Nxp B.v.

Sciosense B.v.

Ams Ag

Frederik Willem Maurits Vanhelmont

Andreas Bernardus Maria Jansman

Nebojsa Nenadovic

Robertus Adrianus Maria Wolters

Jaap Ruigrok

Mark Isler

Jacobus Josephus Maria Ruigrok

Agata Sakic

Hilco Suy

Micha In't Zandt

Roel Daamen

Willem Frederik Adrianus Besling

Kim Phan Le

Remco Henricus Wilhelmus Pijnenburg

Olaf Wunnicke

Hans-Peter Loebl

Casper Van Der Avoort

Robert Frederick Milsom

Robert Hendrikus Margaretha Van Veldhoven

Martijn Goossens

Dimitri Soccol

Anderson Singulani

Johannes Van Wingerden

Alexé Levan Nazarian

Fredericus Christiaan Van Den Heuvel

Alexe Nazarian

Rensinus Cornelis Strijbos

Hooman Habibi

Guido Stefanuto

A sensor device includes a first sensor including a heating element configured to heat up the first sensor in a controllable manner and a second sensor thermally coupled to the heating element of the first sensor such that the heating element is further configured to heat up the second sensor in a controllable manner.

Sensor device and method for operating a sensor device

A monolithic sensor arrangement, a manufacturing method and a measurement method are disclosed. In an embodiment a monolithic gas sensor arrangement includes a sensor including a first transducer with a first sensitive layer and a second transducer with a second sensitive layer, and a readout circuit configured to generate a first measurement signal and a second measurement signal depending on the first and second transducers, wherein the sensor arrangement is a humidity sensor arrangement, wherein the first and second sensitive layers are configured to absorb water molecules, and wherein the first and second sensitive layers differ from each other in at least one property.

Monolithic sensor arrangement, manufacturing method and measurement method

In an embodiment a system includes a sensor including a base having a base electrode and a first membrane suspended above the base, wherein the first membrane has a first membrane electrode, wherein the first membrane is configured to deflect with respect to the base electrode in response to an environmental condition, and wherein the sensor is configured to measure a capacitance between the base electrode and the first membrane electrode. The system further includes a first device of the system configured to generate electrical interference signals, a first electrically conductive shield layer positioned between the sensor and the first device of the system, wherein the first electrically conductive shield layer defines a plurality of first apertures extending through the first electrically conductive shield layer and a dielectric material disposed in the plurality of first apertures.

Capacitive sensors having temperature stable output

A sensor semiconductor device comprises a transducer which comprises a capacitor with at least two electrodes. The transducer further comprises a polymer which is arranged between at least two electrodes of the capacitor, and a top surface of the transducer. The polymer is able to absorb water and the top surface is arranged such that it is exposed to the environment of the sensor semiconductor device. Furthermore, at least a part of the top surface is superhydrophobic and the sensor semiconductor device is capable of measuring the humidity of the environment of the sensor semiconductor device.

Sensor semiconductor device

The sensor semiconductor device comprises a substrate () with a main surface (), a sensor region () on or above the main surface, a coating layer () above the main surface, and a trench () formed in the coating layer around the sensor region. The trench provides drainage of a liquid from the coating layer.

Sensor semiconductor device and method of producing a sensor semiconductor device

It is described a magnetic field differential sensor system for measuring rotational movements of a shaft. The described magnetic field sensor system () comprises (a) a biasing magnet () configured for generating a biasing magnetic field; (b) a magnetic wheel () having a wheel axis and a circumferential surface which comprises a regular structure of teeth () and gaps () arranged in an alternating manner, wherein (i) the magnetic wheel () is attachable to the shaft and (ii) the magnetic wheel () can be magnetized by the biasing magnetic field; and (c) a magnetic sensor arrangement () comprising four magnetic sensor elements () being connected with each other in a Wheatstone bridge configuration. Respectively two of the magnetic sensor elements () are assigned to one half bridge of the Wheatstone bridge. Further, the four magnetic sensor elements () are arranged within an y-z plane, wherein an x-axis, a y-axis and a z-axis define an orthogonal Cartesian coordinate system in which (i) the x-axis is oriented parallel with the wheel axis of the magnetic wheel (), (ii) the y-axis is oriented tangential to the circumferential surface of the magnetic wheel (), and (iii) the z-axis is the symmetry line through the center of the biasing magnet () and the center of the magnetic wheel (). The magnetic sensor elements can be hall sensor elements or magnetoresistive sensor elements ().

