Nxp B.v.

Nederlandse Organisatie Voor Toegepast-natuurwetenschappelijk Onderzoek Tno

Koninklijke Philips Corporation N.V.

U.S. Philips Corporation

Taiwan Semiconductor Manufacturing Comp. Ltd.

Ipdia

Tessera Advanced Technologies, Inc.

Lumileds Holding B.v.

Murata Integrated Passive Solutions

Invensas LLC

Freddy Roozeboom

Johan Hendrik Klootwijk

Derk Reefman

Willem Frederik Adrianus Besling

Paul Van Der Sluis

Adrianus Johannes Petrus Maria Vermeer

Mark Thomas Johnson

Herbert Lifka

Peter Alexander Duine

Jaap Ruigrok

Joop Van Deelen

Ruud Olieslagers

Eric Cornelis Egbertus Van Grunsven

Paulus Willibrordus George Poodt

Antonius Lucien Adrianus Maria Kemmeren

Jinesh Balakrishna Pillai Kochupurackal

Raymond Jacobus Wilhelmus Knaapen

Rene Johan Gerrit Elfrink

Antonius L A M Kemmeren

Ronald Dekker

Jozef Thomas Martinus Van Beek

Kars-Michiel Hubert Lenssen

Lukas Frederik Tiemeijer

Hendrik Johannes Bergveld

Reiner Maria Jungblut

Patrice Gamand

Martijn Goossens

Victor Zieren

Norbertus Benedictus Koster

Freek Egbert Van Straten

Jacques Cor Johan Van Der Donck

Erik Petrus Antonius Maria Bakkers

Friso Jedema

Diederik Jan Maas

Marcel Simor

Aarnoud Laurens Roest

Arnoldus Den Dekker

Friedrich J Den Broeder

Wouter Dekkers

Pablo Garcia Tello

Lionel Guiraud

René Wilhelmus Johannes Maria Van Den Boomen

Johannes Frederik Dijkhuis

Mathijs De Jongh

David D R Chevrie

Peter Lasinski

Arnold Broese Van Groenou

Yves Lodewijk Maria Creyghton

Adrianus Alphonsus Jozef Buijsman

Erik P A M Bakkers

Robert Adrianus Maria Wolters

Dennis Van Den Berg

Matijs C Van Den Boer

Cornelis Draijer

Peter H Notten

Leo-Franciscus M Van Oorschot

Francois Lecornec

Maria Mathea Antonetta Burghoorn

Franciscus Hubertus Marie Sanders

Martinus H Van Delden

Nynke Verhaegh

Nicolas Jonathan Pulsford

Gerardus Tarcisius Maria Hubert

Jin Liu

Gerardus Johan Jozef Winands

Franciscus W A Dirne

Ralph M Hanzen

Frederik Vanhelmont

Antonius E T Kuiper

Ahmed Fawzy

Johannes Fransiscus Cornelis Maria Verhoeven

Johannes F C M Verhoeven

Eric C E Van Grunsven

Yann Pierre Roger Lamy

Vahid Shabro

Petrus H L Notten

Maarten Dirk-Johan Nollen

Adriaan Marinus Lankhorst

A plasma source has an outer surface, interrupted by an aperture for delivering an atmospheric plasma from the outer surface. A transport mechanism transports a substrate in parallel with the outer surface, closely to the outer surface, so that gas from the atmospheric plasma may form a gas bearing between the outer surface the and the substrate. A first electrode of the plasma source has a first and second surface extending from an edge of the first electrode that runs along the aperture. The first surface defines the outer surface on a first side of the aperture. The distance between the first and second surface increasing with distance from the edge. A second electrode covered at least partly by a dielectric layer is provided with the dielectric layer facing the second surface of the first electrode, substantially in parallel with the second surface of the first electrode, leaving a plasma initiation space on said first side of the aperture, between the surface of the dielectric layer and the second surface of the first electrode. A gas inlet feeds into the plasma initiation space to provide gas flow from the gas inlet to the aperture through the plasma initiation space. Atmospheric plasma initiated in the plasma initiation space flows to the aperture, from which it leaves to react with the surface of the substrate.

Plasma source and surface treatment method

Method of performing atomic layer deposition. The method comprises supplying a precursor gas towards a substrate, using a deposition head including one or more gas supplies, including a precursor gas supply. The precursor gas reacts near a surface of the substrate for forming an atomic layer. The deposition head has an output face comprising the gas supplies, which at least partly faces the substrate surface during depositing the atomic layer. The output face has a substantially rounded shape defining a movement path of the substrate. The precursor-gas supply is moved relative to the substrate by rotating the deposition head while supplying the precursor gas, for depositing a stack of atomic layers while continuously moving in one direction. The surface of the substrate is kept contactless with the output face by means of a gas bearing.

Method and apparatus for depositing atomic layers on a substrate

Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum.

