Carl Zeiss Smt Gmbh

Fred Roozeboom

Dirk Heinrich Ehm

Andrea Illiberi

Moritz Becker

Edwin Te Sligte

Yves Lodewijk Maria Creijghton

A method for at least partially removing a contamination layer () from an optical surface () of an optical element () that reflects EUV radiation includes: performing an atomic layer etching process for at least partially removing the contamination layer () from the optical surface (), which, in turn, includes: exposing the contamination layer () to a surface-modifying reactant () in a surface modification step, and exposing the contamination layer () to a material-detaching reactant () in a material detachment step. The optical element () is typically taken, before the atomic layer etching process is performed, from an optical arrangement, in particular from an EUV lithography system, in which the optical surface () of the optical element () is exposed to EUV radiation (), during which the contamination layer () is formed.

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Eindhoven, Netherlands

Fred Roozeboom