Leland Stanford Junior University

Honda Motor Co., Ltd.

Honda Giken Kogyo Kabushiki Kaisha

Samsung Electronics Co., Ltd.

Volkswagen Ag

Other

Quantumscape Corporation

Honda Patents & Technologies North America, LLC

Quantrumscape Corporation

Volkswagen Aktiengesellschaf

Friedrich B Prinz

Timothy P Holme

Yuji Saito

Jun Sasahara

Tadahiro Kubota

Ryan Patrick O'Hayre

Sang-Joon John Lee

Andrei Teodor Iancu

Nariaki Kuriyama

Neil Dasgupta

Suk-Won Cha

Toshifumi Suzuki

Tibor Fabian

Shicheng Xu

Rainer Johannes Fasching

Yongmin Kim

Thomas Schladt

Daniel Braithwaite

Turgut M Gür

Thomas F Jaramillo

Masayuki Sugawara

Yaocheng Liu

Tanja Graf

James F Mack

Yong-Il Park

Suk Won Cha

Gerold Huebner

Takane Usui

Weston Arthur Hermann

Joseph Han

Hitoshi Iwadate

Jonathan Edward Mueller

Sangkyun Kang

Hideaki Tsuru

Wonyoung Lee

Hee Joon Jung

Drew C Higgins

Zhaoxuan Wang

Michael C Langston

Alexander G Cooper

Munekazu Motoyama

Stephen P Walch

Cheng-Chieh Chao

Dong Un Lee

Joon Hyung Shim

Hong Huang

Ki-Hyun Kim

Tim Holme

Yuji Isogai

Robert Lane Smith

Paul J Wang

Georg Brasseur

Byong-Ho Park

David H Liang

John Provine

Marat Orazov

Kyung Min Lee

Maha Yusuf

Hanna-Lena Wittern

WonHyoung Ryu

Kyle Hammerick

Ralph S Greco

Ali Farvid

Pei-Chen Su

Amy Chang-Chien

Rudolf Leitgeb

Jurgen Stampfl

Yih-Lin Cheng

Anastasios Golnas

Peter Schindler

Xiaochun Li

Xu Tian

Yi Cui

Juan G Santiago

Ross Daniel Venook

Ching-Mei Hsu

Sang-Kyun Kang

Bryant Lin

Masafumi Nakamura

Jagdeep Singh

Bob S Hu

John K Eaton

Stacey F Bent

Minoru Matsunaga

Günter D Niemeyer

Sebastian Kirsch

Ye Tao

Jinsung Kang

Robert C Robbins

Morgan Clyburn

Dino Accoto

SangKyun Kang

Vedran Glavas

David J K Goldhaber

Timothy Stephen English

Jonathan Posner

Amin Al-Ahmad

Xirong Jiang

Jihwan An

Joonhyung Shim

A manufacturing process includes: depositing a catalyst support on a gas diffusion layer to form a catalyst support-coated gas diffusion layer; depositing a catalyst on the catalyst support-coated gas diffusion layer to form a catalyst-coated gas diffusion layer; and depositing an ionomer on the catalyst-coated gas diffusion layer to form an ionomer-coated gas diffusion layer. A membrane electrode assembly for a fuel cell includes: a gas diffusion layer; a polymer electrolyte membrane; and a catalyst layer disposed between the gas diffusion layer and the polymer electrolyte membrane, wherein the catalyst layer includes an ionomer, and a concentration of the ionomer varies within the catalyst layer according to a concentration profile.

Catalyst layer with extended surface area and method of forming such catalyst layer for polymer electrolyte fuel cells

A catalyst structure includes: (1) a substrate; (2) a catalyst layer on the substrate; and (3) an adhesion layer disposed between the substrate and the catalyst layer. In some implementations, an average thickness of the adhesion layer is about 1 nm or less. In some implementations, a material of the catalyst layer at least partially extends into a region of the adhesion layer. In some implementations, the catalyst layer is characterized by a lattice strain imparted by the adhesion layer.

Electrochemical catalysts with enhanced catalytic activity

A supported catalyst includes: (1) a catalyst support; and (2) deposits of a catalyst covering the catalyst support, wherein the deposits have an average thickness of about 2 nm or less, and the deposits are spaced apart from one another.

Ultrathin electrochemical catalysts on catalyst support for proton exchange membrane fuel cells

A method includes: 1) performing an atomic layer deposition cycle including (a) introducing precursors into a deposition chamber housing a substrate to deposit a material on the substrate; and (b) introducing a passivation gas into the deposition chamber to passivate a surface of the material; and 2) repeating 1) a plurality of times to form a film of the material.

