Wacker-chemitronic Gesellschaft Fur Elektronik-grundstoffe Mbh

Wacker Siltronic Gesellschaft Fur Halbeitermaterialien Ag

Friedrich Nemetz

Franz Kohl

Franz Kuhn-Kuhnenfeld

Gerhard Zechmeister

An apparatus and a method are provided for producing a silicon single crystal in an inert-gas flushed pulling chamber by pulling the single crystal from a melt by the Czochralski method. The method includes a) providing in the pulling chamber a first inner chamber and a second inner chamber, each of which is delineated by side, top and bottom boundaries; b) passing a first inert gas stream through the top boundary of the first inner chamber into the first inner chamber, which contains a heat shield, which is disposed around the single crystal, and a crucible containing the melt, and c) passing a second inert gas stream through the bottom boundary of the second inner chamber into the second inner chamber, which contains a heating device for heating the crucible, with the proviso that the first inert gas stream and the second inert gas stream are only able to mix, at the earliest, after leaving the inner chambers.

Method and apparatus for producing a single crystal

In the crucible-pulling of crystalline rods by the Czochralski technique, pulling plants that operate with a radiation screen offer a number of advantages. This process is optimized according to the invention by the use of a radiation screen which is joined to a lifting and pivoting mechanism that can be operated throughout the entire pulling process, and which is brought into position above the melt only when the contents of the crucible have been melted.

Growing community of inventors

Mauerkirchen, Austria

Friedrich Nemetz