Toshiba Memory Corporation

Fred Au

Dishi Lai

Raja V S Halaharivi

Tony Chheang

A data storage device includes a non-volatile semiconductor storage device and a controller that is configured to perform interleaving of small reads with large reads and small writes with large writes. In the example of reads, the controller receives a sequence of read commands including a first read command having a read size larger than a read threshold size and a second read command having a read size smaller than the read threshold size, and issue first and second read requests in succession to read data of a predetermined size less than the read threshold size, from the non-volatile semiconductor storage device. The interleaving is achieved by issuing the first read request to execute the first read command and the second read request to execute the second read command. As a result of this interleaving, the second read command will have a chance to complete earlier than the first read command even though it was received by the controller later in time.

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Fremont, CA, United States of America

Fred Au