Google Inc.

Advanced Micro Devices Corporation

Metaram, Inc.

Compaq Computer Corporation, Inc.

Other

Altera Corporation

Advanced Micro Device, Inc.

Compaq Computer Corporation and Advanced Micro Devices, Inc.

Frederick Daniel Weber

Suresh Rajan

David T Wang

Keith R Schakel

Michael John Sebastian Smith

John Gregory Favor

John S Thayer

Norbert Juffa

Stuart F Oberman

Dale E Gulick

Stephan G Meier

Hamid Partovi

Donald A Draper

Robert C Burd

Udin Salim

Gary W Thome

Ravikrishna Cherukuri

Michael J S Smith

Ming Siu

Luigi Di Gregorio

Geoffrey S Strongin

Daniel L Rosenband

Brian E Longhenry

Alisa M Scherer

Scott A White

Mark Douglas Hummel

Larry David Hewitt

William Alexander Hughes

Gerald Robert Talbot

Michael T Clark

R Stephen Polzin

Patrick N Conway

Gerald David Zuraski, Jr

Paul C Miranda

Michael David Achenbach

Shwetal Arvind Patel

Richard W Reeves

William Kurt Lewchuk

Ross Voigt La Fetra

Luigi DiGregorio

Michael John Sebastien Smith

Suresh Natarajan Rajan

A memory circuit system and method are provided in the context of various embodiments. In one embodiment, an interface circuit remains in communication with a plurality of memory circuits and a system. The interface circuit is operable to interface the memory circuits and the system for performing various functionality (e.g. power management, simulation/emulation, etc.).

Configurable memory circuit system and method

A memory circuit system and method are provided. An interface circuit is capable of communication with a plurality of memory circuits and a system. In use, the interface circuit is operable to translate an address associated with a command communicated between the system and the memory circuits.

Translating an address associated with a command communicated between a system and memory circuits

A memory circuit system and method are provided. An interface circuit is capable of communication with a plurality of memory circuits and a system. In use, the interface circuit is operable to interface the memory circuits and the system for reducing command scheduling constraints of the memory circuits.

System and method for reducing command scheduling constraints of memory circuits

A system and method are provided. In use, at least one of a plurality of memory circuits is identified. In association with the at least one memory circuit, a power saving operation is performed and the communication of a signal thereto is delayed.

Combined signal delay and power saving for use with a plurality of memory circuits

One embodiment of the present invention sets forth a hybrid memory module that combines memory devices of different types while presenting a single technology interface. The hybrid memory module includes a number of super-stacks and a first interface configured to transmit data between the super-stacks and a memory controller. Each super-stack includes a number of sub-stacks, a super-controller configured to control the sub-stacks, and a second interface configured to transmit data between the sub-stacks and the first interface. Combining memory devices of different types allows utilizing the favorable properties of each type of the memory devices, while hiding their unfavorable properties from the memory controller.

Hybrid memory module

A system and method are provided for simulating an aspect of a memory circuit. Included is an interface circuit that is in communication with a plurality of memory circuits and a system. Such interface circuit is operable to interface the memory circuits and the system for simulating at least one memory circuit with at least one aspect that is different from at least one aspect of at least one of the plurality of memory circuits. In accordance with various embodiments, such aspect may include a signal, a capacity, a timing, and/or a logical interface.

Simulating a memory circuit

A method includes presenting multiple memory circuits to a system as a virtual memory circuit having at least one characteristic that is different from a corresponding characteristic of one of the physical memory circuits; receiving, at an interface circuit, a first command issued from the system to the virtual memory circuit; and in response to receiving the first command, 1) directing a copy of the first command to a first physical memory circuit of the multiple physical memory circuits, and 2) performing a power-saving operation on at least one other physical memory circuit of the multiple physical memory circuits.

Memory circuit system and method

A memory module, which includes at least one memory stack, comprises a plurality of DRAM integrated circuits and an interface circuit. The interface circuit interfaces the memory stack to a host system so as to operate the memory stack as a single DRAM integrated circuit. In other embodiments, a memory module includes at least one memory stack and a buffer integrated circuit. The buffer integrated circuit, coupled to a host system, interfaces the memory stack to the host system so to operate the memory stack as at least two DRAM integrated circuits. In yet other embodiments, the buffer circuit interfaces the memory stack to the host system for transforming one or more physical parameters between the DRAM integrated circuits and the host system.

Memory module with memory stack and interface with enhanced capabilites

An apparatus includes multiple first memory circuits, in which the multiple first memory circuits are positioned on at least one dual in-line memory module (DIMM). The apparatus includes an interface circuit operable to interface the first memory circuits with a system; present the first memory circuits to the system as one or more simulated second memory circuits; transmit, in response to receiving a first refresh control signal sent from the system to the one or more simulated memory circuits, multiple second refresh control signals to the first memory circuits; and apply a respective delay to each second refresh control signal transmitted to a corresponding first memory circuit. Each simulated second memory circuit has a corresponding second memory capacity that is greater than a first memory capacity of at least one of the first memory circuits.

Memory refresh apparatus and method

An apparatus includes multiple first memory circuits, each first memory circuit being associated with a first memory standard, where the first memory standard defines a first set of control signals that each first memory circuit circuits is operable to accept. The apparatus also includes an interface circuit coupled to the first memory circuits, in which the interface circuit is operable to emulate at least one second memory circuit, each second memory circuit being associated with a second different memory standard.

Simulating a memory standard

An apparatus includes multiple first memory circuits, each first memory circuit being associated with a first memory standard, where the first memory standard defines a first set of control signals that each first memory circuit circuits is operable to accept and defines a first version of a protocol. The apparatus also includes an interface circuit coupled to the first memory circuits, in which the interface circuit is operable to emulate at least one second memory circuit, each second memory circuit being associated with a second different memory standard. The second different memory standard defines a second set of control signals that the emulated second memory circuit is operable to accept and defines a second different version of a protocol. Both the first version of the protocol and the second different version of the protocol are associated either with DDR2 dynamic random access memory (DRAM) or with DDR3 DRAM.

Growing community of inventors

San Jose, CA, United States of America

Frederick Daniel Weber