Thales

Centre National De La Recherche Scientifique

Frédéric Nguyen Van Dau

Julie Grollier

Vincent Cros

Henri Jaffres

Albert Fert

Paolo Bondavalli

Manuel Munoz Sanchez

Christophe Coillot

Paul Leroy

Gérard Chanteur

Alain Roux

Jean-Marie George

Frédéric Petroff

Daniel Lacour

This circuit includes a random network, said random network including: nodes, each node being formed with a pad forming an electric contact borne on a face of a substrate; and links between nodes, each link being formed with at least one unidimensional nanometric object with variable and non-volatile resistance having a configured resistance subsequently to the application of a suitable stimulus between at least one pair of pads connected through said link.

Neuromimetic circuit and method of fabrication

A device with adjustable resistance includes two magnetic elements separated by an insulating or semi-conductor element. The resistance of the device depends on the position of a magnetic wall in one of the magnetic elements, the magnetic wall separating two areas of said magnetic element each having a separate homogeneous direction of magnetization. The device comprises means for moving the magnetic wall in the magnetic element by applying a spin-polarized electric current, such that the resistance of the device is adjustable in a continuous range of values. The invention is useful in neuromimetic circuits, neural networks and bio-inspired computers.

Memristor device with resistance adjustable by moving a magnetic wall by spin transfer and use of said memristor in a neural network

The general field of the invention is that of spintronics, namely the field of electronics using the magnetic spin properties of electrons. The main fields of application are the very large-scale magnetic storage of information and the measurement of local magnetic fields. The object of the invention is to considerably reduce the energy needed to reverse the magnetic domains of the ferromagnetic elements of submicron dimensions using the mechanism of the domain wall displacements that is induced either by just a current of spin-polarized carriers or by the combination of a current of spin-polarized carriers and a magnetic field, at least one of these being variable. This domain wall displacement results in a change of magnetic polarization in a specified switching zone. Several devices according to the invention are described that possess from one switching zone up to a plurality of switching zones according to the invention.

Spintronic device with control by domain wall displacement induced by a current of spin-polarized carriers

The invention relates to a magnetic amplification device comprising a magnetic sensor with longitudinal sensitivity, having a first piece of magnetic material and a second piece of magnetic material, each of the pieces having a longitudinal slot at its center, the pieces being separated by a distance called the gap, and the magnetic sensor being inserted into the two slots. The device of the invention typically makes it possible to measure low magnetic fields smaller than the Earth's field using a magnetic sensor of the AMR type.

Magnetic amplification device comprising a magnetic sensor with longitudinal sensitivity

The disclosure relates to a device for controlling magnetization reversal in a controlled ferromagnetic system such as a magnetic memory element, without using an external magnetic field, wherein it comprises between two flat electrodes a magnetic control part comprising, starting from the first electrode, a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer, and the second of said two flat electrodes, the thickness of said second ferromagnetic layer being less than that of said first layer, and the thickness of said second electrode being sufficiently small to enable magnetic coupling between said second ferromagnetic layer and the system controlled by the control device.

Control device for reversing the direction of magnetisation without an external magnetic field

The invention generally relates to the field of spintronics, a branch of electronics using the magnetic spin properties of electrons. More particularly, the invention relates to the field of spin-valve transistors which can be used in numerous fields of electronics. The invention aims to propose an original arrangement for producing high-level and high-contrast collector currents simultaneously. The inventive spintronics transistor comprises a semiconductor emitter, a base fanning a spin valve and a metallic collector separated from the base by an insulating deposit. The emitter/base interface constitutes a Schottky barrier and the base/collector interface constitutes a tunnel-effect barrier.

High performance spin-valve transistor

The invention relates to magnetic field sensors in which magnetoresistance is used as the physical phenomenon for detecting and measuring the magnetic field. It consists in producing a stack comprising a first ferromagnetic layer (), an insulating layer (), a second ferromagnetic layer () and an antiferromagnetic layer (). The two ferromagnetic layers exhibit crossed magnetic anisotropies and form with the insulating layer a tunnel junction. The anisotropy of the first layer is obtained from the shape energy of the substrate on which this first layer rests and which is slightly misoriented with respect thereto. The anisotropy of the second layer is obtained by the action of the antiferromagnetic layer.

Growing community of inventors

Palaiseau, France

Frédéric Nguyen Van Dau