Infineon Technologies Ag

Franz Ungar

Gunther Lehmann

Christian Cornelius Russ

Armin Fischer

Vianney Antoine Choserot

An electrical device with a fin structure, a first section of the fin structure having a first width and a first height, a second section of the fin structure having a second width and a second height, wherein the first width is smaller than the second width and the first height is lower than the second height.

Electrical device and fabrication method

Implementations are presented herein that relate to a fuse device, an integrated circuit including a fuse device, a method of implementing a fuse device and a method of programming a fuse device.

Fuse device

A set of integrated capacitor arrangements is presented, each of which has a circuitry-effective main capacitor and a connectable correction capacitor. Each capacitor arrangement has an electrically conductive antifuse connection and antifuse interruption between the correction capacitor and the main capacitor, which are produced after the main capacitor has been formed. The connection and interruption enable the capacitance of the capacitor arrangement to be corrected.

Set of integrated capacitor arrangements, especially integrated grid capacitors

The present disclosure is directed to a semiconductor chip having protection against focused ion beam (FIB) attack. The semiconductor chip includes a conductor structure connected to a dielectric material, which has the property of giving rise, when ions are introduced, to an electrical conductivity which is sufficient for circuit-related connection of the conductors. When such a dielectric material is irradiated with ions, its electrical conductivity increases so that the electronic circuit integrated in the chip registers the electrical connection generated in this way between the conductors adjoining the dielectric material. Organic materials having a &#x3c0;-system are suitable for use as the dielectric material.

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Munich, Germany

Franz Ungar