Atomic layer deposition with passivation treatment

A manufacturing process includes: depositing a first catalyst on a first gas diffusion layer (GDL) to form a first catalyst-coated GDL; depositing a first ionomer on the first catalyst-coated GDL to form a first gas diffusion electrode (GDE); depositing a second catalyst on a second GDL to form a second catalyst-coated GDL; depositing a second ionomer on the second catalyst-coated GDL to form a second GDE; and laminating the first GDE with the second GDE and with an electrolyte membrane disposed between the first GDE and the second GDE to form a membrane electrode assembly (MEA). A MEA includes a first GDL; a second GDL; an electrolyte membrane disposed between the first GDL and the second GDL; a first catalyst layer disposed between the first GDL and the electrolyte membrane; and a second catalyst layer disposed between the second GDL and the electrolyte membrane, wherein a thickness of the electrolyte membrane is about 15 &#x3bc;m or less.

Scalable roll-to-roll fabrication of high-performance membrane electrode assemblies

Solid state energy storage systems and devices are provided. A solid state energy storage devices can include an active layer disposed between conductive electrodes, the active layer having one or more quantum confinement species (QCS), such as quantum dots, quantum particles, quantum wells, nanoparticles, nanostructures, nanowires and nanofibers. The solid state energy storage device can have a charge rate of at least about 500 V/s and an energy storage density of at least about 150 Whr/kg.

Solid state energy storage devices

High density energy storage in semiconductor devices is provided. There are two main aspects of the present approach. The first aspect is to provide high density energy storage in semiconductor devices based on formation of a plasma in the semiconductor. The second aspect is to provide high density energy storage based on charge separation in a p-n junction.

Energy storage device with large charge separation

A method of forming a composite dielectric material can be provided by performing a first deposition cycle to form a first dielectric material and performing a second deposition cycle to form a second dielectric material on the first dielectric material, wherein the first and second dielectric materials comprise different dielectric materials selected from a list consisting of a transition metal nitride, a transition metal oxide, a transition metal carbide, a transition metal silicide, a post-transition metal nitride, a post-transition metal oxide, a post-transition metal carbide, a post-transition metal silicide, a metalloid nitride, a metalloid oxide, and a metalloid carbide.

Semiconductor devices including electrically isolated patterns and method of fabricating the same

A method of growing crystals on two-dimensional layered material is provided that includes reversibly hydrogenating a two-dimensional layered material, using a controlled radio-frequency hydrogen plasma, depositing Pt atoms on the reversibly hydrogenated two-dimensional layered material, using Atomic Layer Deposition (ALD), where the reversibly hydrogenated two-dimensional layered material promotes loss of methyl groups in an ALD Pt precursor, and forming Pt-O on the reversibly hydrogenated two-dimensional layered material, using combustion by O, where the Pt-O is used for subsequent Pt half-cycles of the ALD process, where growth of Pt crystals occurs.

Functionalized graphene-Pt composites for fuel cells and photoelectrochemical cells

To address the needs in the art, a method of cleaving substrate material that includes forming an initial crack in a bulk substrate material, where the crack is aligned along a cleaving plane of the bulk substrate material, aligning the cleaving plane between two parallel electrodes in a controlled environment, wherein the parallel electrodes include a top electrode and a bottom electrode, where the cleaving plane is parallel with the two parallel electrodes, where a bottom portion of the bulk substrate material is physically and electrically connected to the bottom electrode, and applying a voltage across the two parallel electrodes, where the voltage is at least 50 kV and establishes a uniform electromagnetic force on the top surface of the bulk substrate material, where the electromagnetic force is capable of inducing crack propagation along the cleaving plane and separating a cleaved substrate material from the bulk substrate material.

Method of controlled crack propagation for material cleavage using electromagnetic forces

Provided is a method of forming a thin film of a semiconductor device. The method includes forming a precursor layer on a surface of a substrate by supplying a precursor gas into a chamber, discharging the precursor gas remaining in the chamber to an outside of the chamber by supplying a purge gas into the chamber, supplying a reactant gas into the chamber, generating plasma based on the reactant gas, forming a thin film by a chemical reaction between plasma and the precursor layer and radiating extreme ultraviolet (EUV) light into the chamber, and discharging the reactant gas and the plasma remaining in the chamber by supplying a purge gas into the chamber.

Method of forming thin film of semiconductor device

A method of forming a free-standing silicon film that includes providing a Si substrate, depositing a layered structure on the Si substrate, where the layered structure includes a Si device layer and a SiGe sacrificial layer, and removing the SiGe sacrificial layer with a spin etch process, where the Si device layer is released from the layered structure.

Method of fabricating thin, freestanding, single crystal silicon sheet

Described in this patent application are devices for energy storage and methods of making and using such devices. In various embodiments, blocking layers are provided between dielectric material and the electrodes of an energy storage device. The block layers are characterized by higher dielectric constant than the dielectric material. There are other embodiments as well.

Growing community of inventors

Woodside, CA, United States of America

Friedrich B Prinz