International Business Machines Corporation

Frederic Beaulieu

Kevin Shawn Petrarca

Sylvain E Ouimet

Mark J Kuzawinski

Samuel McKnight

Adreanne Kelly

Jean-Guy Quintal

Stephane Mainville

Guy Robichaud

Wolfgang Sauter

Richard Paul Volant

Takashi Hisada

David Angell

Caitlin W Weinstein

Hiromitsu Miyai

Mukta G Farooq

William Joseph Murphy

Matthew J Farinelli

Gobinda Das

Steven J Duda

Caitlin Weinstein

Techniques for bond pad fabrication are provided. In one aspect, a method of forming a bond pad comprises the following steps. At least one alloying element is selectively introduced to at least a portion of at least one surface of the bond pad. The at least one alloying element is diffused into at least a portion of the bond pad through one or more thermal cycles. The at least one alloying element may be selectively introduced to the bond pad by depositing an alloying element layer comprising the at least one alloying element onto the bond pad and patterning and etching at least a portion of the layer.

Techniques for improving bond pad performance

Inner wire bond pads are formed within a peripheral region of a semiconductor chip and at least one bonding wire is attached to the inner wire bond pads. The semiconductor chip may be customized for a specific configuration of choice by wiring inner wire bond pads. Alternately, the bonding wires may be employed to reinforce a power network or a ground network. Further, the bonding wire may serve as a passive radio frequency (RF) component. In addition, the bonding wire may be used a heat conduction path to transfer heat from the semiconductor chip to the upper package housing.

Wire bonding personalization and discrete component attachment on wirebond pads

Disclosed is a reinforced bond pad structure having nonplanar dielectric structures and a metallic bond layer conformally formed over the nonplanar dielectric structures. The nonplanar dielectric structures are substantially reproduced in the metallic bond layer so as to form nonplanar metallic structures. Surrounding each of the nonplanar metallic structures is a ring of dielectric material which provides a hard stop during probing of the bond pad so as to limit the amount of bond pad that can be removed during probing.

Internally reinforced bond pads

A method for reducing the number of wire-bond loop heights which are required in comparison with a total quantity of power and signal rings employed in low profile wire-bond integrated circuit packages. There are also provided low profile wire-bond packages which are produced in accordance with the method pursuant to the invention.

Method to reduce number of wire-bond loop heights versus the total quantity of power and signal rings

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Granby, Canada

Frederic Beaulieu