A biosensor device for detecting biological particles, the biosensor device comprising a substrate, a regular pattern of pores formed in the substrate, and a plurality of sensor active structures each of which being arranged on a surface of a corresponding one of the pores, wherein each of the plurality of sensor active structures is sensitive to specific biological particles and is adapted to modify electromagnetic radiation interaction properties in the event of the presence of the respective biological particles.

Biosensor device and method of manufacturing the same

The invention relates to an apparatus for reactive ion etching of a substrate, comprising: a plasma etch zone including an etch gas supply and arranged with a plasma generating structure for igniting a plasma and comprising an electrode structure arranged to accelerate the etch plasma toward a substrate portion to have ions impinge on the surface of the substrate; a passivation zone including a cavity provided with a passivation gas supply; said supply arranged for providing a passivation gas flow from the supply to the cavity; the cavity in use being bounded by the injector head and the substrate surface; and a gas purge structure comprising a gas exhaust arranged between said etch zone and passivation zone; the gas purge structure thus forming a spatial division of the etch and passivation zones.

Apparatus and method for reactive ion etching

Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum. The method further comprises switching between supplying the precursor gas from the precursor-gas supply towards the substrate over a first part of the rotation trajectory; and interrupting supplying the precursor gas from the precursor-gas supply over a second part of the rotation trajectory.

A semiconductor substrate comprises both vertical interconnects and vertical capacitors with a common dielectric layer. The substrate can be suitably combined with further devices to form an assembly. The substrate can be made in etching treatments including a first step on the one side, and then a second step on the other side of the substrate.

Electronic device, assembly and methods of manufacturing an electronic device including a vertical trench capacitor and a vertical interconnect

A battery comprises a carrier foil, with solid state battery elements spaced along the foil and mounted on opposite sides of the foil in pairs, with the battery elements of a pair mounted at the same position along the foil. The carrier foil is folded to define a meander pattern with battery element pairs that are adjacent each other along the foil arranged back to back.

Battery

A method of forming a dielectric layer on a further layer of a semiconductor device is disclosed. The method comprises depositing a dielectric precursor compound and a further precursor compound over the further layer, the dielectric precursor compound comprising a metal ion from the group consisting of Yttrium and the Lanthanide series elements, and the further precursor compound comprising a metal ion from the group consisting of group IV and group V metals; and chemically converting the dielectric precursor compound and the further precursor compound into a dielectric compound and a further compound respectively, the further compound self-assembling during said conversion into a plurality of nanocluster nuclei within the dielectric layer formed from the first dielectric precursor compound. The nanoclusters may be dielectric or metallic in nature. Consequently, a dielectric layer is formed that has excellent charge trapping capabilities.

Method of forming a nanocluster-comprising dielectric layer and device comprising such a layer

The electronic device comprises a network of at least one thin-film capacitor and at least one inductor on a first side of a substrate of a semiconductor material. The substrate has a resistivity sufficiently high to limit electrical losses of the inductor and being provided with an electrically insulating surface layer on its first side. A first and a second lateral pin diode are defined in the substrate, each of the pin diodes having a doped p-region, a doped n-region and an intermediate intrinsic region. The intrinsic region of the first pin diode is larger than that of the second pin diode.

Electronic device

The invention relates to an semi-conductor device comprising a first surface and neighboring first and second electric elements arranged on the first surface, in which each of the first and second elements extends from the first surface in a first direction, the first element having a cross section substantially perpendicular to the first direction and a sidewall surface extending at least partially in the first direction, wherein the sidewall surface comprises a first section and a second section adjoining the first section along a line extending substantially parallel to the first direction, wherein the first and second sections are placed at an angle with respect to each other for providing an inner corner wherein the sidewall surface at the inner corner is, at least partially, arranged at a constant distance R from a facing part of the second element for providing a mechanical reinforcement structure at the inner corner.

Robust high aspect ratio semiconductor device

An integration substrate for a system in package comprises a through-substrate via and a trench capacitor wherein with a trench filling that includes at least four electrically conductive capacitor-electrode layers in an alternating arrangement with dielectric layers. &#x2014;The capacitor-electrode layers are alternatingly connected to a respective one of two capacitor terminals provided on the first or second substrate side. The trench capacitor and the through-substrate via are formed in respective trench openings and via openings in the semiconductor substrate, which have an equal lateral extension exceeding 10 micrometer. This structure allows, among other advantages, a particularly cost-effective fabrication of the integration substrate because the via openings and the trench openings in the substrate can be fabricated simultaneously.

Integration substrate with a ultra-high-density capacitor and a through-substrate via

An electronic device is provided which comprises a DC-DC converter. The DC-DC converter comprises at least one solid-state rechargeable battery (B, B) for storing energy for the DC-DC conversion and an output capacitor (C).

Charge pump DC-DC converter comprising solid state batteries

Growing community of inventors

Waalre, Netherlands

Freddy Roozeboom