Nxp Usa, Inc.

Freescale Semiconductor,inc.

Fred T Brauchler

Randall C Gray

Burton Jesse Carpenter

Ibrahim S Kandah

John M Pigott

William Ernest Edwards

Mike Robert Garrard

Kim Roger Gauen

John Matthew Hall

Leo M Higgins, Iii

David D Putti

Jerry Rudiak

Steven R Everson

Jinzhong Yao

Darrel R Frear

Qiang Li

Norman Lee Owens

Xingshou Pang

Mariano Layson Ching, Jr

Carl Emil D'Acosta

Vasily Alekseyevich Syngaevskiy

Vivek Gupta

Jinmei Liu

Jianhong Wang

Yadong Wei

A semiconductor device package having galvanic isolation is provided. The semiconductor device includes a package leadframe having a first die pad and a second die pad separated from the first die pad. A first semiconductor die is attached to the first die pad of the package leadframe. A second semiconductor die is attached to the second die pad of the package leadframe. A communication device is attached over the second semiconductor die. The communication device is configured to communicate wirelessly with the second semiconductor die.

Semiconductor device having galvanic isolation and method therefor

A power module may include multiple transistors each respectively having a first current-carrying terminal coupled to a voltage supply, a second current-carrying terminal coupled to an output node, and a control terminal, multiple output driver stages each coupled to the control terminal of a respectively different transistor of the transistors, and a driver module. The driver module may include multiple pre-drivers each coupled to a respectively different output driver stage of the output driver stages and a control module having an input and having multiple outputs coupled to the pre-drivers. The control module may be configured to receive a control signal at the input and to selectively control the pre-drivers to drive at least a subset of the plurality of transistors via the output driver stages based on the control signal.

Power module with segmented output driver

A semiconductor device package having galvanic isolation is provided. The semiconductor device includes a package substrate having a first inductive coil formed from a first conductive layer and a second inductive coil formed from a second conductive layer. The first conductive layer and the second conductive layer are separated by a non-conductive material. A first semiconductor die is attached to a first major side of the package substrate. The first semiconductor die is conductively interconnected to the first inductive coil. A second semiconductor die is attached to the first major side of the package substrate. A first wireless communication link between the first semiconductor die and the second semiconductor die is formed by way of the first and second inductive coils.

Semiconductor device package having galvanic isolation and method therefor

A semiconductor device package having galvanic isolation is provided. The semiconductor device package includes a package substrate having a first inductive coil. A first semiconductor die is attached to a first major surface of the package substrate. The first semiconductor die includes a second inductive coil substantially aligned with the first inductive coil. A second semiconductor die is attached to the first major surface of the package substrate. A wireless communication link between the first semiconductor die and the second semiconductor die is formed by way of the first and second inductive coils.

A packaged integrated circuit (IC) device includes a first IC die, a first layer of adhesive on a first major surface of the first IC die, and an isolation layer over the first layer of adhesive. The isolation layer has a first major surface and a second major surface, and the second major surface of the isolation layer is between the first layer of adhesive and the first major surface. The packaged IC device also includes a first inductor coil on the first major surface of the isolation layer, a second layer of adhesive on the isolation layer, and a second IC die on the second layer of adhesive.

Packaged integrated circuit having stacked die and method for making

An embodiment of a transformer-based system or galvanic isolation device includes a first coil, a second coil aligned with the first coil across a gap, and a first capacitor coupled between the first coil and a first voltage reference. A first electrode of the first capacitor may be formed from a conductive electrode structure that is electrically isolated from the first coil, and a second electrode of the first capacitor may be formed from at least a portion of the first coil. The system or device also may include a second capacitor coupled between the second coil and a second voltage reference. The first and second coils may form portions of first and second IC die, respectively, and the system or device may also include one or more dielectric components within the gap between the IC die, where the dielectric component(s) are positioned directly between the first and second coils.

Systems and devices with common mode noise suppression structures and methods

A control system () and method () are provided where a first voltage domain circuit () and a power switch () operate in a first voltage domain and where a second voltage domain circuit () operates in a second voltage domain, where the second voltage domain circuit includes a gate driver circuit () for providing a control terminal driving signal (PWM) to drive the power switch, and also includes a watchdog communication circuit () for scheduling watchdog communications between the first and second voltage domain circuits to be temporally separated from noise-inducing signal transitions in the control terminal driving signal.

Transmitting watchdog and precision measurements across a galvanic isolation barrier in the presence of large periodic noise pulses

A packaged integrated circuit (IC) device includes a first IC die with a first inductor, a first layer of adhesive on a first major surface of the first IC die, an isolation layer over the first layer of adhesive, a second layer of adhesive on the isolation layer, a second IC die on the second layer of adhesive, and a second inductor in the second IC die aligned to communicate with the first inductor. The isolation layer extends a prespecified distance beyond a first edge of the second IC die.