Magnetic field sensor system with a magnetic wheel rotatable around a wheel axis and with magnetic sensor elements being arranged within a plane perpendicular to the wheel axis

A method is described for manufacturing a magnetic sensor module () having magnetic sensor elements () monolithically integrated at a semiconductor chip () which comprises an integrated circuit. The described method comprises (a) providing a composite semiconductor arrangement () comprising (i) the semiconductor chip (), (ii) contact elements () for the integrated circuit, which are formed on the semiconductor chip (), and (iii) a dielectric layer () formed over the semiconductor chip () and over the contact elements (), (b) forming a magnetic sensor layer providing the material for the magnetic sensor elements () monolithically over the dielectric layer (), (c) exposing the contact elements () by removing a part of the dielectric layer () which part is located above the contact elements (), and (d) forming an electric conductive protection layer () over either the formed magnetic sensor layer or the exposed contact elements () in order to prevent negative interactions between (i) the step of forming the magnetic sensor elements () resulting from the magnetic sensor layer and (ii) the step of exposing the contacting elements (). It is further described a magnetic sensor module () which is manufactured by the above described method.

Manufacturing magnetic sensor elements monolithically integrated at a semiconductor chip comprising an integrated circuit

A magnetic field sensor system for measuring rotational movements of a shaft is disclosed. The sensor system includes a biasing magnet configured for generating a biasing magnetic field and a magnetic wheel having a wheel axis and a circumferential surface which comprises a regular structure of teeth and gaps arranged in an alternating manner. The magnetic wheel is attachable to the shaft and is magnetizable by the biasing magnetic field. A magnetoresistive sensor arrangement comprising four magnetoresistive sensor elements being connected with each other in a Wheatstone bridge, respectively two of the magnetoresistive sensor elements being assigned to one half bridge of the Wheatstone bridge. The four magnetoresistive sensor elements are arranged within an x-y plane.

Magnetic field sensor system with a biasing magnet producing a spatially symmetric magnetic field within a plane being defined by magnetoresistive sensor elements

A magnetoresistive sensor comprising first and second magnetoresistive elements is disclosed. Each magnetoresistive element is coupled at a respective first end to a common ground terminal and comprises one or more magnetoresistive segments, each overlying a corresponding segment of an excitation coil. The resistance of the magnetoresistive segments in each of the first and second magnetoresistive elements is the same and the resistance of the segments of the excitation coil corresponding to the first magnetoresistive element is the same as the resistance of the segments of the excitation coil corresponding to the second magnetoresistive element.

Magnetoresistive sensor

An MR sensor arrangement is integrated with an IC. A metal layer of the IC structure (e.g. CMOS) is patterned to define at least first and second contact regions. Metal connecting plugs are provided below the first and second contact regions of the metal layer for making contact to terminals of the integrated circuit. A magnetoresistive material layer is above the metal layer and separated by a dielectric layer. Second metal connecting plugs extend up from the metal layer to an MR sensor layer. The sensor layer is thus formed over the top of the layers of the IC structure.

Magnetic field sensor

A method of manufacturing a Bulk Acoustic Wave device by providing an active layer formed of an electro-mechanical transducer material, providing a first electrode on the active layer, defining a first electrode portion of the device, whereby a remaining portion of the device is defined around the first electrode, providing a stop-layer on the first electrode, depositing a first dielectric layer on the resultant structure, and planarizing the first dielectric layer until the stop-layer on the first electrode is exposed.

Method of manufacturing a bulk acoustic wave device

A thin-film bulk acoustic wave (BAW) resonator, such as SBAR or FBAR, for use in RF selectivity filters operating at frequencies of the order of 1 GHz. The BAW resonator comprises a piezoelectric layer () having first and second surfaces on opposing sides, a first electrode () extending over the first surface, and a second electrode () extending over the second surface, the extent of the area of overlap (R) of the first and second electrodes determining the region of excitation of the fundamental thickness extensional (TE) mode of the resonator. The insertion loss to the resonator is reduced by providing a dielectric material () in the same layer as the first electrode () and surrounding that electrode. The material constituting the dielectric material () has a different mass, typically between 5% and 15%, from the material comprising the first electrode () it surrounds. The mass of the dielectric material () can be lower or higher than the mass of the first electrode (). Planarisation of the dielectric material () enhances the performance of the device.

Growing community of inventors

Maaseik, Belgium

Frederik Willem Maurits Vanhelmont