Motorola Corporation

Frederick J Robinson

Clarence J Tracy

Henry G Hughes

Ping-chang Lue

David Moon Yee

Robert J Mattox

Jeffrey L Galvin

A semiconductor device having electronic circuitry formed in a semiconductor substrate (11) and separated from an overlying metal interconnect layer (18,18') using a fluorinated polymer dielectric (14,14') . The fluorinated polymer layer (14,14') may be formed directly on metallic surfaces, or formed on a semiconductor or non-metallic surface using an adhesion promoter (13,13'). Once formed, the fluorinated polymer layer (14,14') can be patterned to provide vias, and covered with a patterned metal interconnect layer (18,18') .

Method of making a semiconductor device having a low permittivity

A semicondutor device having electronic circuitry formed in a semiconductor substrate (11) and separated from an overlying metal interconnect layer (18, 18') using a fluorinated polymer dielectric (14,14'). The fluorinated polymer layer (14,14') may be formed directly on metallic surfaces, or formed on a semiconductor or non-metallic surface using an adhesion promoter (13,13'). Once formed, the fluorinated polymer layer (14,14') can be patterned to provide vias, and covered with a patterned metal interconnect layer (18, 18').

Semiconductor device having a low permittivity dielectric

A dry etch process allows fabrication of very small SAW electrodes (less than 1 micron wide) on LiNbO.sub.3 (lithium niobate) or quartz substrates. In the process, analuminum (Al) layer is disposed on the substrate, and a photoresist layer is applied and exposed in the appropriate pattern. The wafer is then placed in an RIE where the Al is dry etched using a plasma containing chlorine and fluorine. The photoresist is then removed by an oxygen plasma. The oxygen also operates to replace the chlorine ions. By using this process, very precisely shaped electrodes can be formed.

Reactive ion etch process for surface acoustic wave (SAW) device

A method for the construction of submicron features using optical lithography technology. A material is deposited on a surface to be etched, this material is partially etched through using optical lithography technology. Sidewalls are deposited to reduce the size of this etched area to the submicron size desired. The etch of the layer is then completed resulting in a submicron mask for the substrate below.

Method for obtaining submicron features from optical lithography

A method for removing photoresist from a substrate. A substrate to be stripped of photoresist is placed in a metal substrate holder or boat which is subsequently loaded into a plasma reactor. The holder is placed in contact with one electrode of the plasma reactor. The plasma reactor is evacuated and a hydrogen bearing gas is injected into the reactor at a rate to maintain the pressure between 0.1 and 10 Torr. The photoresist coated substrate is heated to a temperature between 100.degree. C. and 225.degree. C. Power is applied to the plasma reactor to create a hydrogen plasma which reacts with and removes the photoresist. During the removal operation the reflected power from the reactor is monitored to detect the end point of the plasma-photoresist reaction.

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Scottsdale, AZ, United States of America

Frederick J Robinson