha,Id,Id) having an angle () with the magnetization axis (). The second bit magnetic field () which provides the second resistance value (Rmax, Rmid, Rmin) is not one of the two stable magnetization directions of the free magnetic layer () and thus is different from the first resistance value (Rmax, Rmid, Rmin). The magnetization direction of the free magnetic layer () of the sensor () no longer needs to be set before read-out.

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Eindhoven, Netherlands

Friso Jedema