Rambus Inc.

Flex Logix Technologies, Inc.

Hewlett-packard Company

Hefei Reliance Memory Limited

Analog Devices,inc.

Other

Weitek Corporation

Intel Corporation

Cadence Design Systems, Inc.

Lattice Semiconductor Corporation

Highlands Corporation

Rambus Lnc.

Rampart Asset Management, LLC

Frederick Abbott Ware

Craig Edward Hampel

Ely K Tsern

John Eric Linstadt

Richard E Perego

Richard Maurice Barth

Donald C Stark

Thomas Vogelsang

Kenneth Lee Wright

Scott C Best

Suresh Rajan

Ian P Shaeffer

Brent Steven Haukness

John Wood Poulton

Mark A Horowitz

Paul G Davis

Lawrence Lai

Robert E Palmer

Wayne S Richardson

Yuanlong Wang

Matthew Murdy Griffin

Abhijit Mukun Abhyankar

John Bradly Dillon

Kishore Ven Kasamsetty

Brian S Leibowitz

Carl William Werner

Wayne Frederick Ellis

Cheng C Wang

Jared L Zerbe

James Edward Harris

Akash Bansal

Amir Amirkhany

Thomas J Giovannini

Dinesh D Patil

David Nguyen

James A Gasbarro

Bret G Stott

Gary Bela Bronner

Billy Wayne Garrett, Jr

Chad A Bellows

Andrew M Fuller

Jade M Kizer

Michael P Farmwald

Deepak Chandra Sekar

Bradley A May

William N Ng

Hongzhong Zheng

Stefanos Sidiropoulos

Christopher Haywood

John M Wilson

Liji Gopalakrishnan

Kambiz Kaviani

Mohammad Hekmat

Farrukh Aquil

Todd W Bystrom

Catherine Yuhjung Chen

Kevin S Donnelly

Steven Cameron Woo

John Welsford Brooks

Lei Luo

J James Tringali

John Cronan Eble, Iii

Paul Damian Franzon

Thomas J Sheffler

Richard DeWitt Crisp

Yoshihito Koya

John Girdner Atwood, Jr

Michael Raymond Miller

Zhichao Lu

Trung Am Diep

Pradeep Batra

Holden Jessup

Torsten Partsch

Collins Williams

Srinivas Nimmagadda

Valentin Ossman

Andrew V Anderson

Ming Chu Li

Peter D MacWilliams

Thomas J Holman

Richard E Warmke

Paul Michael Farmwald

Donald R Mullen

Nancy David Dillon, Legal Representative

Karnamadakala Krishnamohan

Venu Madhav Kuchibhotla

Timothy Chang

Catherine Chen

Angus William McLaren

Kyung Suk Oh

Farshid Aryanfar

Patrick R Gill

Vlad Fruchter

Reza Navid

Evan Lawrence Erickson

Chi-Ming Yeung

Kurt T Knorpp

Ramprasad Satagopan

Eugene C Ho

Marc Alan Evans

A compute system includes an execution unit (e.g. of a CPU) with a memory controller providing access to a hybrid physical memory. The physical memory is 'hybrid' in that it combines a cache of relatively fast, durable, and expensive memory (e.g. DRAM) with a larger amount of relatively slow, wear-sensitive, and inexpensive memory (e.g. flash). A hybrid controller component services memory commands from the memory controller component and additionally manages cache fetch and evict operations that keep the cache populated with instructions and data that have a high degree of locality of reference. The memory controller alerts the hybrid controller of available access slots to the cache so that the hybrid controller can use the available access slots for cache fetch and evict operations with minimal interference to the memory controller.

Memory controller partitioning for hybrid memory system

A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.

Semiconductor memory systems with on-die data buffering

Memory controllers, devices, modules, systems and associated methods are disclosed. In one embodiment, an integrated circuit (IC) memory controller is disclosed. The IC memory controller includes a first controller command/address (C/A) interface to transmit first and second read commands for first and second read data to a first memory C/A interface of a first bank group of memory. A second command/address (C/A) interface transmits third and fourth read commands for third and fourth read data to a second memory C/A interface of a second bank group of memory. Receiver circuitry receives the first and second read data via a first data link interface and the third and fourth read data via the second data link interface. For a first operating mode, the first and second read data are received after respective first delays following transmission of the first and second read commands and at a first serialization ratio. For a second operating mode, the first and second read data are received after respective second and third delays following transmission of the first and second read commands. The second and third delays are different from the first delays and from each other. The first and second data are received at a second serialization ratio that is different than the first serialization ratio.

DRAM interface mode with improved channel integrity and efficiency at high signaling rates

An integrated circuit comprising a plurality MAC processors, interconnected into a linear pipeline, configurable to process input data, wherein each MAC processor includes (A) a multiplier and (B) an accumulator circuit, and (C) a plurality of rotate input data paths, wherein each rotate input data path couples two sequential MAC processors of the linear pipeline including an input of the multiplier circuit of a first MAC processor of sequential MAC processors to an input of the multiplier circuit of the immediately following MAC processor of the associated sequential MAC processors of the pipeline—wherein each rotate input data path is configurable to provide rotate input data from a first MAC processor of sequential MAC processors of the linear pipeline to the immediately following MAC processor of the associated sequential MAC processors thereby forming a serial circular path via the plurality of rotate input data paths.

