Abb Schweiz Ag

Sensirion Ag

Abb Technology Ag

Abb Power Grids Switzerland Ag

Franziska Brem

Werner Hunziker

Felix Mayer

Francisco Canales

Markus Graf

Uwe Drofenik

Chunlei Liu

Munaf Rahimo

Peter Karl Steimer

Didier Cottet

Slavo Kicin

Jürgen Schuderer

Juergen Schuderer

Franc Dugal

René Hummel

A power semiconductor device includes a base plate; a Si chip including a Si substrate, the Si chip attached to the base plate; a first metal preform pressed with a first press pin against the Si chip; a wide bandgap material chip comprising a wide bandgap substrate and a semiconductor switch provided in the wide bandgap substrate, the wide bandgap material chip attached to the base plate; and a second metal preform pressed with a second press pin against the wide bandgap material chip; the Si chip and the wide bandgap material chip are connected in parallel via the base plate and via the first press pin and the second press pin; the first metal preform is adapted for forming a conducting path through the Si chip, when heated by an overcurrent; and the second metal preform is adapted for forming an temporary conducting path through the wide bandgap material chip or an open circuit, when heated by an overcurrent.

Power semiconductor module with short circuit failure mode

A power module included a plurality of normally-on semiconductor switches based on a wide bandgap substrate, the normally-on semiconductor switches connected in parallel; and a balancing unit including a capacitor and a balancing semiconductor switch connected in series, which are connected in parallel to the normally-on semiconductor switches.

Power module based on normally-on semiconductor switches

A converter cell for a modular converter includes at least one power semiconductor switch for switching a cell current through the converter cell; a cell capacitor interconnected with the at least one power semiconductor switch, such that the cell capacitor is loadable by the cell current; a controller for switching the at least one power semiconductor switch, wherein the controller is supplyable with auxiliary power from the cell capacitor; and a photovoltaic cell for providing initial and/or further auxiliary power to the controller.

Converter cell with integrated photovoltaic cell

The sensor assembly comprises a substrate (), such as a flexible printed circuit board, and a sensor chip () flip-chip mounted to the substrate (), with a first side () of the sensor chip () facing the substrate (). A sensing area () and contact pads () are integrated on the first side () of the sensor chip () and located in a chamber () between the substrate () and the sensor chip (). Chamber () is bordered along at least two sides by a dam (). Underfill () and/or solder flux is arranged between the sensor chip () and the substrate (), and the dam () prevents the underfill from entering the chamber (). An opening () extends from the chamber to the environment and is located between the substrate () and the sensor chip () or extends through the sensor chip ().

Sensor mounted in flip-chip technology on a substrate

The sensor assembly comprises a substrate (), such as a flexible printed circuit board, and a sensor chip () flip-chip mounted to the substrate (), with a first side () of the sensor chip () facing the substrate (). A sensing area () and contact pads () are integrated on the first side () of the sensor chip (). Underfill () and/or solder flux is arranged between the sensor chip () and the substrate (). The sensor chip () extends over an edge () of the substrate (), with the edge () of the substrate () extending between the contact pads () and the sensing area () over the whole sensor chip (). A dam () can be provided along the edge () of the substrate () for even better separation of the underfill () and the sensing area (). This de sign allows for a simple alignment of the sensor chip on the substrate () and prevents underfill () from covering the sensing area ().

Sensor mounted in flip-chip technology at a substrate edge

A method for packaging a sensor device having a sensitive structure integrated on a semiconductor chip is provided. When molding the device package, an inward extending section of the mold maintains an access opening to the sensor. A buffer layer is arranged on the chip between the inward extending section and the sensitive structure. The buffer layer protects the sensitive structure from damage by the inward extending section and acts as a seal while casting the housing. The buffer layer also covers at least part of the semiconductor electronic components of the circuitry integrated onto the chip. By covering these components, mechanical stress, as it is e.g. caused by different thermal expansion coefficients of the packaging and the chip, can be reduced.

Method for manufacturing a sensor device with a stress relief layer

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Küsnacht, Switzerland

Franziska Brem