Massachusetts Institute of Technology

Frederick J O'Donnell

Frederick J Leonberger

Gary E Betts

Kevin Ray

An electro-optical modulation device comprises a first Mach-Zehnder interferometric modulator. This modulator has balanced optical power in each arm to intensity modulate an optical carrier signal in response to an information signal. The invention also includes a second Mach-Zehnder interferometric modulator that is in a cascade connection with the first modulator and also has balanced optical power in each arm. This second modulator receives the optical carrier signal from the first modulator and also intensity modulates the optical carrier signal in response to the information signal. In another embodiment, the electro-optical modulation device comprises an electro-optical modulator, for intensity modulating an optical carrier in response to an electrical signal, and a reflective termination. The termination reflects the intensity modulated optical carrier signal to travel back through the electro-optical modulator. As a result, the modulation effect of the modulator is effectively doubled. Either embodiment is useful for applications that involve bandwidths of less than one octave, for which the embodiments can be easily optimized. The best examples are links for remote antennas, the most notable exception being cable television. For these sub-octave-bandpass links, second-order distortion does not present a problem since these spurious signals fall outside the band of interest. As a result, the second-order distortion control constraint can be sacrificed in an effort to negate third-order distortion and remediate other problems. This trade-off is not available in broadband cable applications.

Sub-octave bandpass optical remote antenna link modulator and method

An optoelectronic switch has been formed from a semi-insulating substrate of indium phosphide doped with a deep level impurity and disposed intermediate a microstrip transmission line. One conductor of the transmission line has a small gap in its metallization. Upon illumination of the gap by laser pulses which are absorbed near the semiconductor surface, a photogenerated electron-hole plasma forms thereby providing a conducting path across the gap turning the switch 'on.' A process of fabricating the switch is described, an important feature of which is a heat-treatment process which improves the response time of the switch to .about.50 picoseconds. Another important part of the invention is the formation of an optically semi-transparent metallic film at the gap surface. This provides greater efficiency in the coupling of light into the device at the gap while at the same time maintaining a short electronically non-conductive gap and thus a relatively low ON-state impedance for the switch.

Growing community of inventors

Billerica, MA, United States of America

Frederick J O'Donnell