Micron Technology Incorporated

Avalanche Technology, Inc.

Frederick Jaffin

Ebrahim Abedifard

Uday Chandrasekhar

Erwin E Yu

Petro Estakhri

Siamack Nemazie

A magnetic memory system includes a magnetic random access memory (MRAM) including a plurality of magnetic memory banks and operative to store data during a write operation initiated by a write command. The magnetic memory system further includes a first-in-first-out (FIFO) interface device coupled to the MRAM and including a plurality of FIFOs Each of the magnetic memory banks is coupled to a respective one of the plurality of FIFOs, the FIFO being operative to queue write commands on a per magnetic memory bank basis and further operative to issue the queued write commands at a time when the MRAM is not in use, wherein concurrent write operations are performed to at least two of the plurality of magnetic memory banks.

Emulation of static random access memory (SRAM) by magnetic random access memory (MRAM)

A method and apparatus that provides the ability to control programming pulses having different widths and/or voltages in a flash memory device. The widths and/or voltage levels of programming pulses are set to achieve programming of all memory cells of an array using a minimum number of programming pulses.

Method and apparatus for programming flash memory

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Gilroy, CA, United States of America

Frederick Jaffin