E2v Semiconductors

Aledia

Teledyne E2v Semiconductors Sas

Commissariat a L'energie Atomique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Frédéric Mayer

Ivan-Christophe Robin

Xavier Hugon

Frédéric Mercier

Frédéric Barbier

Pierre Fereyre

Olivier Jeannin

Laurent Clavelier

Stéphane Gesset

Henri Bugnet

Maud Vinet

Simon Deleonibus

Thierry Poiroux

Eric Pourquier

Thierry Ligozat

Bruno Diasparra

Philippe Gibert

Emmanuel Petitprez

Sylvia Scaringella

Thomas Lacave

Gerard Billiot

Marie Guillon

Vincent Prevost

Bertrand De Monte

Ray Bell

Vincent Hibon

Joel Vaillant

Maxime Boistard

Pascal Douine

Clémence Tallet

Wei-Sin Tan

Joël Vaillant

Pierre Fereyere

Mickaël Rebaud

A method for protecting optoelectronic devices against electrostatic discharges. Each optoelectronic device includes an electronic circuit including at least one electronic component and one optoelectronic circuit bonded to the electronic circuit and including at last one optoelectronic component from among a light-emitting diode or a photodiode. The method includes forming of first and second wafers, one of the first or second wafer includes a plurality of copies of the electronic circuit and the other one of the first or second wafer including a plurality of copies of the optoelectronic circuit, the bonding of the first wafer to a support, the bonding of the second wafer to the first wafer, and the separation of the electronic devices from one another, wherein the first wafer and/or the second wafer comprises at least one system for protecting optoelectronic devices against electrostatic discharges.

Method for protecting an optoelectronic device from electrostatic discharges

An optoelectronic device includes at least one light-emitting diode having a three-dimensional shape having a height along a longitudinal axis and having a first longitudinal dimension measured along the longitudinal axis and at least a second transverse dimension corresponding to a dimension of the three-dimensional shape measured perpendicular to the longitudinal axis. The first longitudinal dimension and the second transverse dimension are each less than or equal to substantially 20 μm. The optoelectronic device has at least one optical lens capable of transforming the light rays emitted by the light-emitting diode which pass through the optical lens.

Optoelectronic device with micrometric or nanometric light-emitting diode on which an optical lens is mounted

An optoelectronic device including at least first and second light-emitting diodes, each including a first P-type doped semiconductor portion and a second N-type doped semiconductor portion, an active area including multiple quantum wells between the first and second semiconductor portions, a conductive layer covering the lateral walls of the active area and of at least a portion of the first semiconductor portion, and an insulating layer interposed between the lateral walls of the active area and of at least a portion of the conductive layer. The device includes means for controlling the conductive layer of the first light-emitting diode independently from the conductive layer of the second light-emitting diode.

Optoelectronic device comprising light-emitting diodes having multiple quantum wells

A method of protecting optoelectronic devices against electrostatic discharges, each optoelectronic device comprising an optoelectronic circuit comprising at least one optoelectronic component from among a light-emitting diode or a photodiode. The method comprises forming a first wafer, comprising a plurality of copies of the optoelectronic circuit, bonding the first wafer to a support, separating the optoelectronic devices from one another, and removing from the support a plurality of optoelectronic devices from among said optoelectronic devices by means of a gripping system, wherein the gripping system comprises at least one system for protecting optoelectronic devices against electrostatic discharges.

Method for protecting an optoelectronic device against electrostatic discharges

A method of manufacturing an optoelectronic device including assemblies of light-emitting diodes (LED) having first and second assemblies and first blocks made of a first photoluminescent material, each covering one of the first assemblies. The method includes the forming of a layer covering the first and second assemblies, the delimiting of first openings in the layer to expose the first assemblies, the filling of the first openings with the first material, and the performing of a chemical-mechanical polishing to delimit the first blocks.

Method for producing an optoelectronic device

An optoelectronic device includes a number of pixels, with each pixel including a lighting mechanism having at least one light-emitting diode capable of emitting an initial light beam, a light-conversion module having a plurality of conversion pads including at least one primary conversion pad and at least one secondary conversion pad. Each pixel includes a light-adjustment system configured to control at least one element chosen from a relative position between the lighting mechanism and the light-conversion module and the initial light beam. The action of the light-adjustment system is adapted so that the primary conversion pad and the secondary conversion pad emit a first light beam and a second light beam respectively, from the initial light beam, simultaneously or alternately in a predetermined sequence.

Optoelectronic device comprising a light-emitting diode whose emitted beam has a variable incidence on different colour converters according to a predetermined sequence

An optoelectronic device including an integrated circuit including light-emitting diodes, thin film transistors, and a stack of electrically-insulating layers, said stack being located between the light-emitting diodes and the transistors, said stack further including conductive elements, between and through said insulating layers, said conductive elements connecting at least some of the transistors to the light-emitting diodes.

Optoelectronic device

An optoelectronic device having a set of pixels wherein each pixel has a sub-pixel capable of emitting a primary light beam, a set of pixels each pixel being adjacent to a pixel wherein each secondary pixel has at least one secondary sub-pixel capable of emitting a secondary light beam, a set of optical systems arranged so as to be able to cover an entire pixel belonging to one of the sets and at least part of the sub-pixels of at least one of the adjacent pixels belonging to the other set, the number of pixels being greater than twice the number of optical systems. At least one movement mechanism applies a relative movement between the set and the sets according to a predetermined sequence.

