Infineon Technologies Ag

Austria Mikro Systeme International Aktiengesellschaft

Friedrich Kr&ouml;ner

Matthias Gerss

A method for producing a re-releasable bond between two wafers which is stable at high temperatures and mechanically stable is described. The two wafers to be bonded are placed one on top of the other in such a way that a surface of the first wafer is disposed on a surface of the second wafer. Interspaces at least partially connecting the surfaces are created between the wafers. A liquid glass compound is introduced into the interspaces in such a way that a liquid glass film wetting the inner surfaces of the interspaces is formed, in which process voids that are connected to the atmosphere surrounding the wafers remain inside the interspaces wetted with the liquid glass compound. To transform the wetting liquid glass film into a solid silicon dioxide film, the wafers lying one on top of the other are subjected to a temperature treatment.

Method for producing a stable bond between two wafers

Semiconductor chips are mounted on a multilayer wiring of a silicon carrier substrate, while the bottom side of the carrier substrate is provided with soldering contacts in the form of solder balls and is structured in such a way that for each soldering contact a cavity, which extends through the silicon carrier substrate and is filled by the respective solder ball, is formed, so that the solder ball itself makes contact with the multilayer wiring. In this configuration, at least the side walls of the cavity are lined with an insulating material. The insulating layer is applied prior to the application of the multilayer wiring to the structured silicon carrier substrate.

Method for producing a semiconductor component with a silicon carrier substrate

A process having a robust process sequence for producing an MOS field effect transistor having a horizontal buried gate formed of polysilicon and a recombination zone provided at the surface of the transistor includes the steps of producing the horizontal polysilicon gate first and then introducing the recombination zone. The process allows producing a transistor without encountering problems caused by the insufficient high-temperature compatibility of metals.

Growing community of inventors

Villach, Austria

Friedrich Kröner

Growing community of inventors

Villach, Austria

Friedrich Kr&ouml;ner

Friedrich Kröner