Soitec

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

François-Xavier Darras

Bruno Ghyselen

A method for producing a stacked structure comprises: a) providing a carrier substrate and an initial substrate, each having a front face and a back face, b) forming a buried weakened plane in the carrier substrate or in the initial substrate, by implanting light ions through the front face of either of the substrates, c) joining the carrier substrate and the initial substrate via their respective front faces, d) thinning the initial substrate via its back face to form a donor substrate e) providing a receiver substrate having a front face and a back face, f) joining the donor substrate and the receiver substrate via their respective front faces, and g) separating along the buried weakened plane, so as to form the stacked structure comprising the receiver substrate and a surface film including all or part of a donor layer originating from the initial substrate.

Method for producing a stacked structure

A method for producing a device comprising a membrane of piezoelectric nature above at least one cavity comprises:

Membrane transfer method

A detachable structure comprises at least two interfaces including an assembly interface and a favored-detachment interface, a receiver substrate, and a donor substrate comprising a working layer that is to be transferred, arranged on an initial substrate. The favored-detachment interface is situated between the working layer and the initial substrate, and the assembly interface is situated between the working layer and the receiver substrate. The assembly interface has an assembly-interruption zone comprising at least one cavity present in the receiver substrate or in the working layer, and the assembly-interruption zone is located in a peripheral region of the detachable structure.

Growing community of inventors

Apprieu, France

François-Xavier Darras