Infineon Technologies Ag

Siemens Aktiengesellschaft

Franz Wachter

Andreas Kalt

Hubert Rothleitner

Martin Pernull

Bernhard Wotruba

Igor Ullmann

Gerhard Pichler

Johann Massoner

Devices for sampling a plurality of input signals are provided, wherein a sampling device is controlled to sample the input signals in a random order with additional delays. Other embodiments relate to voltage monitoring systems and corresponding methods.

Devices and methods for multi-channel sampling

High-voltage level-shifter architectures that provide galvanic coupling between low/high-voltage domains while simultaneously enabling high speed operation, low static current consumption and high reliability under a myriad of environmental circumstances including electromagnetic interference as well as process, voltage and temperature variations.

High-voltage level-shifter circuitry

A component arrangement having an evaluation circuit for detecting wear on connections is disclosed. The component arrangement has the following features:

Component arrangement having an evaluation circuit for detecting wear on connections

A driver circuit having series-connected high-side and low-side MOS switches with MOS transistors for driving a load, a temperature-limiting circuit and a current-limiting circuit, which is assigned to one of the two MOS transistors. In order to balance power losses between the high-side and low-side MOS switches, provision is made for the gate of the MOS transistor without the current-limiting circuit to be connected to ground via a voltage generator, whose voltage corresponds to a maximum drive voltage for this MOS transistor.

Balanced loss driver circuit including high-side/low-side MOS switches

The circuit configuration for sensing when a critical temperature of a component has been exceeded makes use of at least one sense transistor which has a temperature-dependent current/voltage characteristic and which is thermally connected to the component. A current source is connected in series with the sense transistor. A circuit device for compensating for parasitic leakage currents at the sense transistor is provided. The circuit device has a measurement transistor and two current mirror circuits. By compensating for leakage currents, the proper operation of the temperature sensor is guaranteed over the entire temperature range and the destruction of the component is prevented.

Circuit configuration for sensing when a critical temperature of a

A reference voltage circuit has a bipolar transistor circuit supplying a reference voltage corresponding to a summation voltage formed from a forward voltage of a pn junction through which current flows, and a difference voltage between two forward voltages of pn junctions which are operated with different current densities. The reference voltage circuit includes a calibration device that can be used to change collector currents of the bipolar transistor circuit. This is achieved, in particular, by corrupting the mirroring ratio of a current mirror circuit provided for the bipolar transistor circuit.

Temperature stabilized reference voltage circuit that can change the

A comparator circuit with low current consumption for driving a sawtooth generator includes two differential amplifiers connected back to back, which control the bias current of an operational amplifier through a current measuring device and a means for impressing bias current. During normal operation, that is to say outside a switch-over point of the operational amplifier, the means for impressing bias current is supplied by a comparatively small standby current. Near the switch-over point of a sawtooth signal, the bias current of the operational amplifier is increased. Since the bias current source supplies a current pulse only at the switch-over point of the sawtooth signal, but remains switched off for the remainder of the time, the comparator circuit current consumption is minimized.

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A-Sattendorf, Austria

Franz Wachter