Siemens Aktiengesellschaft

Infineon Technologies Ag

Frederik Ponse

Erwin Knapek

Gabrielle Belle

A semiconductor component, such as a high-frequency integrated circuit, includes a semiconductor substrate with one or more transistors formed thereon. First, second and third electrode terminals are respectively associated with the gate or base terminal, the source or emitter terminal, and with the drain or collector terminal of the transistors. Each electrode terminal is formed with one or more finger sections and one contact area section electrically connected to the associated finger section. The area of the contact section is considerably enlarged as compared with the area of the individual finger section of the electrode terminal. At least one electrode terminal, whose contact area section is disposed on one side of the finger sections, has a further contact area section electrically connected to the associated finger section. The further contact area section is disposed on the opposite side relative to the finger sections. The connection to the finger sections associated with the one terminal extends above a supply line leading to the gate or base terminal, thereby forming an insulating crossing point. On the opposite side with respect to the finger sections, also forming insulating crossing points, it is carried in the form of bars below the supply lines belonging to the third electrode terminal.

Semiconductor component

A clearing frame for a semiconductor component is provided to enable a sufficient positioning of a particle beam. The clearing frame has a higher electrical conductivity than the environment thereof. The clearing frame also enables the determination of the layer resistance of the implantation via the high-frequency loss resistance measurement free from contact and destruction. The clearing frame can be placed at a fixed external DC potential, for example source or drain potential and therefore side gating effects can be avoided.

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Unterhaching, Germany

Frederik Ponse