Optoelectronic device having optical systems that can be moved between different pixels, and control method

In an active pixel sensor comprising a photodiode Dp, a memory node MN and a readout node SN, the memory node being provided to contain the charge generated by the photodiode at the end of an integration period allowing an integration in global shutter mode and a correlated double sampling, it is envisaged to carry out, in each integration period, at least one transfer {circle around (2)} of charge from the photodiode to the memory node followed by clipping {circle around (3)} of the amount of charge contained in the memory node at an intermediate voltage tafter the start of the integration period but before a last transfer of charge {circle around (4)} to the memory node at the end of the integration period. The pixels are subsequently read out, row by row, by correlated double sampling CDS. The one or more intermediate transfers, with clipping, to the memory node during the integration period allow the dynamic range of the sensor to be extended to high levels of ambient light while retaining good sensitivity to low levels of ambient light.

Control method for an active pixel image sensor

In a sensor comprising active pixels including a photodiode PHD, a memory node MN and a read-out node SN, the memory node being provided to hold the charge generated by the photodiode at the end of an integration period enabling integration in global-shutter mode and a correlated double sampling read-out, provision is made for the charge-storage capacity of the memory node to be at least N times higher than the charge-storage capacity of the photodiode (N being an integer higher than or equal to 2) and provision is made to carry out, in each integration and read-out cycle, during the integration duration Tint(i), N transfers Tri, Tri, Triof charge from the photodiode to the memory node, the N transfers being equally distributed over the integration duration. The dynamic range of the sensor is improved under high light levels.

Method for controlling an active pixel image sensor

The invention relates to color-image sensors. To benefit both from a good luminance resolution and a color accuracy that is not excessively degraded by the sensitivity of silicon to near-infrared radiation, the invention proposes to produce a mosaic of pixels comprising colored pixels (R), (G), (B), coated with color filters, which are distributed in the matrix, with white pixels (T) not coated with color filters and which are distributed in the matrix. The colored pixels include photodiodes constructed differently from the photodiodes of the white pixels, the different construction being such that the photodiodes of the colored pixels have a lower sensitivity to infrared radiation than the photodiodes of the white pixels.

Colour image sensor with white pixels and colour pixels

The invention concerns active-pixel electronic image sensors. The pixel comprises a photodiode (PH) designed in a semiconductor active layer () and maintained at a nil reference potential, and above the active layer an anti-blooming gate (G) adjacent on one side to the photodiode and on another side to an evacuation drain (). The sensor comprises means for applying to the anti-blooming gate, during most of the duration of integration, a blocking potential creating beneath the gate a potential barrier of a first height, and, during a series of brief pulses over the duration of integration, an anti-blooming potential creating a potential barrier of a second height, lower than the first. The fact of only applying the anti-blooming voltage during the brief pulses reduces the dark noise induced by tunneling effect by the electric field between gate and photodiode.

Image sensor with anti-blooming gate

The invention relates to time delay integration (TDI) image sensors. The sensor includes means for detecting a shift of the sensor with respect to the image. The pixel matrix is divided in the column direction into at least a first and a second sub-matrix (Ma, Mb). On each side of each sub-matrix are arranged groups of additional columns (GRa, GRb, GRa, GRb). The shifts (Db&#x2212;Da, Db&#x2212;Da, etc.) in relative position of these groups between the first and the second sub-matrices are different from each other and make it possible to detect a relative shift of the sensor during travel. More precisely, the signals originating from groups of columns of same rank associated with the two sub-matrices are compared. The pair of groups that delivers the pair of signals that are closest to each other defines the probable shift of the sensor with respect to the image: this shift is equal to the relative position difference of these two groups.

Time delay integration image sensor with detection of travelling errors

The invention relates to time-delay and charge integration image sensors employing active CMOS technology pixels. The sensor comprises N rows of pixels and each pixel of generally square shaped comprises two (though possibly also three or four) photodiodes and charge storage nodes, having means for transferring charges from each photodiode to one or other of the storage nodes. Control of transfer from the photodiodes to one then the other of the storage nodes is carried out in such a way that one storage node receives in succession, during two successive phases of a periodic cycle, the charges from two photodiodes that have seen the same image portion during the two phases. The charges received by one of the storage nodes during the first phase is added to the charges received by the other storage node in the following phase.

Moving image sensor having multiphase digital summation and charge storage nodes separated from photodiodes by charge transfer gates

The invention relates to matrix image sensors organized into pixel rows and columns, and more specifically to image sensors produced with active pixels in MOS technology. The matrix is organized into groups of at least two pixels with means for grouping the charges engendered in the two pixels into one pixel, with the aim of improving sensitivity. Provision is made for at least one gate for temporarily storing charges, of dissymmetric form, arranged between the photodiode of the first pixel and the photodiode of the second pixel, and means for applying to the temporary storage gate a succession of potentials that allow prohibition first of all of the passage of charges between the first and second photodiodes during the charge integration period, then collection, under the gate, of the charges accumulated in the photodiodes, then discharge of these charges only into the second photodiode, on account of the dissymmetry of the gate. The charges grouped in this way in a single photodiode are read in the pixel.

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Voiron, France

Frédéric Mayer