Infinera Corporation

Little Optics Inc

Nomadics, Inc.

The United States of America as Represented by the National Security Agency

Other

The United States of America as Represented by the Director of the National Security Agency

Frederick Gorr Johnson

Oliver S King

Sai T Chu

Brent Everett Little

David M Gill

Marcus Schuetz

Bikash Koley

Linda M Wasiczko

John V Hryniewicz

Shiou-Jyh Ja

Brian Strecker

Robert K Shelton

Lloyd Neal Salsman

Lance G Joneckis

Mario Dagenais

Edward Thomas Knobbe

Shaopeng Wang

Timothy J Davidson

Warren P Berk

Akhilesh Ramachandran

David Wesley Goad

An integrated optical device is disclosed comprising a substrate, optical waveguide, and compound optical resonator having a temperature sensor, at least two coupled optical resonators, and a heater localized to each optical resonator. An optical input signal is coupled to one of the resonators making up the compound resonator to form an optical output signal. The center wavelength and shape of the output signal is optimized with a feedback loop using the temperature sensor to control the power dissipated in at least one of the localized heaters. The power dissipated in the remaining resonator heaters is set according to a predetermined function having as an input variable the power dissipated in the resonant heater under control of the said feedback loop.

Coupled optical waveguide resonators with heaters for thermo-optic control of wavelength and compound filter shape

The current invention provides methods for detecting trace analytes in solution or suspension using coupled micro-ring resonators. The methods of the current invention determine the presence and concentration of the target analytes in real time by exposing the micro-ring resonator to the analyte and determining the resulting rate of change of resonance wavelength experienced by a sensing micro-ring resonator as compared to a reference micro-ring resonator.

Integrated optical resonator device for measuring chemical and biological analyte concentrations

An optically-powered integrated microstructure pressure sensing system for sensing pressure within a cavity. The pressure sensing system comprises a pressure sensor having an optical resonant structure subject to the pressure within the cavity and having physical properties changing due to changing pressures within the cavity. A substrate supports the optical resonant structure. An input optical pathway evanescently couples light into the optical resonant structure. An output optical pathway collects light from the optical resonance structure. A light source delivers a known light input into the input optical pathway whereby the known light input is evanescently coupled into the optical resonant structure by the input optical pathway and a portion of such light is collected from the optical resonant structure by the output optical pathway. A light detector receives the portion of the light collected from the optical resonant structure, and generates a light signal indicative of such portion of the light collected from the optical resonant structure. A temperature compensation sensor generates a temperature signal indicative of the temperature near the optical resonant structure. A spectrum detection device receives the light signal and temperature signal. The spectrum detection device analyzing the light signal and the temperature signal with a detection algorithm to generating a pressure signal indicative of the pressure within the cavity.

Microresonator-based high-performance high-pressure sensor and system

An optically-powered integrated microstructure pressure sensing system for sensing pressure within a cavity. the pressure sensing system comprises a pressure sensor having an optical resonant structure subject to the pressure within the cavity and having physical properties changing due to changing pressures within the cavity. A substrate supports the optical resonant structure. An input optical pathway evanescently couples light into the optical resonant structure. An output optical pathway collects light from the optical resonance structure. A light source delivers a known light input into the input optical pathway whereby the known light input is evanescently coupled into the optical resonant structure by the input optical pathway and a portion of such light is collected from the optical resonant structure by the output optical pathway. A light detector receives the portion of the light collected from the optical resonant structure, and generates a light signal indicative of such portion of the light collected from the optical resonant structure. A temperature compensation sensor generates a temperature signal indicative of the temperature near the optical resonant structure. A spectrum detection device receives the light signal and temperature signal. The spectrum detection device analyzing the light signal and the temperature signal with a detection algorithm to generating a pressure signal indicative of the pressure within the cavity.

Silicon-oxycarbide optical waveguides and thermooptic devices include a substrate and a first cladding layer having a first refractive index positioned over a substrate. A first core layer comprising silicon, oxygen, and carbon and having a core refractive index is formed on the first cladding layer by chemical vapor deposition using at least two precursors: one inorganic silicon precursor gas and at least one second precursor gas comprising carbon and oxygen. Alternatively, at least three precursors can be used: one inorganic silicon precursor gas, a second precursor comprising carbon, and a third precursor comprising oxygen. The core layer is lithographically patterned to define waveguide elements. A second cladding layer having a second cladding refractive index is formed to surround the optical core waveguiding element of the first core layer.

Silicon-oxycarbide high index contrast, low-loss optical waveguides and integrated thermo-optic devices

The integrated optical circuit of the present invention includes a substrate with a first cladding layer. A first core layer having one or more waveguiding elements is formed on the first cladding layer. A second cladding layer surrounds the waveguiding elements of the first core layer; the refractive index of the first and second cladding layers are selected to be less than the refractive index of the waveguiding element(s). Through simultaneous cladding material deposition and cladding material removal, the second cladding layer as deposited is substantially self-planarized, enabling further layers to be positioned on the second cladding layer without necessitating intermediate planarization. Further, the present invention permits planar waveguide cores having submicron core spacings to be covered by a subsequently-deposited cladding layer without cladding gaps, seams or other deleterious cladding defects.

Integrated optical circuit with dense planarized cladding layer

Devices and methods for the vapor deposition of amorphous, silicon-containing thin films using vapors comprised of deuterated species. Thin films grown on a substrate wafer by this method contain deuterium but little to no hydrogen. Optical devices comprised of optical waveguides formed using this method have significantly reduced optical absorption or loss in the near-infrared optical spectrum commonly used for optical communications, compared to the loss in waveguides formed in thin films grown using conventional vapor deposition techniques with hydrogen containing precursors. In one variation, the optical devices are formed on a silicon-oxide layer that is formed on a substrate, such as a silicon substrate. The optical devices of some variations are of the chemical species SiO N :D. Since the method of formation requires no annealing, the thin films can be grown on electronic and optical devices or portions thereof without damaging those devices.

Use of deuterated gases for the vapor deposition of thin films for low-loss optical devices and waveguides

A method of selectively oxidizing III-V semiconductor material is provided. There is provided a III-V semiconductor system comprising a short-period super lattice (SSL) of N periods of alternating layers of an aluminum-bearing III-V compound semiconductor material and a second III-V semiconductor material where N&gE;2, at least one phosphorous-rich III-V semiconductor layer, and at least one substantially phosphorous-free III-V semiconductor layer between each of the at least one phosphorous-rich layers and the SSL. The III-V semiconductor system is exposed to oxidizing atmosphere to selectively oxidize at least a portion of the SSL.

Method of efficient controllable and repeatable wet oxidation in a phosphorous-rich III-V material system

A method of forming a native oxide from at least one strain-compensated superlattice of Group III-V semiconductor material, where each at least one superlattice includes two monolayers of a Group III-V semiconductor material and at least two monolayers of an aluminum-bearing Group III-V semiconductor material. The method entails exposing each at least one superlattice to a water-containing environment and a temperature of at least about 425 degrees Celsius to convert at least a portion of said superlattice to a native oxide. The native oxide thus formed is useful in electrical and optoelectrical devices, such as lasers.

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Ellicott City, MD, United States of America

Frederick Gorr Johnson