Packaged integrated circuit having stacked die and method for therefor

In one embodiment, a control system includes a first voltage domain circuit. The first voltage domain circuit includes circuitry for operating in a first voltage domain. The control system includes a second voltage domain circuit. The second voltage domain circuit includes circuitry for operating in a second voltage domain. The second voltage domain circuit includes a driver circuit. The driver circuit for providing a control terminal driving signal to make conductive a power switch. The second voltage domain circuit includes a replication circuit, the replication circuit having an output to provide a replicated signal of the control terminal driving signal. The control system includes a galvanic isolation barrier signal path between the first voltage domain circuit and the second voltage domain circuit. The replicated signal is provided by the second voltage domain circuit to the first voltage domain circuit via the galvanic isolation barrier signal path.

Replication of a drive signal across a galvanic isolation barrier

A segmented driver including at least one drive pin and a sense pin, a driver circuit, a comparator, and a controller. The driver circuit activates a selected drive level between the drive pins and a reference node. The comparator compares a voltage of the sense pin with a threshold voltage and provides a threshold indication when the voltage of the sense pin reaches the threshold voltage. The controller commands the driver circuit to activate a first drive level in response to an off indication, and commands the driver circuit to switch to a second, lower drive level in response to the threshold indication. The driver circuit may be implemented using low resistive current devices. Multiple drive pins may be included, each for selectively activating a corresponding drive path to adjust drive level. The threshold voltage may be set using a current source and resistor, and may be adjusted for temperature.

Segmented driver for a transistor device

Embodiments of inductive communication devices include first and second galvanically isolated IC die and a dielectric structure. Each IC die has a coil proximate to a first surface of the IC die. The IC die are arranged so that the first surfaces of the IC die face each other, and the first coil and the second coil are aligned across a gap between the first and second IC die. The dielectric structure is positioned within the gap directly between the first and second coils, and a plurality of conductive structures are positioned in or on the dielectric structure and electrically coupled with the second IC die. The conductive structures include portions configured to function as bond pads, and the bond pads may be coupled to package leads using wirebonds. During operation, signals are conveyed between the IC die through inductive coupling between the coils.

Die-to-die inductive communication devices and methods

Embodiments of inductive communication devices include first and second IC die and an inductive coupling substrate. The first IC die has a first coil. The inductive coupling substrate has a second coil and a first signal communication interface (e.g., a third coil or a contact). The second IC die has a second signal communication interface (e.g., a fourth coil or a contact). The first IC die and the inductive coupling substrate are arranged so that the first and second coils are aligned across a gap between the first IC die and the inductive coupling substrate. A dielectric component is positioned within the gap between the first and second coils to galvanically isolate the first IC die and the inductive coupling substrate. During operation, signals are conveyed between the first and second IC die through inductive coupling between the coils and communication through the signal communication interfaces.

Methods of manufacturing and operating die-to-die inductive communication devices

An interface for processing a variable reluctance sensor signal provided by a variable reluctance sensor including an integrator, an arming comparator and a detect circuit. The integrator includes an input for receiving the variable reluctance sensor signal and an output providing an integrated signal indicative of total flux change of the variable reluctance sensor. The arming comparator compares the integrated signal with a predetermined arming threshold and provides an armed signal indicative thereof. The detect circuit provides a reset signal after the armed signal is provided to reset the integrator. A corresponding method of processing the variable reluctance sensor signal is also described.

Variable reluctance sensor interface with integration based arming threshold

An embodiment of a packaged device includes first and second package leads, a first integrated circuit (IC) die, and a sub-assembly that includes a second IC die coupled to a substrate. The first IC die has a first coil, and the second IC die has a second coil. The first and second IC die are arranged within the device so that the first and second coils are aligned with each other across a gap between the first and second IC die, and the first and second IC die are galvanically isolated from each other. The first IC die is electrically coupled to the first package lead (e.g., with a wirebond), and a substrate bond pad is electrically coupled to the second package lead (e.g., with a wirebond). The sub-assembly also may include encapsulation at least over a wirebond that electrically couples the second IC die to the substrate.

A circuit performs a method for controlling turn-off of a semiconductor switching element. The method includes determining at least one operating parameter for the semiconductor switching element during an operating cycle and determining a gate discharge current based on the at least one operating parameter. The method further includes supplying the gate discharge current to a gate of the semiconductor switching element during a subsequent operating cycle to turn off the semiconductor switching element.

Growing community of inventors

Canton, MI, United States of America

Fred T Brauchler