Ionics France

Agc Inc.

Agc Glass Europe

Quertech Ingenierie

Frederic Guernalec

Denis Busardo

Pierre Boulanger

Lionel Ventelon

Benjamine Navet

A method of treatment using a beam of singly- and multiply-charged gas ions produced by an electron cyclotron resonance (ECR) source of a glass material in which the ion acceleration voltage of between 5 kV and 1000 kV is chosen to create an implanted layer of a thickness equal to a multiple of 100 nm; and the ion dose per surface unit in a range of between 10ions/cmand 10ions/cmis chosen so as to create an atomic concentration of ions equal to 10% with a level of uncertainty of (+/&#x2212;)5%. Advantageously this makes it possible to obtain materials made from glass that are non-reflective in the visible range.

Process for treatment by a beam of mono- or multicharged ions of a gas to produce antireflective glass materials

A treatment method of a sapphire material, said method comprising bombardment of a surface of the sapphire material, said surface facing a medium different from the sapphire material, by a single- and/or multi-charged gas ion beam so as to produce an ion implanted layer in the sapphire material, wherein the ions are selected from ions of the elements from the list consisting of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), boron (B), carbon (C), nitrogen (N), oxygen (O), fluorine (F), silicon (Si), phosphorus (P) and sulphur (S). Use of said method to obtain a capacitive touch panel having a high transmission in the visible range.

Single- and/or multi-charged gas ion beam treatment method for producing an anti-glare sapphire material

A method of treating a powder (P) made from cerium oxide using an ion beam (F) in which: &#x2014;the powder is stirred once or a plurality of times; &#x2014;the ions of the ion beam are selected from the ions of the elements of the list consisting of helium (He), boron (B), carbon (C), nitrogen (N), oxygen (O), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe)&#x2014;the acceleration voltage of the ions of the beam is between 10 kV and 1000 kV; &#x2014;the treatment temperature of the powder (P) is less than or equal to Tf/3; &#x2014;the ion dose per mass unit of powder to be treated is chosen from a range of between 1016 ions/g and 1022 ions/cm2 so as to lower the reduction temperature of the powder made from cerium oxide (P).

Method of treating powder made from cerium oxide using an ion beam

The invention concerns a process for increasing the scratch resistance of a glass substrate by implantation of simple charge and multicharge ions, comprising maintaining the temperature of the area of the glass substrate being treated at a temperature that is less than or equal to the glass transition temperature of the glass substrate, selecting the ions to be implanted among the ions of Ar, He, and N, setting the acceleration voltage for the extraction of the ions at a value comprised between 5 kV and 200 kV and setting the ion dosage at a value comprised between 10ions/cmand 2.5&#xd7;10ions/cm.The invention further concerns glass substrates comprising an area treated by implantation of simple charge and multicharge ions according to this process and their use for reducing the probability of scratching on the glass substrate upon mechanical contact.

Ion implantation process and ion implanted glass substrates

A treatment method for modifying the reflected color of a sapphire material surface comprising bombardment by a single- and/or multi-charged gas ion beam so as to modify the reflected color of the treated sapphire material surface, wherein the ions are selected from ions of the elements from the list consisting of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), boron (B), carbon (C), nitrogen (N), oxygen (O), fluorine (F), silicon (Si), phosphorus (P) and sulphur (S).

Treatment method for modifying the reflected colour of a sapphire material surface

A method of treatment using a beam of singly- and multiply-charged gas ions produced by an electron cyclotron resonance (ECR) source of a glass material in which&#x2014;the ion acceleration voltage of between 5 kV and 1000 kV is chosen to create an implanted layer of a thickness equal to a multiple of 100 nm; &#x2014;the ion dose per surface unit in a range of between 1012 ions/cm2 and 1018 ions/cm2 is chosen so as to create an atomic concentration of ions equal to 10% with a level of uncertainty of (+/&#x2212;)5%. Advantageously this makes it possible to obtain materials made from glass that is non-reflective in the visible range.

Growing community of inventors

Liffre, France

Frederic Guernalec