International Business Machines Corporation

Frederic Holtzberg

Richard Joseph Gambino

William Alan Thompson

Ralph R Ruf

Ashok Frank Mayadas

Stephan Von Molnar

Benjamin Welber

Tunnel junctions are used to detect magnetic domains, such as bubble domains, using the change in Fermi level of one (or both) electrodes due to the magnetic field of the domain. The Fermi level shift causes the tunnel barrier height to change, leading to a change in tunneling conductance which is detectable as a current or voltage change. A simple tunnel junction in flux coupling proximity to the magnetic domains is suitable, but more sensitive detectors are made using Schottky barrier junctions, and magnetic semiconductors which exhibit conduction band splitting due to the stray field of the domains. In another embodiment, the magnetic sheet supporting the domains provides the tunnel barrier for sensing of the domains within it. Detection of submicron domains is easily achieved.

Detection of magnetic domains by tunnel junctions

There is disclosed herein a relatively low-cost, high density postable storage medium which comprises adjacent thin layers of two or more materials which react upon heating to form a reaction product with optical, magnetic or electrical properties different from the corresponding properties of the reactant materials. Thus, utilizing reactant layers such as aluminum and selenium, the heating results in a reaction product of Al.sub.2 Se.sub.3. The heating agent is notably a laser beam.

Information storage by laser beam initiated reactions

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Pound Ridge, NY, United States of America

Frederic Holtzberg