Infineon Technologies Ag

Frederik Otto

Thorsten Meyer

Frank Singer

Francisco Javier Santos Rodriguez

Andreas Grassmann

Martin Mischitz

Paul Frank

Barbara Eichinger

Christian Stahlhut

Nicolas Heuck

Fabian Craes

Christian Steininger

Michael Fuegl

Fabien Thion

Christoph Bayer

An electronic device comprises a semiconductor die, a layer stack disposed on the semiconductor die and comprising one or more functional layers, wherein the layer stack comprises a protection layer which is an outermost functional layer of the layer stack, and a sacrificial layer disposed on the protection layer, wherein the sacrificial layer comprises a material which decomposes or becomes volatile at a temperature between 100&#xb0; and 400&#xb0; C.

Sintering method using a sacrificial layer on the backside metallization of a semiconductor die

A semiconductor device and method for fabricating a semiconductor device, comprising a paste layer is disclosed. In one example the method comprises attaching a substrate to a carrier, wherein the substrate comprises a plurality of semiconductor dies. A layer of a paste is applied to the substrate. The layer above cutting regions of the substrate is structured. The substrate is cut along the cutting regions.

Method for fabricating a semiconductor device comprising a paste layer and semiconductor device

A method for producing a material-bonding connection between a semiconductor chip and a metal layer is disclosed. For this purpose, a semiconductor chip, a metal layer, which has a chip mounting portion, and also a bonding medium containing a metal powder are provided. The metal powder is sintered in a sintering process. In this case, throughout a prescribed sintering time, the prescribed requirements are met, that the bonding medium is arranged between the semiconductor chip and the metal layer and extends right through from the semiconductor chip to the metal layer, that the semiconductor chip and the metal layer are pressed against one another in a pressing-pressure range that lies above a minimum pressing pressure, that the bonding medium is kept in a temperature range that lies above a minimum temperature and that a sound signal is introduced into the bonding medium.

Method for producing a material-bonding connection between a semiconductor chip and a metal layer

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Recklinghausen, Germany

Frederik Otto