Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Soitec

Stmicroelectronics S.a.

S.o.i.tec Silicon on Insulator Technologies

Frederic Mazen

Shay Reboh

Perrine Batude

Benoit Sklenard

Oleg Kononchuk

Didier Landru

Frank Fournel

Nadia Ben Mohamed

Francois Rieutord

Damien Massy

Hubert Moriceau

Sylvain Maitrejean

Chrystel Deguet

Christophe Morales

Jean-Michel Hartmann

Aurélie Tauzin

Thomas Signamarcheix

Maxime Argoud

Frédéric Milesi

A method of polishing a semiconductor substrate, including: a) a step of multiple implantations of ions from an upper surface of the substrate, to modify the material of an upper portion of the substrate, the multiple implantation step comprising a plurality of successive implantations under different respective implantation orientations; and b) a step of selective removal of the upper portion of the substrate.

Semiconductor substrate polishing method

A process for attaching a first substrate to a second substrate by direct bonding includes the successive steps of: a) providing the first and second substrates, each comprising a first surface and an opposite second surface, b) bonding the first substrate to the second substrate by direct bonding between the first surfaces of the first and second substrates, step b) being carried out under a first gaseous atmosphere having a first relative humidity level denoted by &#x3c6;, and c) applying a thermal annealing treatment to the bonded first and second substrates at a thermal annealing temperature of between 20&#xb0; C. and 700&#xb0; C., step c) being carried out under a second gaseous atmosphere having a second humidity level denoted by &#x3c6;, satisfying &#x3c6;&#x2265;&#x3c6;.

Direct bonding process

A useful layer is layered onto a support by a method that includes the steps of forming an embrittlement plane by implanting light elements into a first substrate, so as to form a useful layer between such plane and one surface of the first substrate; applying the support onto the surface of the first substrate so as to form an assembly to be fractured; applying a heat treatment for embrittling the assembly to be fractured; and initiating and propagating a fracture wave into the first substrate along the embrittlement plane. The fracture wave is initiated in a central area of the embrittlement plane and the propagation speed of the wave is controlled so that the velocity thereof is sufficient to cause the interactions of the fracture wave with acoustic vibrations emitted upon the initiation and/or propagation thereof, if any, are confined to a peripheral area of the useful layer.

Method for transferring a useful layer

Method including the steps consisting in:

Method for doping source and drain regions of a transistor by means of selective amorphisation

A method for producing a microelectronic device is provided, including forming on an insulating layer of a semi-conductor on insulator type substrate, a first semi-conductor block covered with a first strain zone configured to induce a compressive strain in the first block and a second semi-conductor block covered with a second strain zone configured to induce a tensile strain in the second block, the first block and the second block each being formed of a lower region based on amorphous semi-conductor material, covered with an upper region of crystalline semi-conductor material in contact with one of the strain zones; and recrystallizing the lower region of the first and second blocks while using the upper region of crystalline material as starting zone for a recrystallization front.

Method for producing strained semi-conductor blocks on the insulating layer of a semi-conductor on insulator substrate

A method for transferring a useful layer onto a support includes the following processes: formation of a fragilization plane through the implantation of light species into a first substrate in such a way as to form a useful layer between this plane and a surface of the first substrate; application of the support onto the surface of the first substrate to form an assembly to be fractured having two exposed sides; thermal fragilization treatment of the assembly to be fractured; and initiation and self-sustained propagation of a fracture wave in the first substrate along the fragilization plane. At least one of the sides of the assembly to be fractured is in close contact, over a contact zone, with an absorbent element suitable for capturing and dissipating acoustic vibrations emitted during the initiation and/or propagation of the fracture wave.

A method for manufacturing a flexible structure including implanting ionic species in first and second source substrates so as to form first and second embrittlement regions respectively, delimiting first and second thin films, providing a flexible substrate, the stiffness R of which is less than or equal to 10GPa&#xb7;&#x3bc;m, securing the first and second thin films to the first and second faces of the flexible substrate respectively so as to form a stack including the flexible structure delimited by the first and second embrittlement regions, the flexible structure having a stiffening effect suitable for allowing transfers of the first and second thin films, and applying a thermal budget so as to transfer the first and second thin films onto the flexible substrate.

Manufacturing a flexible structure by transfers of layers

Method of manufacturing a transistor on a layer made of a first crystalline semiconducting material to make a channel, deposited on a dielectric layer, the method including the following steps:

Method for manufacturing a transistor in which the strain applied to the channel is increased

A method for manufacturing a transistor is provided, including amorphization and doping, by one or more localized implantations, of given regions of source and drain blocks based on crystalline semi-conductor material disposed on an insulating layer of a semi-conductor on insulator substrate, the implantations being carried out so as to conserve at a surface of said blocks zones of crystalline semi-conductor material on regions of amorphous semi-conductor material; and recrystallization of at least one portion of said given regions.

Recrystallization of source and drain blocks from above

A process for forming a layer () of semiconductor material from a substrate (), or donor substrate, made of the same semiconductor material is described, comprising:

Process for forming a crack in a material

A method of implanting atoms and/or ions into a substrate, including: a) a first implantation of ions or atoms at a first depth in the substrate, to form a first implantation plane, b) at least one second implantation of ions or atoms at a second depth in the substrate, which is different from the first depth, to form at least one second implantation plane.

Growing community of inventors

Saint Egreve, France

Frederic Mazen