Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Frédéric Roux

Nicolas Karst

Simon Perraud

Joël Dufourcq

Sevak Amtablian

Giovanni Altamura

Louis Grenet

A method for producing a P-N junction in a thin film photovoltaic cell comprising a deposition step in which are carried out successively: a layer of precursors of a photovoltaic material of type P or N, a barrier layer and a layer of precursors of a semiconducting material of type N or P, this deposition step being followed by an annealing step carried out with a supply of S and/or Se, this annealing step leading to the formation of an absorbing layer of the type P or N and of a buffer layer of type N or P and of a P-N junction at the interface between said layers.

Method for producing the P-N junction of a thin-film photovoltaic cell and corresponding method for producing a photovoltaic cell

The invention relates to a method for manufacturing a photovoltaic module comprising a plurality of solar cells in a thin-layer structure, in which the following are consecutively formed: an electrode on the rear surface (), a photovoltaic layer () obtained by depositing a layer () of precursors and by annealing such as to convert the precursors into a semiconductor material, and another semiconductor layer () in order to create a pn junction with the photovoltaic layer (); characterized in that the layer () is deposited in a localized manner, such as to leave free at least one area () of the electrode on the rear surface () placed between two adjacent cells, wherein the annealing step modifies said area () which has higher resistivity than the rest of the electrode on the rear surface (), such as to provide electric insulation between two adjacent cells.

Method for manufacturing a photovoltaic module with two etching steps P2 and P3 and corresponding photovoltaic module

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Saint-Égrève, France

Frédéric Roux