MAC processing pipelines, circuitry to configure same, and methods of operating same

An integrated circuit comprising a plurality of multiplier-accumulator circuits connected in series to form a linear pipeline to process first data, via performing a plurality of concatenated multiply and accumulate operations, and generate MAC output data, wherein each multiplier-accumulator circuit of the plurality of multiplier-accumulator circuits includes (i) a multiplier to multiply first data by a multiplier weight data and generate a product data, and (ii) an accumulator, coupled to the multiplier of the associated multiplier-accumulator circuit, to add second data and the product data of the associated multiplier to generate sum data. The integrated circuit further includes an activation circuit, connected to the output of the linear pipeline of the plurality of multiplier-accumulator circuits, to receive the MAC output data and process the MAC output data, via a non-linear activation function, to generate MAC pipeline output data.

MAC processing pipeline having activation circuitry, and methods of operating same

The embodiments described herein describe technologies of dynamic random access memory (DRAM) components for high-performance, high-capacity registered memory modules, such as registered dual in-line memory modules (RDIMMs). One DRAM component may include a set of memory cells and steering logic. The steering logic may include a first data interface and a second data interface. The first and second data interfaces are selectively coupled to a controller component in a first mode and the first data interface is selectively coupled to the controller component in a second mode and the second data interface is selectively coupled to a second DRAM component in the second mode.

Dynamic random access memory (DRAM) component for high-performance, high-capacity registered memory modules

A memory system employs an addressing scheme to logically divide rows of memory cells into separate contiguous regions, one for data storage and another for error detection and correction (EDC) codes corresponding to that data. Data and corresponding EDC codes are stored in the same row of the same bank. Accessing data and corresponding EDC code in the same row of the same bank advantageously saves power and avoids bank conflicts. The addressing scheme partitions the memory without requiring the requesting processor to have an understanding of the memory partition.

Energy-efficient error-correction-detection storage

A memory controller includes an interface to couple to storage class memory (SCM) space and dynamic random access memory (DRAM) space. At least a portion of the DRAM storage space is configured as a cache for the SCM storage space. The interface to receive an incoming tag address for a read operation. Tag comparison circuitry performs a comparison of the incoming tag address to stored tag addresses associated with the DRAM cache. The data in the addressed DRAM cache space is selectively provided directly to the memory controller as first read data based on the results of the comparison.

Memory system with cached memory module operations

A single-ended data transmission system transmits a signal having a signal voltage that is referenced to a power supply voltage and that swings above and below the power supply voltage. The power supply voltage is coupled to a power supply rail that also serves as a signal return path. The signal voltage is derived from two signal supply voltages generated by a pair of charge pumps that draw substantially same amount of current from a power supply.

Configurable, power supply voltage referenced single-ended signaling with ESD protection

A memory controller generates error codes associates with write data and a write address and provides the error codes over a dedicated error detection code link to a memory device during a write operation. The memory device performs error detection, and in some cases correction, on the received write data and write address based on the error codes. If no uncorrectable errors are detected, the memory device furthermore stores the error codes in association with the write data. On a read operation, the memory device outputs the error codes over the error detection code link to the memory controller together with the read data. The memory controller performs error detection, and in some cases correction, on the received read data based on the error codes.

Memory system with error detection

In a microprocessor having an instruction execution unit and first and second sets of process execution resources, context information for a process next-to-be-executed by the instruction execution unit is loaded into a register file, translation lookaside buffer and first-level data cache of the first set of process execution resources during a first interval. During the first interval and concurrently with the loading of context information for the process next-to-be executed, the instruction execution unit executes a current process, including accessing context information for the current process within the register file, translation lookaside buffer and first-level data cache of the second set of process execution resources.

Stall-driven multi-processing

Improvements are disclosed for 'leveling' or averaging out more evenly the number of activate/precharge cycles seen by the rows of a memory component, so that one or more particular rows are not excessively stressed (relative to the other rows). In one embodiment, a memory controller includes remapping facilities arranged to move data stored in a physical row from RPK to RPK' and modify the mapping from logical row RLK while minimizing impact on normal read/write operations. Remapping operations may be scheduled relative to refresh or other maintenance operations. Remapping operations may be conditionally deferred so as to minimize performance impact.

Memory system with activate-leveling method

A memory device includes receivers that use CMOS signaling levels (or other relatively large signal swing levels) on its command/address and data interfaces. The memory device also includes an asynchronous timing input that causes the reception of command and address information from the CMOS level receivers to be decoded and forwarded to the memory core (which is self-timed) without the need for a clock signal on the memory device's primary clock input. Thus, an activate row command can be received and initiated by the memory core before the memory device has finished exiting the low power state. Because the row operation is begun before the exit wait time has elapsed, the latency of one or more accesses (or other operations) following the exit from the low power state is reduced.

Low latency memory access

Disclosed is a memory system including a memory component having at least one tag row and at least one data row and multiple ways to hold a data group as a cache-line or cache-block. The memory system includes a memory controller that is connectable to the memory component to implement a cache and operable with the memory controller and the memory component in each of a plurality of operating modes including a first and second operating mode having differing addressing and timing requirements for accessing the data group. The first operating mode having placement of each of at least two ways of a data group in differing rows in the memory component, with tag access and data access not overlapped. The second operating mode having placement of all ways of a data group in a same row in the memory component, with tag access and data access overlapped.

System application of DRAM component with cache mode

Embodiments generally relate to a memory device. In one embodiment, the memory device includes a clock receiver circuit that receives an external clock signal and provides an internal clock signal. The memory device also includes a delay-locked loop circuit (DLL) having an input, and a circuit that receives the internal clock signal. The circuit selects which pulses of the internal clock signal are applied to the input of the DLL, such that no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval. In another embodiment, a method includes receiving an external clock signal at a clock receiver circuit, receiving an internal clock signal from the clock receiver circuit, and selecting which pulses of the internal clock signal are applied to an input of a DLL, where no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval.

Optimizing power in a memory device

Growing community of inventors

Los Altos Hills, CA, United States of America

Frederick Abbott Ware