L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des

Air Liquide America, L.p.

American Air Liquide, Inc.

L'air Liquide, Societe Anonyme L'etude Et L'exploitation Des Procedes

Frederic Rotman

Juichi Arai

Jean-Marie Friedt

Pierre Claverie

Kevin P McKean

Robert W Connors

Masao Kimura

Pierre Jalby

Frederick W Giacobbe

Benjamin J Jurcik, Jr

The present invention relates to a wave soldering process wherein an inert gas atmosphere is injected inside the wave soldering machine, the inert gas atmosphere having a temperature which might be controlled. Particularly, the atmosphere can be heated at the same or different temperatures before injection, for example in the preheating zones, in the machine. The atmosphere can also be cooled (or injected at ambient temperature) e.g. in the cooling zone. Various atmospheres can be used (similar or different from one zone to another). Also, maintaining the atmosphere under forced laminer flow conditions improves the quality of the solder joints. The thermal efficiency of the heat transfer between the atmosphere and the printed circuit boards is thus greatly enhanced, which means less solder defects, higher components density and decrease of energy consumption and inert gas flow rate.

Process for wave soldering components on a printed circuit board in a

A circuit board is wave soldered as it is carried by a conveyor through a solder wave established in a solder reservoir. Disposed on both sides of the solder wave are gas plenums which discharge shield gas. Each gas plenum includes a top wall, a side wall, and a bottom wall. The side wall is spaced horizontally from the wave, and the bottom wall is submerged within the solder. The side and (optionally) top walls include orifices for directing shield gas (i) at high velocity toward the solder wave to protect the solder wave with an atmosphere of shield gas, and (ii) upwardly toward an underside of the circuit board to strip entrained air therefrom. Instead of being submerged within the solder, the bottom wall could be spaced above the solder and provided with orifices to emit shield gas downwardly between the plenum and solder reservoir to create an inert atmosphere above the solder. Dividers disposed within the plenum form sub-chambers communicating with orifices in respective walls of the plenum so that different gas velocities can be entitled from the orifices. The gas plenums can be rotatably adjustable and further adjustable either vertically or horizontally.

Apparatus and methods for inerting solder during wave soldering

The present invention provides a method of forming a free standing shape made of a material containing refractory metal, which entails providing a mandrel in a CVD enclosure, injecting a refractory halide gas and a reducing gas in the enclosure, reacting the gases in the enclosure to generate a material containing refractory metal, growing a layer of the material containing refractory metal on the mandrel and removing the mandrel to obtain the free standing shape, wherein the reducing gases is a silicon hydride gas or a mixture thereof.

Method of forming refractory metal free standing shapes

The invention relates to a process of making a high purity silicide target comprising the steps of providing a substrate in a CVD enclosure, evacuating said enclosure up to a pressure P1 which is at least equal to or smaller than 5.times.10.sup.-5 Torr, heating the substrate at a temperature T1, which is at least equal to or greater than 20.degree. C., injecting in said enclosure a refractory metal halide MXm having a purity, as far as metallic impurities are concerned, greater than 5N (99,999%) and a silicon hydride having a purity, as far as metallic impurities are concerned, greater than 6N (99,9999%) setting the pressure in the enclosure between about 0.01 Torr and the atmospheric pressure while maintaining the temperature in the CVD enclosure between about 20.degree. C., growing a refractory metal silicide layer on the substrate to make a target having a purity, as far as metallic impurities are concerned, greater than 5N (99,99%), maintaining the temperature in the enclosure during said growing step at a value T2 which is not greater than T1, then withdrawing the target from said CVD enclosure.

Method of forming high purity metal silicides targets for sputtering

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Paris, France

Frederic Rotman