Infineon Technologies Ag

Infineon Technologies Austria Ag

Technische Universitaet Graz

Friedrich Kroener

Carsten Von Koblinski

Francisco Javier Santos Rodriguez

Ingo Muri

Oliver Hellmund

Hans-Joachim Schulze

Werner Schustereder

Daniel Kraft

Johannes Hacker

Anton Mauder

Peter Irsigler

Manfred Schneegans

Michael Roesner

Martin Mischitz

Markus Heinrici

Harald Christian Koffler

Caterina Travan

Zeljka Kroener

According to various embodiments, a method for processing a substrate may include: processing a plurality of device regions in a substrate separated from each other by dicing regions, each device region including at least one electronic component; wherein processing each device region of the plurality of device regions includes: forming a recess into the substrate in the device region, wherein the recess is defined by recess sidewalls of the substrate, wherein the recess sidewalls are arranged in the device region; forming a contact pad in the recess to electrically connect the at least one electronic component, wherein the contact pad has a greater porosity than the recess sidewalls; and singulating the plurality of device regions from each other by dicing the substrate in the dicing region.

Method of processing a porous conductive structure in connection to an electronic component on a substrate

A wafer contacting device may include: a receiving region configured to receive a wafer; and an elastically deformable carrier disposed in the receiving region and including an electrically conductive surface region.

Wafer contacting device, and arrangement and method for electrochemical etching of a wafer

A method for fabricating a heat sink including providing a carbon metal composite having a plurality of metal-coated carbon fibers and a plurality of openings, the openings leading from a first side of the carbon metal composite to a second side of the carbon metal composite, disposing the carbon metal composite over a semiconductor element such that the first side of the carbon metal composite faces the semiconductor element, and bonding the carbon metal composite to the semiconductor element by means of an electroplating process, wherein a metal electrolyte is supplied to an interface between the carbon metal composite and the semiconductor element via the plurality of openings.

Method for fabricating a heat sink, and heat sink

A method of treating an acid effluent including phosphoric acid in accordance with various embodiments may include: providing an acid effluent including phosphoric acid; adding a base and silicon particles from a further effluent to the acid effluent including phosphoric acid so that a mixture is obtained and a solid content is formed; separating from the mixture a solid content including silicon and a salt resulting from a reaction of the base with the acid, so that a clarified effluent can be rejected in the environment and a filter press cake can be obtained and further used as additive for concrete.

Method of treating an acid effluent containing phosphoric acid

A method of removing particulate silicon from an effluent water in accordance with various embodiments may include: adding a base to the effluent water, an amount of the added base being sub-stoichiometric with regard to a basic oxidation reaction of an entire amount of silicon contained in the effluent water to ortho-silicic acid or ortho-silicate ions; maintaining a resulting mixture of the effluent water and the base in a predetermined temperature range for a period of time, so that a sediment including silicon is formed; and separating the sediment and the effluent water from each other.

Method of removing particulate silicon from an effluent water

In various embodiments, a gamma ray detector is provided. The gamma ray detector may include a converter element, configured to release an electron when a gamma ray moves at least partially through the converter element. The gamma ray detector may further include a semiconductor detector, arranged to receive the electron and configured to produce a signal when the electron moves at least partially through the semiconductor detector; and an amplifier circuit, coupled to the semiconductor detector and configured to amplify the signal produced by the semiconductor detector. In the gamma ray detector, the converter element may be arranged to at least partially shield the amplifier circuit from electromagnetic radiation.

Gamma ray detector and method of detecting gamma rays

A method of forming a composite material is provided. The method may include: arranging a suspension in physical contact with a carrier, wherein the suspension may comprise an electrolyte and a plurality of particles of a first component of the composite material; causing the particles of the first component of the composite material to sediment on the carrier, wherein a plurality of spaces may be formed between the sedimented particles; and forming by electroplating a second component of the composite material from the electrolyte in at least a fraction of the plurality of spaces.

Method of forming a composite material and apparatus for forming a composite material

A method for producing a semiconductor is disclosed, the method having: providing a semiconductor body having a first side and a second side; forming an n-doped zone in the semiconductor body by a first implantation into the semiconductor body via the first side to a first depth location of the semiconductor body; and forming a p-doped zone in the semiconductor body by a second implantation into the semiconductor body via the second side to a second depth location of the semiconductor body, a pn-junction forming between said n-doped zone and said p-doped zone in the semiconductor body.

Method for producing a semiconductor

A device and a method for temporarily closing a switch are disclosed. In an embodiment the device includes a first switch configured to be coupled to a load and a control circuit configured to temporarily close the first switch in response to a detection of a failure event in the first switch.

Failure detection for switch devices

A preform structure for soldering a semiconductor chip arrangement includes a carbon fiber composite sheet and a solder layer formed over the carbon fiber composite sheet.

Preform structure for soldering a semiconductor chip arrangement, a method for forming a preform structure for a semiconductor chip arrangement, and a method for soldering a semiconductor chip arrangement

A sensor device according to an embodiment includes a semiconductor substrate including a plurality of channels, the channels connecting a cavity and a measurement electrode, and a counter electrode arranged to be in contact with the cavity, wherein the cavity, the measurement electrode and the counter electrode are arranged to accommodate a drop of a liquid and to allow a voltage to be applied to the drop of liquid.

Sensor device, a method and a sensor to determine a relative concentration of a first kind of ions with respect to a second kind of ions solute in a drop of liquid

An electronic component includes a semiconductor substrate defined by a generally planar first face, a generally planar second face and side faces extending between the generally planar second face and the generally planar first face. The semiconductor substrate has a curved contour between the generally planar second face and the side faces.

Electronic component, a semiconductor wafer and a method for producing an electronic component

A method for manufacturing a transformer device includes providing a glass substrate having a first side and a second side arranged opposite the first side, forming a first recess in the glass substrate at the first side of the glass substrate, forming a second recess in the glass substrate at the second side of the glass substrate opposite to the first recess, forming a first coil in the first recess, and forming a second coil in the second recess.

Growing community of inventors

Villach, Austria

Friedrich Kroener